STC3116E

STC3116E
Green
Product
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
94 @ VGS=10V
30V
2A
Suface Mount Package.
107 @ VGS=4.5V
ESD Protected.
139 @ VGS=2.5V
D
S OT -323
G
D
S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
30
±12
2
Units
V
V
A
1.6
A
8
A
1
W
0.64
W
-55 to 150
°C
125
°C/W
Dec,01,2014
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STC3116E
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
Conditions
Min
VGS=0V , ID=250uA
30
Max
Units
1
±10
uA
uA
0.9
75
1.5
94
V
m ohm
Drain-Source On-State Resistance
VGS=4.5V , ID=0.9A
82
107
m ohm
gFS
Forward Transconductance
VGS=2.5V , ID=0.8A
103
6.5
139
m ohm
S
V
VDS=24V , VGS=0V
VGS= ±12V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1.0A
RDS(ON)
Typ
VDS=5V , ID=1.0A
0.5
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=15V,VGS=0V
f=1.0MHz
pF
pF
pF
396
56
33
c
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=1.0A,VGS=10V
VDS=15V,ID=1.0A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VGS=0V,IS= 1.0A
VSD
ns
ns
ns
ns
46
77
413
48
3.8
0.6
1.3
0.82
nC
nC
nC
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Dec,01,2014
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STC3116E
Ver 1.1
10
9.0
VGS=4.5V
7.2
ID, Drain Current(A)
I D, Drain Current(A)
VGS=10V
VGS=3V
VGS=2.5V
VGS=2V
5.4
3.6
8
6
4
Tj=125 C
2
1.8
VGS=1.5V
25 C
0
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
VDS, Drain-to-Source Voltage(V)
200
1.8
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
2.0
160
VG S =2.5V
VG S =4.5V
VG S =10V
40
1.8
3.6
5.4
7.2
1.8
2.4
3.6
3.0
V G S =10V
I D =1A
V G S =4.5V
I D =0.9A
1.6
1.4
V G S =2.5V
I D = 0.8A
1.2
1.0
0
9.0
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1
0.1
1.2
Figure 2. Transfer Characteristics
240
80
0.6
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
120
-55 C
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,01,2014
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STC3116E
Ver 1.1
20.0
300
Is, Source-drain current(A)
I D =1A
250
RDS(on)(m Ω)
200
150
125 C
100
75 C
50
0
25 C
10.0
5.0
75 C
1.0
0
2
6
4
8
10
0
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
500
Ciss
300
200
Coss
Crss
5
10
15
20
25
1.6
2.0
10
V DS = 15V
I D =1A
8
6
4
2
30
0
1
2
3
4
Qg, Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
30
5000
I D, Drain Current(A)
VDS=15V,ID=1A
VGS=10V
1000
Switching Time(ns)
1.2
0
0
0
0.8
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
100
0.4
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
400
25 C
125 C
TD(off )
Tf
100
Tr
TD(on)
10
1
10
10
RD
Rg, Gate Resistance(Ω)
)L
im
it
10
1m
0u
s
s
10
1 0 ms
0m
s
10
s
DC
1
0.1
V G S =10V
S ingle P ulse
T A =25 C
0.1
100
ON
S(
1
10
30 50
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Dec,01,2014
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STC3116E
Ver 1.1
Thermal Resistance
Normalized Transient
10
1
0.5
P DM
0.2
t1
0.1
0.1
t2
0.05
0.02
Single Pulse
0.01
0.01
0.00001
1.
2.
3.
4.
0.0001
0.001
0.01
0.1
1
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec)
Figure 7. Normalized Thermal Transient Impedance Curve
Dec,01,2014
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STC3116E
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
SOT 323
D
E1
1
2
e
b
DETAIL "A"
A1
e1
L
DETAIL "A"
A
E
3
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
MILLIMETERS
INCHES
MIN
MAX
2.000
2.200
2.150
2.450
1.150
1.350
0.650 TYP
1.200
1.400
0.150
0.400
0.150
0.080
0.100
0.000
0.900
1.000
0.260
0.460
O
O
8
0
MIN
MAX
0.079
0.087
0.085
0.096
0.045
0.053
0.026 TYP
0.047
0.055
0.016
0.006
0.006
0.003
0.000
0.004
0.035
0.039
0.018
0.010
O
O
8
0
Dec,01,2014
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STC3116E
Ver 1.1
SOT-323 Tape and Reel Data
SOT-323 Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
SOT-323
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
О1.50
+0.10
8.00
+0.30
-0.10
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.254
²0.02
1.19
²0.10
О1.00
+0.25
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
2.40
²0.10
2.40
²0.10
SOT-323 Reel
UNIT:р
TAPE SIZE
8р
Dec,01,2014
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STC3116E
Ver 1.1
TOP MARKING DEFINITION
Product No.
C6E
XXX
SOT-323
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Wafer Lot No.
Dec,01,2014
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