SFT3904A2 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 200 mA 40 Volts Dual NPN Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT3904A2 __ __ │ └ Scre ening 2/ __ = Commercial │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package GW = Gullwing Maximum Ratings Features: • • • • • • High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 600 mW / device Replacement for 2N3904AU TX, TXV, S-Level screening available PNP complimentary parts available (SFT3906A2) Symbol Value Units Collector – Emitter Voltage VCEO 40 Volts Collector – Base Voltage VCBO 60 Volts Emitter – Base Voltage VEBO 6 Volts Continues Collector Current IC 200 mAmps Power Dissipation @ TC = 25ºC PD 600 mW Top & Tstg -65 to +200 ºC RθJC 0.29 ºC/mW Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0034 B Doc SFT3904A2 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Symbol Min Max Units IC = 1 mA BVCEO 40 –– Volts Collector – Base Breakdown Voltage IC = 10 µA BVCBO 60 –– Volts Emitter – Base Breakdown Voltage IC = 10 µA BVEBO 6 –– Volts Collector – Emitter Sustaining Voltage Collector Cutoff Current Vce = 30 V, Vbe = - 3.0 V ICEX –– 50 nA Collector Cutoff Current Vcb = 30 V ICBO –– 50 nA Emitter Cutoff Current Veb = 3.0 V IEBO –– 50 nA HFE 40 70 100 60 30 –– –– 300 –– –– IC = 10mA, IB = 1.0mA VCE(Sat) IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA VBE(Sat) IC = 50mA, IB = 5.0mA –– –– 0.65 –– 0.2 0.3 0.85 0.95 VCE = 20V, IC = 20mA fT 300 –– MHz Output Capacitance VCE = 10V, f = 1MHz cob –– 4.0 pF Input Capacitance VCE = 0.5V, f = 1MHz cib –– 8.0 pF td tr ts tf –– –– –– –– 35 35 200 50 n sec VCE = 10V, IC = 1.0 mA hfe 100 400 Ic = 100 uA, Vce = 5 V, Rs = 1.0 kΩ, f = 1 kHz NF –– 5.0 DC Forward Current Transfer Ratio * VCE = 1.0V, IC = 0.1 mA VCE = 1.0V, IC = 1.0 mA VCE = 1.0V, IC = 10 mA VCE = 1.0V, IC = 50 mA VCE = 1.0V, IC = 100 mA Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Frequency Transition Turn-on Delay Time Rise Time Switch Times Storage Time Fall Time Small Signal Current Gain Vcc=3V, IC = 10 mA IB1 = 1mA, IB2=-1mA Vbe(off) = 0.5 V (f = 1 kHz ) Noise Figure NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. Available Part Numbers: SFT3904A2GW Package GW Volts Volts db 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Pin 1 Collector1 PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Base1 Base2 Emitter2 Emitter1 Collector2