SFT2010 thru SFT2014 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 200 AMP 100 – 140 Volt High Energy NPN Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT __ __ __ __ │ │ │ └ Screening 2/ __ = No Screening │ │ │ TX = TX Level │ │ │ TXV = TXV Level │ │ │ S = S Level │ │ └ Lead Bend 3/ 4/ __ = Straight Leads │ │ │ └ Package 3/ /3 = TO-3 0.060” pin └ Voltage/Family 2010 = 100V 2012 = 120V 2014 = 140V • • • • • • • • Features: BVCBO = 250 V MIN 600 Watts Power Dissipation Excellent SOA Curve Es/b of 800mJ Gain of over 5 at 200A High Reliability Construction Planar Chip Construction with Low Leakage and Very Fast Switching TX, TXV, S-Level Screening Available2/ Consult Factory Maximum Ratings Symbol Value Units VCEO 100 120 140 Volts Collector – Base Voltage VCBO 250 Volts Emitter – Base Voltage VEBO 8 Volts Collector Current IC 200 Amps Base Current IB 75 Amps PD 600 4 Watts W/ ºC TJ & TSTG -65 to +200 ºC R0JC 0.25 ºC/W Collector – Emitter Voltage Total Device Dissipation SFT2010 SFT2012 SFT2014 TC=50ºC Derate above 50ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: TO-3 *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only. 5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0108A DOC SFT2010 thru SFT2014 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Min Max Units (IC = 200 mA) SFT2010 SFT2012 SFT2014 BVCEO 100 120 140 –– Volts Collector – Base Breakdown Voltage * (IC = 100μA) BVCBO 250 –– Volts Emitter – Base Breakdown Voltage * (IE = 100μA) BVEBO 8 –– Volts (VCB = 250 V) ICBO –– 10 μA (VEB = 7 V) IEBO –– 10 μA IC = 10 A, VCE = 2 V IC = 100 A, VCE = 5 V IC = 200 A, VCE = 5 V hFE 40 30 5 –– –– –– Collector-Emitter Saturation Voltage * (IC = 120 A, IB = 12 A) (IC = 200 A, IB = 30 A) VCE (SAT) –– –– 2.0 3.0 Volts Base-Emitter Saturation Voltage * (IC = 120 A, IB = 12 A) VBE (SAT) –– 2.2 Volts (IC = 1.0 A, VCE = 10 V, f = 10MHz) fT 30 –– Mhz Cob –– 1200 pF Collector – Emitter Breakdown Voltage * Collector Cutoff Current Emitter Cutoff Current DC Current Gain * Current – Gain – Bandwidth Product Output Capacitance VCB = 10 V, IE = 0, f = 1.0MHz RB SOA IB = 1 A, RB1 = RB2 = 20 ohms VBE(off) = 2.0 V, L = 1.0 mH Es/b 800 –– mJ FB SOA VCE= 20 V, IC= 30 A VCE= 100 V, IC= 0.75 A Is/b 1 1 –– –– sec t(on) –– 800 ns ts –– 1500 ns tf –– 400 ns On Time Storage Time (VCC = 60 V, IC = 10 A, IB1 = IB2 = 1.0 A) Fall Time 1 2x Ø.165 .151 .135 MAX .675 .655 .525 MAX 2x R.188 MAX SEATING PLANE NOTES: 2x .063 .057 1 2 Ø.875 MAX .440 .420 .450 .250 2x .225 .205 TO-3 (/3) SFT2010/3 SFT2012/3 SFT2014/3 THIS OUTLINE DOES NOT MEET THE MINIMUM CRITERIA ESTABLISHED BY JS-10 FOR REGISTRATION. 1 1.197 1.177 2x .312 MIN Package THIS DIMENSION SHALL BE MEASURED AT POINTS .050 - .055" BELOW THE SEATING PLANE. WHEN GAGE IS NOT USED, MEASUREMENT WILL BE MADE AT SEATING PLANE. Available Part Numbers: PIN ASSIGNMENT (Standard) Collector Emitter Base Case NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Pin 2 Pin 1 DATA SHEET #: TR0108A DOC