SavantIC Semiconductor Product Specification 2N6229 2N6230 2N6231 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N6229 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6230 Open emitter -120 2N6231 -140 2N6229 -100 2N6230 Emitter-base voltage UNIT -100 Open base 2N6231 VEBO VALUE -120 V V -140 Open collector -7 V -10 A 150 W IC Collector current PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification 2N6229 2N6230 2N6231 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6229 VCEO(SUS) Collector-emitter sustaining voltage 2N6230 TYP. MAX UNIT -100 IC=-0.2A ;IB=0 2N6231 VCEsat MIN V -120 -140 Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-2V -2.0 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA 2N6229 hFE DC current gain 2N6230 IC=-5A ; VCE=-2V 2N6231 fT Transition frequency IC=-0.5A ; VCE=-4V 2 25 100 20 80 15 60 1 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3