SML20H45 TO–258 Package Outline. Dimensions in mm (inches) 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) 13.84 (0.545) 13.58 (0.535) 17.96 (0.707) 17.70 (0.697) 1.14 (0.707) 0.88 (0.035) VDSS 200V 45A ID(cont) Ω RDS(on) 0.040Ω 19.05 (0.750) 12.70 (0.500) 1 2 3 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.86 (0.270) 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 5.08 (0.200) BSC 3.56 (0.140) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 – Drain Pin 2 – Source Pin 3 – Gate D • Faster Switching • Lower Leakage • TO–258 Hermetic Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 200 V ID Continuous Drain Current 45 A IDM Pulsed Drain Current 1 180 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 250 W Derate Linearly 2.0 W/°C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 45 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 2 –55 to 150 1300 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 1.28mH, RG = 25Ω, Peak IL = 45A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99 SML20H45 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 200 Typ. 2 Max. Unit V 45 µA A VGS = 10V , ID = 0.5 ID [Cont.] 0.040 Ω DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 5100 Max. Unit 6120 VDS = 25V 1145 1600 Reverse Transfer Capacitance f = 1MHz 390 585 Qg Total Gate Charge3 VGS = 10V 148 225 Qgs Gate – Source Charge VDD = 0.5 VDSS 47 75 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 75 110 td(on) Turn–on Delay Time VGS = 15V 14 28 tr Rise Time VDD = 0.5 VDSS 21 42 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 48 75 tf Fall Time RG = 1.6Ω 10 20 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) Min. Typ. Max. Unit 45 A 180 ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs 160 ns Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/µs 1.3 µC 1.5 V THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.50 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99