STB4410 STP4410

STB4410
STP4410
Green
Product
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
100V
75A
7.0 @ VGS=10V
High power and current handling capability.
TO-220 & TO-263 package.
D
D
G
G
D
S
S
S TB S E R IE S
TO-263(DD-P AK)
G
S TP S E R IE S
TO-220
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
c
Units
100
±20
V
V
75
A
63
390
A
A
576
mJ
TC=25°C
75
W
TC=70°C
52.5
W
-55 to 175
°C
2
62.5
°C/W
°C/W
T C =25 °C
T C =70 °C
ac
d
EAS
Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Limit
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Dec,26,2014
1
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STB4410
STP4410
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
IGSS
Gate-Body leakage current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
DYNAMIC
CISS
COSS
CRSS
Drain-Source On-State Resistance
Forward Transconductance
CHARACTERISTICS b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Conditions
Min
VGS=0V , ID=250uA
100
Typ
VGS= ±20V , VDS=0V
VDS=10V , ID=37.5A
VDS=25V,VGS=0V
f=1.0MHz
2
Units
1
±100
uA
V
VDS=80V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=37.5A
Max
3
7.0
4
9.0
nA
V
74
m ohm
S
3715
515
315
pF
pF
pF
116
147
113
ns
ns
ns
ns
nC
b
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=25A,VGS=10V
VDS=50V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=10A
37
58
9.5
26
0.77
nC
nC
1.3
V
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Dec,26,2014
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STB4410
STP4410
Ver 1.0
35
100
80
VG S = 6V
ID, Drain Current(A)
ID, Drain Current(A)
VG S =10V
VG S = 5V
60
40
20
21
T j=125 C
14
25 C
0
0.5
1.5
1.0
2.0
2.5
3.0
0
3
4
5
6
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
15
2.00
R DS(on), On-Resistance
Normalized
2.25
12
9
V G S =10V
6
3
1
20
40
60
80
1.50
1.25
1.00
0.75
100
V G S =10V
I D =37.5A
1.75
0
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
50
25
Tj, Junction Temperature(° C )
I D, Drain Current(A)
Vth, Normalized
Gate-Source Threshold Voltage
2
1
V DS, Drain-to-Source Voltage(V)
18
0
-55 C
7
0
0
RDS(on)(m Ω)
28
100 125 150
Tj, Junction Temperature(° C )
1.3
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,26,2014
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STB4410
STP4410
Ver 1.0
20
30
Is, Source-drain current(A)
I D = 37.5A
RDS(on)(m Ω)
25
20
125 C
15
75 C
10
25 C
5
0
2
0
4
6
8
125 C
75 C
25 C
1
10
0
0.2
0.4
0.6
0.8
1.0
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
4800
4000
C, Capacitance(pF)
10
Ciss
3200
2400
1600
Coss
800
Crss
V DS =50V
I D =25A
8
6
4
2
0
0
0
5
15
10
20
25
30
0
10
20
30
50
40
60
70
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
1000
Switching Time(ns)
1000
I D, Drain Current(A)
V DS =50V,I D =1A
V GS =10V
Tr
TD(on)
100
TD(off )
Tf
100
RD
1
10
Rg, Gate Resistance(Ω)
it
10
10
DC
10
0.3
0.1
100
(
L im
10
1
10
S
)
ON
1m
0u
us
s
s
ms
VGS=10V
Single Pulse
TC=25 C
1
10
100
V DS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Dec,26,2014
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STB4410
STP4410
Ver 1.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
Dec,26,2014
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STB4410
STP4410
Ver 1.0
Dec,26,2014
6
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STB4410
STP4410
Ver 1.0
Dec,26,2014
7
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STB4410
STP4410
Ver 1.0
TO-220/263AB Tube
Dec,26,2014
8
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STB4410
STP4410
Ver 1.0
TOP MARKING DEFINITION
TO-220
SamHop Logo
STP4410
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Dec,26,2014
9
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STB4410
STP4410
Ver 1.0
TOP MARKING DEFINITION
TO-263AB
SamHop Logo
STB4410
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Dec,26,2014
10
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