SEME-LAB BSW67A

BSW67A
MECHANICAL DATA
Dimensions in mm (inches)
SILICON NPN
PLANAR TRANSISTOR
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
FEATURES
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
• VCBO = 120V
• VCEO = 120V
• IC = 1.0A
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
DESCRIPTION
45°
Underside View
TO39 PACKAGE (TO-205AD)
Pin 1 = Emitter
Pin 2 = Base
General Purpose NPN Transistor in a
Hermetic TO39 Package
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
IC
ICM
PTOT
PTOT
PTOT
Tstg
Tj
RθJC
RθJA
Collector – Base Voltage (open emitter)
Collector – Emitter Voltage (open base)
Collector Current (d.c.)
Collector Current (peak value)
Total Device Dissipation @ Tamb ≤ 45°C
Total Device Dissipation @ TC ≤ 25°C
Total Device Dissipation @ TC ≤ 100°C
Storage Temperature
Junction Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
120V
120V
1.0A
2A
0.7W
5W
2.85W
–65 to 200°C
200°C
35°C / W
220°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 7881
Issue 1
BSW67A
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)CEO*
Collector – Emitter Breakdown Voltage IC = 10mA
IB = 0
120
V
V(BR)CBO*
Collector – Base Breakdown Voltage
IC = 100μA
IE = 0
120
V
V(BR)EBO*
Emitter – Base Breakdown Voltage
IE = 100μA
IC = 0
6
V
VCB = 60V
IE = 0
VCB = 60V
IE = 0
ICBO
Collector Cut-off Current
0.1
50
Tamb = 150°C
VCE(sat)*
VBE(sat)*
hFE*
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
DC Current Gain
IC = 0.1A
IB = 0.01A
0.15
IC = 0.5A
IB = 0.05A
0.5
IC = 1.0A
IB = 0.15A
1.0
IC = 0.1A
IB = 0.01A
0.9
IC = 0.5A
IB = 0.05A
1.1
IC = 1.0A
IB = 0.15A
1.2
IC = 0.1A
VCE = 5V
40
IC = 0.5A
VCE = 5V
30
IC = 1.0A
VCE = 5V
15
μA
V
V
—
t* Pulse test tp = 300μs , δ ≤ 1.5%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
fT
Transition Frequency
IC = 100mA VCE = 20V
f = 35MHz
50
MHz
Cobo
Output Capacitance
VCB = 10V
IE = 0
f = 1.0MHz
20
pF
Cibo
Input Capacitance
VEB = 0
IE = 0
f = 1.0MHz
300
pF
ton
Turn–On Time
IC = 0.5A
VCC = 20V
toff
Turn–Off Time
IB1 =- IB2 = 0.05A
0.3
1.0
μs
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 7881
Issue 1