STB4410 STP4410 Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 100V 75A 7.0 @ VGS=10V High power and current handling capability. TO-220 & TO-263 package. D D G G D S S S TB S E R IE S TO-263(DD-P AK) G S TP S E R IE S TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed c Units 100 ±20 V V 75 A 63 390 A A 576 mJ TC=25°C 75 W TC=70°C 52.5 W -55 to 175 °C 2 62.5 °C/W °C/W T C =25 °C T C =70 °C ac d EAS Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Limit Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Dec,26,2014 1 www.samhop.com.tw STB4410 STP4410 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body leakage current ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS DYNAMIC CISS COSS CRSS Drain-Source On-State Resistance Forward Transconductance CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions Min VGS=0V , ID=250uA 100 Typ VGS= ±20V , VDS=0V VDS=10V , ID=37.5A VDS=25V,VGS=0V f=1.0MHz 2 Units 1 ±100 uA V VDS=80V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=37.5A Max 3 7.0 4 9.0 nA V 74 m ohm S 3715 515 315 pF pF pF 116 147 113 ns ns ns ns nC b VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=25A,VGS=10V VDS=50V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage VGS=0V,IS=10A 37 58 9.5 26 0.77 nC nC 1.3 V Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz. Dec,26,2014 2 www.samhop.com.tw STB4410 STP4410 Ver 1.0 35 100 80 VG S = 6V ID, Drain Current(A) ID, Drain Current(A) VG S =10V VG S = 5V 60 40 20 21 T j=125 C 14 25 C 0 0.5 1.5 1.0 2.0 2.5 3.0 0 3 4 5 6 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 15 2.00 R DS(on), On-Resistance Normalized 2.25 12 9 V G S =10V 6 3 1 20 40 60 80 1.50 1.25 1.00 0.75 100 V G S =10V I D =37.5A 1.75 0 Figure 3. On-Resistance vs. Drain Current and Gate Voltage BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 50 25 Tj, Junction Temperature(° C ) I D, Drain Current(A) Vth, Normalized Gate-Source Threshold Voltage 2 1 V DS, Drain-to-Source Voltage(V) 18 0 -55 C 7 0 0 RDS(on)(m Ω) 28 100 125 150 Tj, Junction Temperature(° C ) 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Dec,26,2014 3 www.samhop.com.tw STB4410 STP4410 Ver 1.0 20 30 Is, Source-drain current(A) I D = 37.5A RDS(on)(m Ω) 25 20 125 C 15 75 C 10 25 C 5 0 2 0 4 6 8 125 C 75 C 25 C 1 10 0 0.2 0.4 0.6 0.8 1.0 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 4800 4000 C, Capacitance(pF) 10 Ciss 3200 2400 1600 Coss 800 Crss V DS =50V I D =25A 8 6 4 2 0 0 0 5 15 10 20 25 30 0 10 20 30 50 40 60 70 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 1000 Switching Time(ns) 1000 I D, Drain Current(A) V DS =50V,I D =1A V GS =10V Tr TD(on) 100 TD(off ) Tf 100 RD 1 10 Rg, Gate Resistance(Ω) it 10 10 DC 10 0.3 0.1 100 ( L im 10 1 10 S ) ON 1m 0u us s s ms VGS=10V Single Pulse TC=25 C 1 10 100 V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Dec,26,2014 4 www.samhop.com.tw STB4410 STP4410 Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 Square Wave Pulse Duration (msec) Figure 14. Normalized Thermal Transient Impedance Curve Dec,26,2014 5 www.samhop.com.tw STB4410 STP4410 Ver 1.0 Dec,26,2014 6 www.samhop.com.tw STB4410 STP4410 Ver 1.0 Dec,26,2014 7 www.samhop.com.tw STB4410 STP4410 Ver 1.0 TO-220/263AB Tube Dec,26,2014 8 www.samhop.com.tw STB4410 STP4410 Ver 1.0 TOP MARKING DEFINITION TO-220 SamHop Logo STP4410 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Dec,26,2014 9 www.samhop.com.tw STB4410 STP4410 Ver 1.0 TOP MARKING DEFINITION TO-263AB SamHop Logo STB4410 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Dec,26,2014 10 www.samhop.com.tw