STM102D

STM102D
G
P
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V DSS
ID
100V
2.0A
PRODUCT SUMMARY (P-Channel)
R DS(ON) (m Ω) Max
V DSS
ID
-100V
-1.3A
R DS(ON) (m Ω) Max
216 @ VGS=10V
547 @ VGS=-10V
328 @ VGS=4.5V
614 @ VGS=-4.5V
S O-8
1
D2
5
4
G2
D2
6
3
S2
D1
7
2
G1
D1
8
1
S1
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TC=25°C
TC=70°C
a
b
d
EAS
Sigle Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
TC=25°C
TC=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
N-Channel P-Channel
-100
100
±20
±20
-1.3
2.0
Units
V
V
A
1.6
-1.0
A
7.2
-4.7
A
16
25
mJ
2
W
1.28
W
-55 to 150
°C
62.5
°C/W
Nov,30,2011
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STM102D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
100
Typ
Max
1
±100
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
1.0
3
Units
V
uA
nA
1.7
173
216
V
m ohm
VGS=4.5V , ID=0.8A
243
328
m ohm
VDS=10V , ID=1.0A
2
S
VDS=25V,VGS=0V
f=1.0MHz
305
36
23
pF
pF
pF
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
7.5
8.2
16
ns
ns
VDS=50V,ID=1A,VGS=10V
5.5
3.2
0.95
1.7
VDS=VGS , ID=250uA
VGS=10V , ID=1.0A
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
c
VDS=50V,ID=1A,VGS=4.5V
VDS=50V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
VGS=0V,IS=2.0A
Diode Forward Voltage b
ns
ns
4
0.83
nC
nC
nC
nC
1.3
V
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STM102D
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
VGS=0V , ID=-250uA
Min
Typ
-100
-1
±100
VDS=-80V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=-250uA
VGS=-10V , ID=-0.65A
VGS=-4.5V , ID=-0.6A
VDS=-10V , ID=-0.65A
Max
-1.0
Units
V
uA
nA
-1.8
-3
438
547
V
m ohm
455
3.6
614
m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
840
47
29
pF
pF
pF
VDD=-50V
ID=-0.65A
VGS=-10V
RGEN= 6 ohm
12
12
48
9
ns
ns
ns
ns
VDS=-50V,ID=-0.65A,VGS=-10V
15
nC
VDS=-50V,ID=-0.65A,VGS=-4.5V
7
1.5
2.9
nC
VDS=-25V,VGS=0V
f=1.0MHz
c
VDS=-50V,ID=-0.65A,
VGS=-10V
Gate-Drain Charge
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
b
VGS=0V,IS=-3A
-0.86
-1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
Nov,30,2011
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STM102D
Ver 1.0
N-Channel
5
10
ID, Drain Current(A)
4
ID, Drain Current(A)
V G S =10V
V G S =5V
V G S =4.5V
V G S =4V
3
V G S =3.5V
2
V G S =3V
1
8
T j =125 C
6
4
0
0
0
1
0.5
2
1.5
2.5
3
0
V DS, Drain-to-Source Voltage(V)
350
1.8
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
2.0
V G S =4.5V
210
V G S =10V
140
70
1
2
3
4
3.6
4.8
6.0
7.2
V G S =10V
I D =1A
1.6
1.4
V G S =4.5V
I D =0.8A
1.2
1.0
0.8
5
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.3
Vth, Normalized
Gate-Source Threshold Voltage
2.4
Figure 2. Transfer Characteristics
420
280
1.2
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
0
-55 C
25 C
2
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
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STM102D
Ver 1.0
20.0
600
Is, Source-drain current(A)
I D =1A
RDS(on)(m Ω)
500
400
125 C
300
75 C
25 C
200
100
0
0
2
4
6
8
10.0
5.0
125 C
75 C
1.0
10
0
V GS, Gate-to-Source Voltage(V)
0.3
0.6
0.9
1.5
1.2
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
420
V GS, Gate to Source Voltage(V)
10
350
C, Capacitance(pF)
25 C
C is s
280
210
140
C os s
70
C rs s
0
0
5
10
15
20
V DS =50V
I D =1A
8
6
4
2
0
30
25
0
1
2
3
4
5
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
6
70
I D, Drain Current(A)
10
Switching Time(ns)
TD(off)
10
Tr
TD(on)
Tf
V DS =50V ,ID=1A
1
1
6
10
Rg, Gate Resistance(Ω)
it
10
1m
10
10
0m
10
0u
us
s
s
ms
s
0.1
VGS=10V
Single Pulse
TA=25 C
0.01
0.1
60 100
im
DC
V G S =10V
1
RD
O
S(
L
N)
1
10
100
V DS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Nov,30,2011
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STM102D
Ver 1.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
0.1
P DM
0.05
t1
0.1
t2
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
10
R ӰJ A (t)=r (t) * R ӰJ A
R ӰJ A =S ee Datas heet
T J M-T A = P DM* R ӰJ A (t)
Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
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STM102D
Ver 1.0
P-Channel
7.0
V G S =-10V
8
V G S =-3.5V
V G S =-4.5V
6
-I D, Drain Current(A)
-I D, Drain Current(A)
10
V G S =-3V
4
2
0
5.6
4.2
T j=125 C
2.8
25 C
0
0
1
2
4
3
5
6
0
-V DS, Drain-to-Source Voltage(V)
750
1.8
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
2.0
600
V G S =-4.5V
450
V G S =-10V
300
150
6
8
1.0
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.1
1.0
0.9
0.8
0.7
25
50
0
50
25
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
V DS =V G S
I D =-250uA
0
4.2
Tj, Junction Temperature(° C )
1.3
-50 -25
3.5
V G S =-10V
I D =-0.65A
1.2
10
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
0.6
2.8
1.4
-I D, Drain Current(A)
1.2
2.1
V G S =-4.5V
I D =-0.6A
1.6
0.8
0
4
1.4
Figure 2. Transfer Characteristics
900
2
0.7
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
1
-55 C
1.4
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,30,2011
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STM102D
Ver 1.0
20.0
1200
-Is, Source-drain current(A)
ID=-0.65A
RDS(on)(m Ω)
1000
125 C
800
75 C
600
25 C
400
200
0
0
2
6
4
8
10.0
5.0
25 C
125 C
75 C
1.0
0.4
10
-V GS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1.0
1.2
1.4
-V GS, Gate to Source Voltage(V)
10
1000
C, Capacitance(pF)
0.8
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
Ciss
800
600
400
200
Coss
Crss
0
0
5
10
15
20
25
30
VDS=-50V
ID=-0.65A
8
6
4
2
0
0
2
6
4
8
10
12
14 16
-V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
10
-I D, Drain Current(A)
1000
Switching Time(ns)
0.6
-VSD, Body Diode Forward Voltage(V)
100
TD(off )
Tf
TD(on)
10
Tr
1
1
6
10
(O
N
10
10
1m
0u
us
s
s
ms
0.1
VGS=-10V
Single Pulse
TA=25 C
0.01
0.1
60 100
S
10
it
DC
VDS=-50V,ID=-0.65A
VGS=-10V
1
RD
im
)L
1
10
100
Rg, Gate Resistance(Ω)
-V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,30,2011
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STM102D
Ver 1.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
Normalized Transient
Thermal Resistance
10
0.5
1
0.2
0.1
P DM
0.05
0.1
t1
t2
0.02
1. RthJA (t)=r (t) * R th JA
2. R thJA=See Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
100
1000
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STM102D
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
SO-8
D
E
A2 A
1
e
A1
b
H
h X 45
O
C
L
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
h
MILLIMETERS
MIN
MAX
1.75
1.35
0.25
0.10
1.63
1.25
0.51
0.31
0.17
0.25
4.80
5.00
3.70
4.00
1.27 REF.
5.80
6.20
1.27
0.40
0±
8±
0.25
0.50
MIN
INCHES
MAX
0.053
0.069
0.010
0.004
0.064
0.049
0.020
0.012
0.010
0.007
0.197
0.189
0.146
0.157
0.050 BSC
0.228
0.244
0.016
0.050
8±
0±
0.020
0.010
Nov,30,2011
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STM102D
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
SOP 8N
150п
A0
6.50
²0.15
B0
5.25
²0.10
D0
K0
ӿ1.5
(MIN)
2.10
²0.10
D1
E
ӿ1.55
²0.10
12.0
+0.3
- 0.1
E1
1.75
²0.10
E2
P0
P1
P2
T
5.5
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.10
0.30
²0.013
SO-8 Reel
W1
S
K
V
M
N
G
R
H
W
UNIT:р
TAPE SIZE
12 р
REEL SIZE
ӿ330
M
330
² 1
N
62
²1.5
W
12.4
+ 0.2
W1
16.8
- 0.4
H
ӿ12.75
+ 0.15
K
S
G
R
V
2.0
²0.15
Nov,30,2011
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