2N2221AX MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED SWITCHING BIPOLAR NPN TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) FEATURES 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. • SILICON NPN TRANSISTOR • METAL CASE (JEDEC TO-18) • HIGH SPEED SWITCHING APPLICATIONS: 3 1 2 SUITABLE FOR HIGH SPEED SWITCHING APPLICATIONS TO-18 (TO-206AA) CASE Pin 1 – Emitter PIN CONFIGURATION Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector-Base Voltage (IE = 0V) VCEO VEBO IC Ptot Ptot Tstg Tj Collector-Emitter Voltage (IB = 0V) Emitter Base Voltage (IC = 0V) Collector Current Total Dissipation @ Tamb = 25°C Total Dissipation @ Tcase = 25°C Storage Temperature Max Operating Junction Temperature 60V 40V 5V 0.8A 0.5W 1.8W -65 to 200°C 175°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4055 Issue 1 2N2221AX ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO IEBO V(BR)CBO V(BR)CEO* V(BR)EBO VCE(sat)* VBE(sat)* hFE* Collector Cutoff Current Test Conditions VCB=50V Min. Typ. Max. Unit IE=0V 10 nA Tamb=150°C 10 µA 10 nA Emitter Cutoff Current VEB=3V IC=0V Collector-Base Breakdown Voltage IC=10µA IE=0A 60 V Collector-Emitter Breakdown Voltage IC=10mA IB=0V 30 V Emitter-Base Breakdown Voltage IE=10µA IC=0V 5 V Collector-Emitter Saturation Voltage IC=150mA IB=15mA 0.4 V IC=500mA IB=50mA 1.6 V IC=150mA IB=15mA 1.3 V IC=500mA IB=50mA 2.6 V IC=0.1mA VCE=10V 20 IC=1mA VCE=10V 25 IC=10mA VCE=10V 35 IC=150mA VCE=10V 40 IC=500mA VCE=10V 20 IC=150mA VCE=1V 20 250 Base-Emitter Saturation Voltage DC Current Gain 200 fT Transition Frequency (f=100MHz) IC=20mA VCE=20V CCBO Collector-Base Capacitance (f=100kHz) IE=0A VCB=10V RthJC Thermal Resistance Junction-Case 83.3 RthJA Thermal Resistance Junction-Ambient 300 MHz 8 pF °C/W * Pulsed: Pulse duration = 300µs, duty cycle = 1% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4055 Issue 1