SML100J22 SOT–227 Package Outline. Dimensions in mm (inches) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) Hex Nut M 4 (4 places) 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 2 R 4 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 1 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) VDSS 1000V 22A ID(cont) Ω RDS(on) 0.430Ω 3 3.3 (0 .1 2 9) 3.6 (0.14 3 ) R = 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 4 .0 (0 .1 57 ) (2 P lac e s) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) S D S G * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. D • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular SOT–227 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 1000 V ID Continuous Drain Current 22 A IDM Pulsed Drain Current 1 88 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 500 W 4 W/°C PD Derate Linearly TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 22 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 2 –55 to 150 1300 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 15.38mH, RG = 25Ω, Peak IL = 22A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 5/99 SML100J22 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 50 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 500 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 1000 Typ. 2 Max. Unit V 22 µA A VGS = 10V , ID = 0.5 ID [Cont.] 0.43 Ω DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Min. Typ. 7500 Coss Output Capacitance VDS = 25V 675 Crss Reverse Transfer Capacitance f = 1MHz 310 Qg Total Gate Charge3 VGS = 10V 320 Qgs Gate – Source Charge VDD = 0.5 VDSS 38 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 169 td(on) Turn–on Delay Time VGS = 15V 18 tr Rise Time VDD = 0.5 VDSS 12 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 63 tf Fall Time RG = 0.6Ω 11 Max. Unit pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) Min. Typ. Max. Unit 22 A 88 ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs 560 ns Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/µs 12 µC 1.3 V THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.25 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 5/99