SDT03N04 Green Product S a mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor F E AT UR E S S uper high dense cell design for low R DS (ON ). PRODUCT SUMMARY V DSS ID 400V 1.5A R DS(ON) ( Ω) Typ R ugged and reliable. S urface Mount P ackage. 3.5 @ VGS=10V D G G S S SO T - 22 3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a TA=25°C b b PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Limit 400 ±30 Units V V 1.5 A 6 A 2.98 W -55 to 150 °C 42 Details are subject to change without notice. °C/W Oct,08,2010 1 www.samhop.com.tw SDT03N04 Ver 1.2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Min VGS=0V , ID=250uA 400 Typ VGS= ±30V , VDS=0V Drain-Source On-State Resistance Forward Transconductance VDS=10V , ID=1A 2 Max Units 1 ±100 uA V VDS=320V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=1A DYNAMIC CHARACTERISTICS CISS COSS CRSS Conditions 2.9 3.5 0.9 4 4.0 nA V ohm S c Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS VDS=25V,VGS=0V f=1.0MHz 186 31 6.3 pF pF pF 13 ns 10 ns 21 ns 5.5 ns c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VDS=200V,ID=1A,VGS=10V 4.4 nC Qgs Qgd Gate-Source Charge VDS=200V,ID=1A, VGS=10V 1.2 nC 1.6 nC Gate-Drain Charge VDD=200V ID=1A VGS=10V RGEN=25 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=1A 0.79 1 A 1.4 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Oct,08,2010 2 www.samhop.com.tw SDT03N04 Ver 1.2 4.0 1.20 VGS = 10V VGS = 6V 3.0 ID, Drain Current(A) ID, Drain Current(A) 3.5 2.5 VGS = 5.5V 2.0 1.5 1.0 0.96 Tj=125 C 0.72 -55 C 0.48 25 C 0.24 0.5 0 0 0 2.0 1.5 1.0 0.5 2.5 3.0 0 1 Figure 1. Output Characteristics 2.5 6 2.2 RDS(ON), On-Resistance Normalized RDS(on)(Ω) 4 5 6 Figure 2. Transfer Characteristics 7 5 VGS = 10V 4 3 2 V G S =10V I D = 1A 1.9 1.6 1.3 1.0 0.6 1 1.2 1.8 2.4 0.7 3.0 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 50 Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 25 Tj( C) ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 3 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1 2 75 100 125 150 Tj, Junction Temperature ( C) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Oct,08,2010 3 www.samhop.com.tw SDT03N04 Ver 1.2 20.0 9.0 I D =1A Is, Source-drain current (A) 7.5 RDS(on)( Ω) 6.0 125 C 4.5 75 C 3.0 25 C 1.5 5.0 75 C 125 C 25 C 1.0 0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 V GS, Gate-Sorce Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage (V) 300 250 C, Capacitance (pF) 10.0 Ciss 200 150 100 Coss 50 Crss V DS = 200V I D =1A 8 6 4 2 0 0 0 10 20 40 30 0 50 1 2 3 4 5 6 7 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 8 300 10 TD( on) 10 Tr Tf VDS=200V,ID=1A VGS=10V 1 10 100 S (O N) 10 1 10 s DC s 0.1 0.01 0.001 0.1 1 L im it TD( of f ) 1 RD ID, Drain Current (A) Switching Time(ns) 100 0m ms s VGS=10V Single Pulse TA=25 C 1 10 100 1000 VDS, Drain-Source Voltage (V) Rg, Gate Resistance(Ω) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Oct,08,2010 4 www.samhop.com.tw SDT03N04 Ver1.2 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 0.01 t1 t2 Single Pulse 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) 10 100 1000 Figure 13. Normalized Thermal Transient Impedance Curve Oct,08,2010 5 www.samhop.com.tw SDT03N04 Ver1.2 D B SOT-223 C 0.10 M C B C C 0.080 A C1 (C) E b1 E1 0.10 M C B b SECTION B-B DETAIL "A" g 1 3 2 B C1 B e b 0.10 M C B (C) C e1 b3 b2 SECTION C-C GAUGE PLANE A2 SEATING PLANE L 0.25 DETAIL "A" A C A1 COMMON SYMBOL A A1 A2 b b1 b2 b3 g c c1 D E E1 e e1 L DIMENSIONS MILLIMETER MIN. MOM. MIN. 1.80 0.10 0.02 1.60 1.50 1.70 0.84 0.76 0.66 0.60 0.71 0.79 3.10 2.90 3.00 3.05 2.95 2.84 0.06 0.35 0.23 0.30 0.23 0.28 0.33 6.50 6.70 6.30 6.70 7.30 7.00 3.50 3.30 3.70 2.30 BSC 4.60 BSC 0.81 10 ° 0° DIMENSIONS INCHE MIN. MOM. 0.0008 0.0591 0.0260 0.0236 0.1142 0.1118 0.0630 0.0300 0.0280 0.1181 0.1161 0.0090 0.0090 0.2480 0.2638 0.1300 0.0319 0° 0.1181 0.0110 0.2560 0.2760 0.1378 0.0906 BSC 0.1811 BSC MAX. 0.0709 0.0039 0.0669 0.0330 0.0311 0.1220 0.1200 0.0020 0.1378 0.0130 0.2638 0.2874 0.1457 10 ° Oct,08,2010 6 www.samhop.com.tw SDT03N04 Ver1.2 SOT-223 Tape and Reel Data SOT-223 Carrier Tape D1 P0 P2 P1 E1 E2 E D0 T K0 B0 A0 unit:р PACKAGE A0 B0 K0 7.42 ²0.1 6.83 ²0.1 1.88 ²0.1 D0 1.50 + 0.25 D1 1.60 + 0.1 E 12.0 + 0.3 - 0.1 E1 E2 P0 P1 P2 T 1.75 ²0.1 5.50 ²0.5 8.0 ²0.1 4.00 ²0.1 2.00 ²0.05 0.292 ²0.02 SOT-223 Reel UNIT:р REEL SIZE ӿ330 ² 0.5 M N ӿ97.0 ² 1.0 W 2.2 W1 H K S 13.0 + 1.5 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Oct,08,2010 7 www.samhop.com.tw