SFT3906A2 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 200 mA 40 Volts Dual PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT3906A2 __ __ │ └ Screening 2/ __ = Commercial │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package: GW = Gullwing Maximum Ratings Features: • • • • • • High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 600 mW / device Replacement for 2N3906AU TX, TXV, S-Level screening available NPN complimentary parts available (SFT3904A2) Symbol Value Units Collector – Emitter Voltage VCEO 40 Volts Collector – Base Voltage VCBO 40 Volts Emitter – Base Voltage VEBO 5 Volts Continues Collector Current IC 200 mAmps Power Dissipation @ TC = 25ºC PD 600 mW Top & Tstg -65 to +200 ºC RθJC 0.29 ºC/mW Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0038 B Doc SFT3906A2 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Symbol Min Max Units IC = 1 mA BVCEO -40 –– Volts Collector – Base Breakdown Voltage IC = 10 µA BVCBO -40 –– Volts Emitter – Base Breakdown Voltage IC = 10 µA BVEBO -5 –– Volts Collector – Emitter Sustaining Voltage Collector Cutoff Current Vce = -30 V, Vbe = 3.0 V ICEX –– 50 nA Collector Cutoff Current Vcb = -30 V ICBO –– 50 nA Emitter Cutoff Current Veb = -3.0 V IEBO –– 50 nA HFE 60 80 100 60 30 –– –– 300 –– –– –– –– -0.65 –– -0.25 -0.40 -0.85 -0.95 DC Forward Current Transfer Ratio * VCE = -1.0V, IC = 0.1 mA VCE = -1.0V, IC = 1.0 mA VCE = -1.0V, IC = 10 mA VCE = -1.0V, IC = 50 mA VCE = -1.0V, IC = 100 mA Collector – Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA VCE(Sat) IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA VBE(Sat) IC = 50mA, IB = 5.0mA Base – Emitter Saturation Voltage * Frequency Transition Volts Volts VCE = -20V, IC = 20mA fT 250 –– MHz Output Capacitance VCE = -10V, f = 1MHz cob –– 4.5 pF Input Capacitance VCE = -0.5V, f = 1MHz cib –– 10 pF td tr ts tf –– –– –– –– 35 35 225 75 n sec VCE = -10V, IC = 1.0 mA hfe 100 400 Ic = 100 uA, Vce = -5 V, Rs = 1.0 kΩ, f = 1 kHz NF –– 4.0 Turn-on Delay Time Rise Time Switch Times Storage Time Fall Time Small Signal Current Gain Vcc=-3V, IC = 10 mA IB1 = 1mA, IB2=-1mA Vbe(off) = 0.5 V (f = 1 kHz ) Noise Figure NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. Available Part Numbers: SFT3906A2GW Package GW db 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Pin 1 Collector1 PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Base1 Base2 Emitter2 Emitter1 Collector2