SDT03N04

SDT03N04
Green
Product
S a mHop Microelectronics C orp.
Ver 1.2
N-Channel Enhancement Mode Field Effect Transistor
F E AT UR E S
S uper high dense cell design for low R DS (ON ).
PRODUCT SUMMARY
V DSS
ID
400V
1.5A
R DS(ON) ( Ω) Typ
R ugged and reliable.
S urface Mount P ackage.
3.5 @ VGS=10V
D
G
G
S
S
SO T - 22 3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
a
TA=25°C
b
b
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Limit
400
±30
Units
V
V
1.5
A
6
A
2.98
W
-55 to 150
°C
42
Details are subject to change without notice.
°C/W
Oct,08,2010
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SDT03N04
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Min
VGS=0V , ID=250uA
400
Typ
VGS= ±30V , VDS=0V
Drain-Source On-State Resistance
Forward Transconductance
VDS=10V , ID=1A
2
Max
Units
1
±100
uA
V
VDS=320V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Conditions
2.9
3.5
0.9
4
4.0
nA
V
ohm
S
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS=25V,VGS=0V
f=1.0MHz
186
31
6.3
pF
pF
pF
13
ns
10
ns
21
ns
5.5
ns
c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=200V,ID=1A,VGS=10V
4.4
nC
Qgs
Qgd
Gate-Source Charge
VDS=200V,ID=1A,
VGS=10V
1.2
nC
1.6
nC
Gate-Drain Charge
VDD=200V
ID=1A
VGS=10V
RGEN=25 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.79
1
A
1.4
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Oct,08,2010
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SDT03N04
Ver 1.2
4.0
1.20
VGS = 10V
VGS = 6V
3.0
ID, Drain Current(A)
ID, Drain Current(A)
3.5
2.5
VGS = 5.5V
2.0
1.5
1.0
0.96
Tj=125 C
0.72
-55 C
0.48
25 C
0.24
0.5
0
0
0
2.0
1.5
1.0
0.5
2.5
3.0
0
1
Figure 1. Output Characteristics
2.5
6
2.2
RDS(ON), On-Resistance
Normalized
RDS(on)(Ω)
4
5
6
Figure 2. Transfer Characteristics
7
5
VGS = 10V
4
3
2
V G S =10V
I D = 1A
1.9
1.6
1.3
1.0
0.6
1
1.2
1.8
2.4
0.7
3.0
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100
125
150
Tj, Junction Temperature ( C)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
50
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
25
Tj( C)
ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
3
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
2
75 100 125 150
Tj, Junction Temperature ( C)
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
Oct,08,2010
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SDT03N04
Ver 1.2
20.0
9.0
I D =1A
Is, Source-drain current (A)
7.5
RDS(on)( Ω)
6.0
125 C
4.5
75 C
3.0
25 C
1.5
5.0
75 C
125 C
25 C
1.0
0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
V GS, Gate-Sorce Voltage(V)
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VGS, Gate to Source Voltage (V)
300
250
C, Capacitance (pF)
10.0
Ciss
200
150
100
Coss
50
Crss
V DS = 200V
I D =1A
8
6
4
2
0
0
0
10
20
40
30
0
50
1
2
3
4
5
6
7
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
8
300
10
TD( on)
10
Tr
Tf
VDS=200V,ID=1A
VGS=10V
1
10
100
S
(O
N)
10
1
10 s
DC s
0.1
0.01
0.001
0.1
1
L im
it
TD( of f )
1
RD
ID, Drain Current (A)
Switching Time(ns)
100
0m
ms
s
VGS=10V
Single Pulse
TA=25 C
1
10
100
1000
VDS, Drain-Source Voltage (V)
Rg, Gate Resistance(Ω)
Figure 12. Maximum Safe
Operating Area
Figure 11. switching characteristics
Oct,08,2010
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SDT03N04
Ver1.2
1
Normalized Transient
Thermal Resistance
0.5
0.2
0.1
0.1
0.05
P DM
0.02
0.01
0.01
t1
t2
Single Pulse
1. RthJA (t)=r (t) * R th JA
2. R thJA=See Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
0.001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
10
100
1000
Figure 13. Normalized Thermal Transient Impedance Curve
Oct,08,2010
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SDT03N04
Ver1.2
D
B
SOT-223
C
0.10 M C B
C
C
0.080
A
C1
(C)
E
b1
E1
0.10 M C B
b
SECTION B-B
DETAIL "A"
g
1
3
2
B
C1
B
e
b
0.10 M C B
(C)
C
e1
b3
b2
SECTION C-C
GAUGE PLANE
A2
SEATING PLANE
L
0.25
DETAIL "A"
A
C
A1
COMMON
SYMBOL
A
A1
A2
b
b1
b2
b3
g
c
c1
D
E
E1
e
e1
L
DIMENSIONS MILLIMETER
MIN.
MOM.
MIN.
1.80
0.10
0.02
1.60
1.50
1.70
0.84
0.76
0.66
0.60
0.71
0.79
3.10
2.90
3.00
3.05
2.95
2.84
0.06
0.35
0.23
0.30
0.23
0.28
0.33
6.50
6.70
6.30
6.70
7.30
7.00
3.50
3.30
3.70
2.30 BSC
4.60 BSC
0.81
10 °
0°
DIMENSIONS INCHE
MIN.
MOM.
0.0008
0.0591
0.0260
0.0236
0.1142
0.1118
0.0630
0.0300
0.0280
0.1181
0.1161
0.0090
0.0090
0.2480
0.2638
0.1300
0.0319
0°
0.1181
0.0110
0.2560
0.2760
0.1378
0.0906 BSC
0.1811 BSC
MAX.
0.0709
0.0039
0.0669
0.0330
0.0311
0.1220
0.1200
0.0020
0.1378
0.0130
0.2638
0.2874
0.1457
10 °
Oct,08,2010
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SDT03N04
Ver1.2
SOT-223 Tape and Reel Data
SOT-223 Carrier Tape
D1
P0
P2
P1
E1
E2
E
D0
T
K0
B0
A0
unit:р
PACKAGE
A0
B0
K0
7.42
²0.1
6.83
²0.1
1.88
²0.1
D0
1.50
+ 0.25
D1
1.60
+ 0.1
E
12.0
+ 0.3
- 0.1
E1
E2
P0
P1
P2
T
1.75
²0.1
5.50
²0.5
8.0
²0.1
4.00
²0.1
2.00
²0.05
0.292
²0.02
SOT-223 Reel
UNIT:р
REEL SIZE
ӿ330
² 0.5
M
N
ӿ97.0
² 1.0
W
2.2
W1
H
K
S
13.0
+ 1.5
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Oct,08,2010
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