STS3116E

STS3116E
Green
Product
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
94 @ VGS=10V
30V
2.6A
Suface Mount Package.
107 @ VGS=4.5V
ESD Protected.
139 @ VGS=2.5V
D
S OT 23
G
D
S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Limit
30
±12
2.6
Units
V
V
A
2.1
A
9
A
1.25
W
0.8
W
-55 to 150
°C
100
°C/W
Jan,08,2014
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STS3116E
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
Conditions
Min
VGS=0V , ID=250uA
30
Drain-Source On-State Resistance
gFS
Forward Transconductance
Max
Units
1
±10
uA
uA
0.9
75
1.5
94
V
m ohm
82
107
m ohm
103
6.5
139
m ohm
S
V
VDS=24V , VGS=0V
VGS= ±12V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1.3A
RDS(ON)
Typ
VGS=4.5V , ID=1.2A
VGS=2.5V , ID=1A
VDS=5V , ID=1.3A
0.5
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=15V,VGS=0V
f=1.0MHz
pF
pF
pF
396
56
33
c
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=1.3A,VGS=10V
VDS=15V,ID=1.3A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage b
VGS=0V,IS= 1A
VSD
ns
ns
ns
ns
46
77
413
48
3.8
0.6
1.3
0.82
nC
nC
nC
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Jan,08,2014
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STS3116E
Ver 1.1
10
9.0
VGS=4.5V
7.2
ID, Drain Current(A)
I D, Drain Current(A)
VGS=10V
VGS=3V
VGS=2.5V
VGS=2V
5.4
3.6
8
6
4
Tj=125 C
2
1.8
VGS=1.5V
25 C
0
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
VDS, Drain-to-Source Voltage(V)
200
1.8
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
2.0
160
VG S =2.5V
VG S =4.5V
80
VG S =10V
40
3.6
5.4
7.2
1.8
2.4
3.6
3.0
V G S =10V
I D =1.3A
V G S =4.5V
I D =1.2A
1.6
1.4
V G S =2.5V
I D = 1A
1.2
1.0
0
9.0
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.8
1
1.2
Figure 2. Transfer Characteristics
240
1
0.6
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
120
-55 C
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,08,2014
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STS3116E
Ver 1.1
20.0
300
Is, Source-drain current(A)
I D =1.3A
250
RDS(on)(m Ω)
200
150
125 C
100
50
0
25 C
75 C
10.0
5.0
75 C
1.0
0
2
6
4
8
10
0
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
500
Ciss
300
200
Coss
Crss
5
10
15
20
25
1.6
2.0
10
V DS = 15V
I D =1.3A
8
6
4
2
30
0
1
2
3
4
Qg, Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
30
5000
VDS=15V,ID=1A
VGS=10V
I D, Drain Current(A)
10
1000
Switching Time(ns)
1.2
0
0
0
0.8
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
100
0.4
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
400
25 C
125 C
TD(off )
Tf
100
Tr
TD(on)
10
1
10
R
Rg, Gate Resistance(Ω)
(O
N)
L im
it
0.1
10
1m
1
1 0 0 ms
0m
s
10
s
DC
1
0u
s
s
V G S =10V
S ingle P ulse
T A =25 C
0.1
100
DS
1
10
30 50
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jan,08,2014
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STS3116E
Ver 1.1
Therma l R esis tance
Norm aliz ed Transien t
10
1
0.5
0.2
P DM
0. 1
0.1
t1
t2
0.05
0.02
Single Pulse
0.01
0.01
0.0000 1
1.
2.
3.
4.
0.000 1
0.001
0.01
0. 1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100
1000
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
Jan,08,2014
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STS3116E
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
SOT 23
D
E1
1
2
e
b
DETAIL "A"
A1
e1
L
DETAIL "A"
A
E
3
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
L1
MILLIMETERS
INCHES
MIN
MAX
2.700
3.100
2.200
3.000
1.200
1.700
0.850
1.150
1.800
2.100
0.300
0.510
0.080
0.200
0.000
0.150
0.887
1.300
0.450 REF.
0.600 REF.
MIN
MAX
0.106
0.122
0.118
0.087
0.047
0.067
0.033
0.045
0.071
0.083
0.020
0.019
0.008
0.003
0.000
0.006
0.035
0.051
0.018 REF.
0.024 REF.
O
O
10
0
0
O
10
O
Jan,08,2014
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STS3116E
Ver 1.1
SOT23 Tape and Reel Data
SOT23-3L Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
SOT23-3L
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.22
²0.04
1.22
²0.10
О1.00
+0.05
О1.50
+0.10
8.00
+0.30
-0.10
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
2.77
²0.10
3.15
²0.10
SOT23-3L Reel
UNIT:р
TAPE SIZE
8р
Jan,08,2014
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STS3116E
Ver 1.1
TOP MARKING DEFINITION
Product No.
T6E
XX
SOT-23
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Jan,08,2014
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