RU80N15S N-Channel Advanced Power MOSFET Features Pin Description • 150V/80A, RDS (ON) =31mΩ(Typ.)@VGS=10V D • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available G S TO263 D Applications • Automotive applications and a wide variety of other applications • High Efficiency Synchronous in SMPS • High Speed Power Switching G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 150 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 80 A TC=25°C 300 A TC=25°C 80 TC=100°C 60 TC=25°C 176 TC=100°C 88 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 0.85 °C/W RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W 169 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 1 www.ruichips.com RU80N15S Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU80N15S Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 150 V VDS=150V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=40A µA 30 2 3 31 4 V ±100 nA 36 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time nC 1 Ω 3800 550 pF 18 VDD=35V, RL=35Ω, IDS=1A, VGEN=10V, RG=10Ω 32 ns 80 56 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 130 250 Turn-off Fall Time Gate Charge Characteristics Qg ns ⑤ RG tf 68 90 VDS=30V, VGS=10V, IDS=40A 25 nC 30 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by TJmax, IAS =26A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 2 www.ruichips.com ℃ RU80N15S Ordering and Marking Information Device Marking Package RU80N15S RU80N15S TO263 Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com ℃ RU80N15S Typical Characteristics Power Dissipation 200 180 80 ID - Drain Current (A) 160 PD - Power (W) Drain Current 90 70 140 60 120 50 100 40 80 30 60 20 40 10 20 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 10µs 100µs 1ms 10ms DC 1 0.1 0.01 TC=25°C 0.01 0.1 125 150 175 100 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Ids=40A 80 60 40 20 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 0.01 Single Pulse RθJC=0.85°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 4 www.ruichips.com ℃ RU80N15S Typical Characteristics Output Characteristics 70 60 8V RDS(ON) - On Resistance (mΩ) 10V ID - Drain Current (A) Drain-Source On Resistance 100 6V 50 40 5V 30 20 10 3V 0 0 1 2 3 4 80 60 10V 40 20 0 5 0 20 40 VDS - Drain-Source Voltage (V) 100 Source-Drain Diode Forward 100 VGS=10V ID=40A 2.0 IS - Source Current (A) Normalized On Resistance 80 ID - Drain Current (A) Drain-Source On Resistance 2.5 60 1.5 1.0 0.5 TJ=25°C Rds(on)=31mΩ TJ=175°C 10 TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 175 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 4000 Ciss 3000 2500 2000 1500 1000 Coss 500 Crss 0 1 10 1 1.2 1.4 Gate Charge 5000 3500 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 4500 0.6 100 1000 10 VDS=30V IDS=40A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 20 40 60 80 100 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 5 www.ruichips.com ℃ RU80N15S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 6 www.ruichips.com ℃ RU80N15S Package Information TO263 A E L3 c1 L2 θ1 A1 H D DEP A2 L1 θ1 b C L b1 θ2 e θ θ2 SYMBOL A A1 A2 b b1 c c1 D E e H MM MIN 4.40 0.00 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.55 0.10 2.69 * * * * 8.70 10.13 2.54BSC 15.10 INCH MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 15.50 Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 MIN 0.173 0.000 0.102 0.030 0.048 0.013 0.048 0.339 0.394 NOM 0.179 0.005 0.106 MAX 0.185 0.010 0.110 0.035 0.054 0.019 0.052 0.346 0.404 0.343 0.399 0.100BSC 0.579 0.594 0.610 7 SYMBOL L L3 L1 L4 L2 θ θ1 θ2 DEP Φp1 L4 MM MIN 2.00 1.17 * NOM 2.30 1.29 * 0.25 BSC 2.50 REF 0° * 5° 7° 1° 3° 0.05 0.10 1.40 1.50 INCH MAX 2.60 1.40 1.70 MIN 0.079 0.046 * 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 NOM 0.091 0.051 * 0.01 BSC 0.098 REF * 7° 3° 0.004 0.059 MAX 0.102 0.055 0.067 8° 9° 5° 0.008 0.063 www.ruichips.com ℃ RU80N15S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 8 www.ruichips.com