SAVANTIC MJ15001

SavantIC Semiconductor
Product Specification
MJ15001
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type MJ15002
·Wide area of safe operation
APPLICATIONS
·For high power audio,disk head positioners
and other linear applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
IB
Base current
5
A
IE
Emitter current
-20
A
PD
Total power dissipation
200
W
Ti
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
UNIT
0.875
/W
SavantIC Semiconductor
Product Specification
MJ15001
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.0
V
VBE
Base-emitter on voltage
IC=4A ; VCE=2V
2.0
V
ICEO
Collector cut-off current
VCE=140V; IB=0
0.25
mA
ICEX
Collector cut-off current
VCE=140V; VBE(off)=1.5V
TC=150
0.1
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=4A ; VCE=2V
25
VCE=40Vdc,t=1s, Nonrepetitive
5
Is/b
Second breakdown collector current
With base forward biased
140
UNIT
V
150
A
VCE=100Vdc,t=1s, Nonrepetitive
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
fT
Transition frequency
IC=0.5A ; VCE=10V;f=0.5MHz
2
0.5
1000
2
pF
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
MJ15001