SAMHOP STU313D

STU313D
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
PRODUCT SUMMARY (P-Channel)
R DS(ON) (m Ω) Max
V DSS
ID
30V
16A
R DS(ON) (m Ω) Max
V DSS
ID
-30V
-15A
24 @ VGS=10V
33 @ VGS=-10V
35 @ VGS=4.5V
52 @ VGS=-4.5V
D2
D1
D1/D2
G1
S1
G2
G1
S2
G2
TO-252-4L
S1
N-ch
S2
P -ch
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
N-Channel P-Channel
30
-30
±20
±20
TC=25°C
TC=70°C
a
b
EAS
-Pulsed
Sigle Pulse Avalanche Current d
Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
I AS
a
L=0.5mH
TC=25°C
TC=70°C
THERMAL CHARACTERISTICS
a
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Units
V
V
16
-15
A
12.5
-11.5
A
45
-43
7.5
5.0
A
A
14
6.3
mJ
10
W
6.5
W
-55 to 150
°C
12
60
°C/W
°C/W
Jul,30,2008
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STU313D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS c
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
VGS=0V , ID=250uA
Typ
1
±10
VGS= ±20V , VDS=0V
1
Diode Forward Voltage
b
3
Units
V
uA
uA
2
19
24
V
m ohm
VGS=4.5V , ID=6.5A
26
35
m ohm
VDS=5V , ID=8A
14
S
VDS=15V,VGS=0V
f=1.0MHz
440
130
70
pF
pF
pF
10
11.5
ns
ns
ns
ns
VDS=VGS , ID=250uA
VGS=10V , ID=8A
c
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
17
22
VDS=15V,ID=8A,VGS=10V
8.3
nC
VDS=15V,ID=8A,VGS=4.5V
4.3
1.4
2.1
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
Max
30
VDS=24V , VGS=0V
VDS=15V,ID=8A,
VGS=10V
Gate-Drain Charge
Min
VGS=0V,IS=1A
0.77
nC
nC
1
1.3
A
V
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STU313D
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Min
VGS=0V , ID=-250uA
-30
Typ
-1
±10
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=-250uA
VGS=-10V , ID=-7.5A
VGS=-4.5V , ID=-6A
VDS=-10V , ID=-7.5A
-1
-1.7
26
39
10
VDS=-15V,VGS=0V
f=1.0MHz
V
uA
uA
33
V
m ohm
52
m ohm
S
pF
pF
pF
11.8
18
ns
ns
ns
ns
c
VDD=-15V
ID=-1A
VGS=-10V
RGEN=6 ohm
65
39
VDS=-15V,ID=-7.5A,VGS=-10V
16
nC
VDS=-15V,ID=-7.5A,VGS=-4.5V
7.8
1.6
4.8
nC
VDS=-15V,ID=-7.5A,
VGS=-10V
Gate-Drain Charge
Diode Forward Voltage
-3
Units
815
225
130
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
Max
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Conditions
b
VGS=0V,IS=-2A
-0.78
nC
nC
-2
-1.3
A
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Jul,30,2008
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STU313D
Ver 1.0
N-Channel
35
20
VGS=10V
VGS=4.5V
VGS=5V
VGS=4V
I D, Drain Current(A)
I D, Drain Current(A)
28
21
VGS=3.5V
14
7
VGS=3V
0
16
12
8
25 C
0
0
0.5
1
1.5
2
2.5
3
0
V DS, Drain-to-Source Voltage(V)
50
1.8
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
2.0
40
VGS=4.5V
30
20
VGS=10V
10
2.1
2.8
3.5
4.2
V G S =10V
I D =8A
1.6
1.4
1.2
V G S =4.5V
I D =6.5A
1.0
0.8
1
7
14
21
28
0
35
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
BVDSS, Normalized
Drain-Source Breakdown Voltage
VDS=VGS
ID=250uA
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
50
25
Tj, Junction Temperature(° C )
I D, Drain Current(A)
Vth, Normalized
Gate-Source Threshold Voltage
1.4
Figure 2. Transfer Characteristics
60
0.6
0.7
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
1
-55 C
Tj=125 C
4
100 125 150
Tj, Junction Temperature( ° C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,30,2008
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STU313D
Ver 1.0
60
20.0
Is, Source-drain current(A)
ID=8A
R DS(on)(m Ω)
50
75 C
40
125 C
30
20
25 C
10
0
0
2
4
6
8
10.0
25 C
1.0
10
0.4
V GS, Gate-to-Source Voltage(V)
1.0
1.2
1.4
10
V GS, Gate to Source Voltage(V)
500
C, Capacitance(pF)
0.8
Figure 8. Body Diode Forward Voltage
Variation with Source Current
600
Ciss
400
300
200
Coss
100
Crss
0
0
5
10
15
20
25
30
VDS=15V
ID=8A
8
6
4
2
0
0
1
3
2
4
5
6
7
8
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
600
9
100
100
60
I D, Drain Current(A)
Switching Time(ns)
0.6
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Tr
TD(off )
TD(on)
Tf
10
VDS=15V,ID=1A
10
1
6 10
60 100
Rg, Gate Resistance(Ω)
)L
im
it
10
DC
1m
m
0u
s
s
s
1
0.1
0.1
300 600
RD
ON
S(
10
VGS=10V
1
75 C
125 C
V G S =10V
S ingle P ulse
T c=25 C
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Jul,30,2008
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STU313D
Ver 1.0
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
0.05
P DM
0.02
t1
t2
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
0.00001
0.0001
0.001
0.01
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jul,30,2008
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STU313D
Ver 1.0
P-Channel
30
20
V G S =-4.5V
V G S =-5V
24
-I D, Drain Current(A)
-I D, Drain Current(A)
V G S =-10V
V G S =-4V
18
V G S =-3.5V
12
6
16
12
8
T j=125 C
-55 C
25 C
4
V G S =-3V
0
0
0
0.5
1
2.5
2
1.5
3
0
-V DS, Drain-to-Source Voltage(V)
100
1.4
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
1.5
80
60
V G S =-4.5V
40
V G S =-10V
6
12
18
24
3.2
4.0
4.8
V G S =-10V
I D =-7.5A
1.3
1.2
1.1
V G S =-4.5V
I D =-6A
1.0
0.8
1
2.4
Figure 2. Transfer Characteristics
120
0
1.6
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
20
0.8
30
0
25
50
75
100
125
150
T j ( °C )
-ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
-BVDSS, Normalized
Drain-Source Breakdown Voltage
-Vth, Normalized
Gate-Source Threshold Voltage
1.3
V DS =V G S
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,30,2008
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STU313D
Ver 1.0
120
20.0
-Is, Source-drain current(A)
I D =-7.5A
R DS(on)(m Ω)
100
80
75 C
60
125 C
40
25 C
20
0
0
2
4
6
8
25 C
125 C
1.0
0.4
10
1.0
1.2
1.4
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
-V GS, Gate to Source Voltage(V)
C is s
800
600
400
C os s
200
C rs s
0
0
5
10
15
20
25
30
V DS =-15V
I D =-20A
8
6
4
2
0
0
2
6
4
-V DS, Drain-to-Source Voltage(V)
8
10
12
14 16
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
600
100
60
TD(off )
-ID, Drain Current(A)
Tr
Switching Time(ns)
0.8
0.6
-VSD, Body Diode Forward Voltage(V)
1000
Tf
TD(on)
10
VDS=-15V,ID=-1A
10
R
1
6 10
60 100
it
10
1m
0u
s
s
V G S =10V
S ingle P ulse
T c=25 C
0.1
Rg, Gate Resistance(Ω)
(O
im
1
0.1
300 600
DS
L
N)
10
m
DC s
VGS=10V
1
75 C
-V GS, Gate-to-Source Voltage(V)
1200
C, Capacitance(pF)
10.0
1
10
100
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Jul,30,2008
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STU313D
Ver 1.0
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
0.05
P DM
t1
0.02
t2
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
0.00001
0.0001
0.001
0.01
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jul,30,2008
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STU313D
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
E
TO-252-4L
A
b2
C
L3
1
D1
D
E1
H
1
2
3
4
5
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.200
0.000
0.440
0.635
5.210
0.450
6.000
5.200
6.400
4.400
1.270
9.400
1.397
2.743
0.508
0.890
0.640
0°
7°
INCHES
MAX
2.387
0.127
0.680
0.787
5.460
0.584
6.223
5.515
6.731
5.004
BSC
10.400
1.770
REF.
REF.
1.270
1.010
10 °
REF.
MIN
0.087
0.000
0.017
0.025
0.205
0.018
0.236
0.205
0.252
0.173
0.050
0.370
0.055
0.108
0.020
0.035
0.025
0°
7°
MAX
0.094
0.005
0.027
0.031
0.215
0.023
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.050
0.040
10°
REF.
Jul,30,2008
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STU313D
Ver 1.0
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape
K0
T
6 °Max
B0
A0
SECTION A-A
P1
P2
E
E2
D1
SECTION B-B
E1
B
4 ° Max
A
D0
P0
FEED DIRECTION
B
A
UNIT:р
PACKAGE
TO-252
(16 р*
A0
B0
K0
6.96
²0.1
10.49
²0.1
2.79
²0.1
D0
D1
E
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
TO-252-4L Reel
E1
E2
P0
P1
P2
T
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
ӿ97
² 1.0
W
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Jul,30,2008
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