RU6H2K

RU6H2K
N-Channel Advanced Power MOSFET
Features
Pin Description
• 600V/2A,
RDS (ON) =4000mΩ(Typ.)@VGS=10V
• Gate charge minimized
• Low Crss( Typ. 5pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO251
Applications
• High efficiency switch mode power supplies
• Lighting
D
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
2
A
TC=25°C
8
A
TC=25°C
2
TC=100°C
1.2
TC=25°C
56
TC=100°C
22
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
IDP
ID
PD
Maximum Power Dissipation
A
W
RθJC
Thermal Resistance-Junction to Case
2.2
°C/W
RθJA
Thermal Resistance-Junction to Ambient
100
°C/W
34
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
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RU6H2K
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU6H2K
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
600
V
VDS=600V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±30V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=1A
µA
30
2
3
4000
4
V
±100
nA
5000
mΩ
1.2
V
Diode Characteristics
VSD
④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=2A, VGS=0V
ISD=2A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=300V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
µC
8
Ω
280
pF
45
10
VDD=300V, RL=150Ω,
IDS=2A, VGEN=10V,
RG=25Ω
25
ns
20
25
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
0.77
5
Turn-off Fall Time
Gate Charge Characteristics
Qg
ns
⑤
RG
tf
190
9
VDS=480V, VGS=10V,
IDS=2A
nC
1.7
4.5
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by TJmax, IAS =2.6A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
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RU6H2K
Ordering and Marking Information
Device
Marking
Package
RU6H2K
RU6H2K
TO251
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
Packaging Quantity Reel Size Tape width
Tube
3
75
-
-
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℃
RU6H2K
Typical Characteristics
Power Dissipation
Drain Current
3
50
ID - Drain Current (A)
PD - Power (W)
60
40
30
20
10
2
1
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
125
150
175
RDS(ON) - On - Resistance (mΩ)
10000
10µs
100µs
1ms
10ms
RDS(ON) limited
ID - Drain Current (A)
1
100
Drain Current
Safe Operation Area
10
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Ids=1A
8000
6000
4000
DC
0.1
2000
TC=25°C
0.01
0.1
1
0
10
100
0
1000
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
RθJC=2.2°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
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RU6H2K
Typical Characteristics
Output Characteristics
3
RDS(ON) - On Resistance (mΩ)
8V
10V
ID - Drain Current (A)
Drain-Source On Resistance
10000
8000
6V
2
6000
5V
10V
4000
1
2000
3V
0
0
2
4
6
8
0
10
0
1
2
VDS - Drain-Source Voltage (V)
5
Source-Drain Diode Forward
10
VGS=10V
ID=1A
2.0
IS - Source Current (A)
Normalized On Resistance
4
ID - Drain Current (A)
Drain-Source On Resistance
2.5
3
1.5
1.0
0.5
TJ=25°C
Rds(on)=4000mΩ
TJ=150°C
1
TJ=25°C
0.1
0.01
0.0
0.2
-50
-25
0
25
50
75
100
125
150
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
400
Ciss
300
200
Coss
Crss
1
10
1
1.2
1.4
Gate Charge
500
0
0.8
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
100
0.6
100
1000
10
VDS=480V
IDS=2A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
2
4
6
8
10
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
5
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RU6H2K
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
6
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RU6H2K
Package Information
TO251
E
b2
A
D
D1
L2
C1
3Xb
3Xb1
L
L1
E1
c
2Xe
SYMBOL
A
A1
b
b1
b2
c
c1
D
D1
E
E1
e
L
L1
L2
A1
INCH
MM
MIN
2.220
0.890
0.550
0.760
5.200
0.460
0.450
5.950
4.200
6.400
4.750
8.900
1.900
0.900
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
NOM
2.320
1.015
0.610
0.860
5.300
0.515
0.500
6.100
4.350
6.550
4.800
2.280 REF
9.200
2.095
0.950
7
MAX
2.420
1.140
0.670
0.960
5.400
0.570
0.550
6.250
4.500
6.700
4.850
MIN
0.087
0.035
0.022
0.030
0.205
0.018
0.018
0.234
0.165
0.252
0.187
9.500
2.290
1.000
0.350
0.075
0.035
NOM
0.091
0.040
0.024
0.034
0.209
0.020
0.020
0.240
0.171
0.258
0.189
0.090 REF
0.362
0.082
0.037
MAX
0.095
0.045
0.026
0.038
0.213
0.022
0.022
0.246
0.177
0.264
0.191
0.374
0.090
0.039
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RU6H2K
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
8
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