RU20P18L

RU20P18L
P-Channel Advanced Power MOSFET
Features
Pin Description
• -20V/-18A,
RDS (ON) =30mΩ(Typ.)@VGS=-4.5V
RDS (ON) =45mΩ(Typ.)@VGS=-2.5V
D
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
TO252
D
Applications
• Load Switch
• Power Management
G
S
P-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±12
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
-18
A
TC=25°C
-72
A
TC=25°C
-18
TC=100°C
-13
TC=25°C
30
TC=100°C
15
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=-10V)
IDP
ID
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
A
W
5
°C/W
100
°C/W
56
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
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RU20P18L
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU20P18L
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
Zero Gate Voltage Drain Current
-20
V
VDS=-16V, VGS=0V
-1
TJ=125°C
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±12V, VDS=0V
Drain-Source On-state Resistance
µA
-30
-0.4
-1
V
±100
nA
VGS=-4.5V, IDS=-9A
30
40
mΩ
VGS=-2.5V, IDS=-6A
45
60
mΩ
-1.2
V
Diode Characteristics
VSD
④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=-18A, VGS=0V
ISD=-9A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
13
ns
8
nC
Ω
⑤
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.1
Ciss
Input Capacitance
545
Coss
Output Capacitance
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
45
td(ON)
Turn-on Delay Time
7
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
11
ns
27
15
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=-10V,IDS=-9A,
VGEN=-4.5V,RG=6Ω
pF
90
7
VDS=-16V, VGS=-4.5V,
IDS=-9A
nC
1.4
2.5
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by TJmax, IAS =-15A, VDD =-16V, RG = 50Ω, Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
2
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RU20P18L
Ordering and Marking Information
Device
Marking
Package
RU20P18L
RU20P18L
TO252
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
Packaging Quantity Reel Size Tape width
Tape&Reel
3
2500
13''
16mm
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RU20P18L
Typical Characteristics
Power Dissipation
35
18
30
16
-ID - Drain Current (A)
PD - Power (W)
Drain Current
20
25
14
12
20
10
15
10
5
8
6
4
2
VGS=-4.5V
0
0
0
25
50
75
100
125
150
25
175
50
10µs
100µs
1ms
10ms
DC
1
0.1
0.01
TC=25°C
0.01
0.1
125
150
175
100
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
-ID - Drain Current (A)
10
100
Drain Current
Safe Operation Area
100
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Ids=-9A
80
60
40
20
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
-VGS - Gate-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
10
1
0.1
Single Pulse
RθJC=5°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
4
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RU20P18L
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
150
RDS(ON) - On Resistance (mΩ)
-ID - Drain Current (A)
50
40
120
-4.5V
-4V
30
-2.5V
20
10
-1V
0
0
1
2
3
4
90
-2.5V
60
30
-4.5V
0
5
0
10
20
-VDS - Drain-Source Voltage (V)
50
Source-Drain Diode Forward
100
VGS=-4.5V
IDS=-9A
2.0
-IS - Source Current (A)
Normalized On Resistance
40
-ID - Drain Current (A)
Drain-Source On Resistance
2.5
30
1.5
1.0
0.5
TJ=25°C
Rds(on)=30mΩ
10
TJ=175°C
0.1
0.0
0.2
-50
-25
0
25
50
75
100
125
150
0.4
Capacitance
-VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
800
Ciss
400
Coss
Crss
0
1
0.8
1
1.2
1.4
Gate Charge
1000
200
0.6
-VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
600
TJ=25°C
1
10
100
-VDS - Drain-Source Voltage (V)
10
VDS=-16V
IDS=-9A
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
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RU20P18L
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
6
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RU20P18L
Package Information
TO252
E
b3
L3
C
D1
θ1
H
D
A1
E1
θ1
θ
L
L4
L1
θ1
e
L2
b
A
θ2
MM
SYMBOL
A
A1
b
b3
c
D
D1
E
E1
e
H
L
L1
L2
L3
L4
θ
θ1
θ2
MIN
2.200
0.000
0.720
5.230
0.470
6.000
6.500
4.700
9.900
1.400
0.900
0.600
0°
5°
5°
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
INCH
NOM
2.290
0.785
5.345
0.525
6.100
5.30 REF
6.600
4.810
2.28 REF
10.100
1.550
2.743 REF
0.510 BSC
1.075
0.800
7°
7°
7
MAX
2.380
0.100
0.850
5.460
0.580
6.200
MIN
0.087
0.000
0.028
0.206
0.019
0.236
6.700
4.920
0.256
0.185
10.300
1.700
0.390
0.055
1.250
1.000
8°
9°
9°
0.035
0.024
0°
5°
5°
NOM
0.090
0.031
0.210
0.021
0.240
0.20 REF
0.260
0.189
0.09 REF
0.398
0.061
0.108 REF
0.020 BSC
0.042
0.031
7°
7°
MAX
0.094
0.004
0.033
0.215
0.023
0.244
0.264
0.194
0.406
0.067
0.049
0.039
8°
9°
9°
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RU20P18L
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
8
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