RU5H5P N-Channel Advanced Power MOSFET Features Pin Description • 500V/5A, RDS (ON) =1200mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Fast Switching • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D Applications • High efficiency switch mode power supplies • Lighting G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 5 A TC=25°C 20 A TC=25°C 5 TC=100°C 3.5 TC=25°C 25 TC=100°C 10 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient A W 5 °C/W 62.5 °C/W 180 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 1 www.ruichips.com RU5H5P Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU5H5P Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 500 V VDS=500V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±30V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=2.25A µA 30 2 3 1200 4 V ±100 nA 1500 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=4.5A, VGS=0V ISD=4.5A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 250 ns 2.4 µC Ω ⑤ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 4.7 Ciss Input Capacitance 560 Coss Output Capacitance VGS=0V, VDS=250V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Qg 20 VDD=250V, RL=55Ω, IDS=4.5A, VGEN=10V, RG=25Ω 35 ns 45 25 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 18 Turn-off Fall Time Gate Charge Characteristics pF 95 15 VDS=400V, VGS=10V, IDS=4.5A nC 3 6 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =6A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 2 www.ruichips.com ℃ RU5H5P Ordering and Marking Information Device Marking Package RU5H5P RU5H5P TO220F Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com ℃ RU5H5P Typical Characteristics Power Dissipation Drain Current 6 25 ID - Drain Current (A) PD - Power (W) 30 20 15 10 5 5 4 3 2 1 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 125 150 175 5000 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 100 Drain Current Safe Operation Area 10 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 10µs 100µs 1ms 10ms Ids=2.25A 4000 3000 1 2000 DC 0.1 1000 TC=25°C 0.01 0.1 1 10 0 100 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 10 1 0.1 Single Pulse RθJC=5°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 4 www.ruichips.com ℃ RU5H5P Typical Characteristics Output Characteristics 10 RDS(ON) - On Resistance (mΩ) 8V 10V ID - Drain Current (A) Drain-Source On Resistance 2500 8 2000 6V 6 10V 1500 5V 4 1000 2 500 3V 0 0 2 4 6 8 0 10 0 2 4 VDS - Drain-Source Voltage (V) 10 Source-Drain Diode Forward 10 VGS=10V ID=2.25A 2.0 IS - Source Current (A) Normalized On Resistance 8 ID - Drain Current (A) Drain-Source On Resistance 2.5 6 1.5 1.0 0.5 TJ=25°C Rds(on)=1200mΩ TJ=150°C 1 TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 Ciss 600 400 Coss Crss 1 10 1 1.2 1.4 Gate Charge 1000 0 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 200 0.6 100 1000 10 VDS=400V IDS=4.5A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 5 10 15 20 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 5 www.ruichips.com ℃ RU5H5P Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 6 www.ruichips.com ℃ RU5H5P Package Information TO220F F1 P1 H1 P DEP F4 P2 P3 DEP F1 G2 A1 F3 A E Q A2 F2 θ2 D C1 DEP D1 P1 P1 θ1 b1 L1 G3 L A4 b2 C e k1 E1 SYMBOL E A A1 A2 A4 c c1 D Q H1 e Φp L L1 D1 Φp1 MM MIN 9.96 4.50 2.34 0.95 2.65 15.67 8.80 6.48 12.78 3.25 8.99 1.40 NOM MAX 10.16 10.36 4.70 4.90 2.54 2.74 1.05 1.15 2.75 2.85 0.50 0.50 15.87 16.07 9.00 9.20 6.68 6.88 2.54BSC 3.183 12.98 13.18 3.45 3.65 9.19 9.39 1.50 1.60 Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 INCH MIN 0.392 0.177 0.092 0.037 0.104 0.617 0.346 0.255 0.503 0.128 0.354 0.055 NOM 0.400 0.185 0.100 0.041 0.108 0.020 0.020 0.625 0.354 0.263 0.100BSC 0.125 0.511 0.136 0.362 0.059 MAX 0.408 0.193 0.108 0.045 0.112 0.633 0.362 0.271 0.519 0.144 0.370 0.063 7 SYMBOL Φp2 Φp3 MM MIN 1.15 θ1 θ2 5° DEP F1 F2 F3 F4 G2 G3 b1 b2 E1 K1 0.05 1.90 13.61 3.20 5.25 6.90 1.10 1.17 0.77 9.80 0.65 NOM 1.20 3.450 7° 45° 0.10 2.00 13.81 3.30 5.40 7.00 1.30 1.21 0.80 10.00 0.70 INCH MAX 1.25 MIN 0.045 9° 5° 0.15 2.10 14.01 3.40 5.55 7.10 1.50 1.24 0.85 10.20 0.75 0.002 0.075 0.536 0.126 0.207 0.272 0.043 0.046 0.030 0.386 0.026 NOM 0.047 0.136 7° 45° 0.004 0.079 0.544 0.130 0.213 0.276 0.051 0.047 0.032 0.394 0.028 MAX 0.049 9° 0.006 0.083 0.552 0.134 0.219 0.280 0.059 0.049 0.033 0.402 0.030 www.ruichips.com ℃ RU5H5P Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 8 www.ruichips.com