STS2305A Green Product S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 70 @ VGS=-4.5V -20V Suface Mount Package. -3.3A 100 @ VGS=-2.5V D S OT 23-3L D G S G S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed TC=25°C TC=70°C a b a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TC=25°C TC=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Limit -20 ±10 -3.3 Units V V A -2.6 A -12.5 A 1.25 W 0.8 W -55 to 150 °C 100 °C/W Jun,02,2010 1 www.samhop.com.tw STS2305A Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -20 Typ Max Units -1 ±100 uA nA -0.8 55 -1.5 70 V m ohm VGS=-2.5V , ID=-2.8A 80 100 m ohm VDS=-5V , ID=-3.3A 11 S VDS=-10V,VGS=0V f=1.0MHz 380 196 175 pF pF pF 28 98 ns ns ns ns V VDS=-16V , VGS=0V VGS= ±10V , VDS=0V VDS=VGS , ID=-250uA VGS=-4.5V , ID=-3.3A -0.5 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge c VDD=-10V ID=-1A VGS=-4.5V RGEN= 6 ohm VDS=-10V,ID=-3.3A,VGS=-4.5V VDS=-10V,ID=-3.3A, VGS=-4.5V 157 132 7 0.6 Diode Forward Voltage b VGS=0V,IS= -1A nC nC 3.5 DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD nC -0.8 -1 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Jun,02,2010 2 www.samhop.com.tw STS2305A Ver 1.1 10 10 Tj=125 C -I D, Drain Current(A) -ID, Drain Current(A) VGS=-4.5V 8 VGS=-3V VGS=-2.5V 6 VGS=-2V 4 2 VGS=-1.5V 8 -55 C 4 2 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 -VDS, Drain-to-Source Voltage(V) 1.4 Vth, Normalized Gate-Source Threshold Voltage R DS(on), On-Resistance Normalized 200 160 120 VG S =-2.5V 80 VG S =-4.5V 2 4 6 8 1.8 2.4 3.6 3.0 V G S =-2.5V I D = -2.8A 1.3 1.2 1.1 V G S =-4.5V I D =-3.3 A 1.0 0 10 0 25 50 75 100 125 150 T j ( °C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 BVDSS, Normalized Drain-Source Breakdown Voltage RDS(on)(m Ω) 1.5 1 1.2 Figure 2. Transfer Characteristics 240 40 0.6 -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 25 C 6 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jun,02,2010 3 www.samhop.com.tw STS2305A Ver 1.1 20.0 180 -Is, Source-drain current(A) I D =-3.3A 150 RDS(on)(m Ω) 120 125 C 90 60 75 C 25 C 30 0 0 0.5 1.0 2.0 2.5 3.0 3.5 4.0 1.5 10.0 5.0 25 C 125 C 75 C 1.0 4.5 0 1.2 1.6 2.0 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage -VGS, Gate to Source Voltage(V) 600 500 C, Capacitance(pF) 0.8 -VSD, Body Diode Forward Voltage(V) -VGS, Gate-to-Source Voltage(V) Ciss 400 0.4 Coss 300 Crss 200 100 5 V DS = -10V I D =-3.3A 4 3 2 1 0 0 0 4 2 6 8 10 12 0 2 4 8 6 10 12 Qg, Total Gate Charge(nC) -V DS, Drain-to-Source Voltage(V) Figure 10. Gate Charge Figure 9. Capacitance Tf Tr -ID, Drain Current(A) Switching Time(ns) TD(off ) 100 60 TD(on) 10 VDS=-10V,ID=-1A 10 R 1 6 10 im it 10 1m 10 10 DC 0.1 0.1 60 100 )L 1 VGS=-4.5V 1 D ON S( 10 0m 0u s s ms s s V G S =-4.5V S ingle P ulse T A =25 C 1 10 30 50 Rg, Gate Resistance(Ω) -V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jun,02,2010 4 www.samhop.com.tw STS2305A Ver 1.1 Normalized Transient Thermal Resistance 10 1 0.5 0.2 0. 1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.0000 1 1. 2. 3. 4. 0.000 1 0.001 0.01 0. 1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 13. Normalized Thermal Transient Impedance Curve Jun,02,2010 5 www.samhop.com.tw STS2305A Ver 1.1 PACKAGE OUTLINE DIMENSIONS SOT23-3L Symbol A A1 A2 b c D E E1 e e1 L L1 Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° Jun,02,2010 6 www.samhop.com.tw STS2305A Ver 1.1 SOT23-3L Tape and Reel Data SOT23-3L Carrier Tape TR FEED DIRECTION UNIT:р PACKAGE SOT23-3L A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.22 ²0.04 1.22 ²0.10 О1.00 +0.05 О1.50 +0.10 8.00 +0.30 -0.10 REEL SIZE M N W W1 H K S G R V О178 О178 ²1 О60 ²1 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 10.5 2.00 ²0.5 О10.0 5.00 18.00 2.77 ²0.10 3.15 ²0.10 SOT23-3L Reel UNIT:р TAPE SIZE 8р Jun,02,2010 7 www.samhop.com.tw