Inchange Semiconductor Product Specification 2N6270 2N6271 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Wide safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6270 VCBO Collector-base voltage 80 Open base 2N6271 VEBO V 120 2N6270 Collector-emitter voltage Emitter-base voltage UNIT 100 Open emitter 2N6271 VCEO VALUE V 100 Open collector 7 V 30 A 150 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6270 2N6271 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6270 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 80 IC=0.1A ;IB=0 2N6271 V 100 VCEsat Collector-emitter saturation voltage IC=7.5A ;IB=0.75A 1.0 V VBEsat Base-emitter saturation voltage IC=7.5A ;IB=0.75A 1.3 V ICEO Collector cut-off current VCE=1/2RatedVCE; IB=0 5.0 mA ICEV Collector cut-off current VCE=RatedVCE; VBE(off)=1.5V 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=15A ; VCE=4V Trainsistion frequency IC=1A ; VCE=10V fT 2 20 100 75 MHz Inchange Semiconductor Product Specification 2N6270 2N6271 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3