BSW67A MECHANICAL DATA Dimensions in mm (inches) SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 120V • VCEO = 120V • IC = 1.0A 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) DESCRIPTION 45° Underside View TO39 PACKAGE (TO-205AD) Pin 1 = Emitter Pin 2 = Base General Purpose NPN Transistor in a Hermetic TO39 Package Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO IC ICM PTOT PTOT PTOT Tstg Tj RθJC RθJA Collector – Base Voltage (open emitter) Collector – Emitter Voltage (open base) Collector Current (d.c.) Collector Current (peak value) Total Device Dissipation @ Tamb ≤ 45°C Total Device Dissipation @ TC ≤ 25°C Total Device Dissipation @ TC ≤ 100°C Storage Temperature Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 120V 120V 1.0A 2A 0.7W 5W 2.85W –65 to 200°C 200°C 35°C / W 220°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 7881 Issue 1 BSW67A ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 120 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 100μA IE = 0 120 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 100μA IC = 0 6 V VCB = 60V IE = 0 VCB = 60V IE = 0 ICBO Collector Cut-off Current 0.1 50 Tamb = 150°C VCE(sat)* VBE(sat)* hFE* Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain IC = 0.1A IB = 0.01A 0.15 IC = 0.5A IB = 0.05A 0.5 IC = 1.0A IB = 0.15A 1.0 IC = 0.1A IB = 0.01A 0.9 IC = 0.5A IB = 0.05A 1.1 IC = 1.0A IB = 0.15A 1.2 IC = 0.1A VCE = 5V 40 IC = 0.5A VCE = 5V 30 IC = 1.0A VCE = 5V 15 μA V V — t* Pulse test tp = 300μs , δ ≤ 1.5% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 100mA VCE = 20V f = 35MHz 50 MHz Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 20 pF Cibo Input Capacitance VEB = 0 IE = 0 f = 1.0MHz 300 pF ton Turn–On Time IC = 0.5A VCC = 20V toff Turn–Off Time IB1 =- IB2 = 0.05A 0.3 1.0 μs Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 7881 Issue 1