RU55200Q

RU55200Q
N-Channel Advanced Power MOSFET
Features
Pin Description
• 55V/200A,
RDS (ON) =3.3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO247
D
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
• Power Supply
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
55
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
200
A
TC=25°C
800
A
TC=25°C
200
TC=100°C
142
TC=25°C
326
TC=100°C
163
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
IDP
ID
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
A
W
0.46
°C/W
50
°C/W
625
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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RU55200Q
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU55200Q
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
55
65
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
V
VDS=55V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=40A
µA
30
2
3
3.3
4
V
±100
nA
4
mΩ
1.2
V
Diode Characteristics
VSD
④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
70
ns
135
nC
2
Ω
⑤
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=28V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
480
td(ON)
Turn-on Delay Time
40
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
1100
23
pF
ns
120
70
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=28V, IDS=40A,
VGEN=10V,RG=4.5Ω
6700
160
VDS=44V, VGS=10V,
IDS=40A
50
nC
47
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 90A.
③Limited by TJmax, IAS =50A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
2
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RU55200Q
Ordering and Marking Information
Device
Marking
Package
RU55200Q
RU55200Q
TO247
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
Packaging Quantity Reel Size Tape width
Tube
3
30
-
-
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RU55200Q
Typical Characteristics
Drain Current
Power Dissipation
350
250
ID - Drain Current (A)
PD - Power (W)
300
200
250
150
200
150
100
100
50
50
Limited By Package
VGS=10V
0
0
0
25
50
75
100
125
150
175
25
50
100
10µs
100µs
1ms
10ms
10
DC
1
0.1
TC=25°C
0.01
0.1
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
1000
100
125
150
175
Drain Current
Safe Operation Area
10000
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
5
Ids=40A
4
3
2
1
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
1
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
0.1
0.01
Single Pulse
0.001
RθJC=0.46°C/W
0.0001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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RU55200Q
Typical Characteristics
Output Characteristics
280
200
RDS(ON) - On Resistance (mΩ)
8,9,10V
240
ID - Drain Current (A)
Drain-Source On Resistance
5
5V
160
120
4V
80
3V
40
0
0
1
2
3
4
4
10V
3
2
1
0
5
0
40
80
VDS - Drain-Source Voltage (V)
200
Source-Drain Diode Forward
100
VGS=10V
IDS=40A
2.0
IS - Source Current (A)
Normalized On Resistance
160
ID - Drain Current (A)
Drain-Source On Resistance
2.5
120
1.5
1.0
0.5
TJ=25°C
Rds(on)=3.3mΩ
TJ=175°C
10
TJ=25°C
1
0.1
0.0
0.2
-50
-25
0
25
50
75
100
125
150
175
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
8000
7000
Ciss
5000
4000
3000
Coss
2000
1000
Crss
0
1
1
1.2
1.4
Gate Charge
10000
6000
0.8
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
9000
0.6
10
100
10
VDS=44V
IDS=40A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
50
100
150
200
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
5
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RU55200Q
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
6
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RU55200Q
Package Information
TO247
A
C1
H
顶杆孔深h
E2
L
L1
L2
E1
A1
b1
b2
e
b
c
D
SYMBOL
A
A1
b
b1
b2
c
c1
D
E1
E2
L
L1
L2
Φ
e
H
h
MM
MIN
4.850
2.200
1.000
2.800
1.800
0.500
1.900
15.450
40.900
24.800
20.300
7.10
0.000
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
INCH
NOM
5.000
2.400
1.200
3.000
2.000
0.600
2.000
15.600
3.500REF
3.600REF
41.100
24.950
20.450
7.20
5.450TYP
5.980REF
0.150
7
MAX
5.150
2.600
1.400
3.200
2.200
0.700
2.100
15.750
MIN
0.191
0.087
0.039
0.110
0.071
0.020
0.075
0.608
41.300
25.100
20.600
7.30
1.610
0.976
0.799
0.280
0.300
0.000
NOM
0.197
0.094
0.047
0.118
0.079
0.024
0.079
0.614
0.138REF
0.142REF
1.618
0.982
0.805
0.283
0.215TYP
0.235REF
0.006
MAX
0.203
0.102
0.055
0.126
0.087
0.028
0.083
0.620
1.626
0.988
0.811
0.287
0.012
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RU55200Q
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
8
www.ruichips.com