RU20P18L P-Channel Advanced Power MOSFET Features Pin Description • -20V/-18A, RDS (ON) =30mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-2.5V D • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications • Load Switch • Power Management G S P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C -18 A TC=25°C -72 A TC=25°C -18 TC=100°C -13 TC=25°C 30 TC=100°C 15 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=-10V) IDP ID PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient A W 5 °C/W 100 °C/W 56 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 1 www.ruichips.com RU20P18L Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU20P18L Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current -20 V VDS=-16V, VGS=0V -1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±12V, VDS=0V Drain-Source On-state Resistance µA -30 -0.4 -1 V ±100 nA VGS=-4.5V, IDS=-9A 30 40 mΩ VGS=-2.5V, IDS=-6A 45 60 mΩ -1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=-18A, VGS=0V ISD=-9A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 13 ns 8 nC Ω ⑤ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.1 Ciss Input Capacitance 545 Coss Output Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 45 td(ON) Turn-on Delay Time 7 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg 11 ns 27 15 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=-10V,IDS=-9A, VGEN=-4.5V,RG=6Ω pF 90 7 VDS=-16V, VGS=-4.5V, IDS=-9A nC 1.4 2.5 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =-15A, VDD =-16V, RG = 50Ω, Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 2 www.ruichips.com RU20P18L Ordering and Marking Information Device Marking Package RU20P18L RU20P18L TO252 Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 Packaging Quantity Reel Size Tape width Tape&Reel 3 2500 13'' 16mm www.ruichips.com RU20P18L Typical Characteristics Power Dissipation 35 18 30 16 -ID - Drain Current (A) PD - Power (W) Drain Current 20 25 14 12 20 10 15 10 5 8 6 4 2 VGS=-4.5V 0 0 0 25 50 75 100 125 150 25 175 50 10µs 100µs 1ms 10ms DC 1 0.1 0.01 TC=25°C 0.01 0.1 125 150 175 100 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited -ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Ids=-9A 80 60 40 20 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 10 1 0.1 Single Pulse RθJC=5°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 4 www.ruichips.com RU20P18L Typical Characteristics Output Characteristics Drain-Source On Resistance 150 RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 50 40 120 -4.5V -4V 30 -2.5V 20 10 -1V 0 0 1 2 3 4 90 -2.5V 60 30 -4.5V 0 5 0 10 20 -VDS - Drain-Source Voltage (V) 50 Source-Drain Diode Forward 100 VGS=-4.5V IDS=-9A 2.0 -IS - Source Current (A) Normalized On Resistance 40 -ID - Drain Current (A) Drain-Source On Resistance 2.5 30 1.5 1.0 0.5 TJ=25°C Rds(on)=30mΩ 10 TJ=175°C 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 Ciss 400 Coss Crss 0 1 0.8 1 1.2 1.4 Gate Charge 1000 200 0.6 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 600 TJ=25°C 1 10 100 -VDS - Drain-Source Voltage (V) 10 VDS=-16V IDS=-9A 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 5 www.ruichips.com RU20P18L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 6 www.ruichips.com RU20P18L Package Information TO252 E b3 L3 C D1 θ1 H D A1 E1 θ1 θ L L4 L1 θ1 e L2 b A θ2 MM SYMBOL A A1 b b3 c D D1 E E1 e H L L1 L2 L3 L4 θ θ1 θ2 MIN 2.200 0.000 0.720 5.230 0.470 6.000 6.500 4.700 9.900 1.400 0.900 0.600 0° 5° 5° Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 INCH NOM 2.290 0.785 5.345 0.525 6.100 5.30 REF 6.600 4.810 2.28 REF 10.100 1.550 2.743 REF 0.510 BSC 1.075 0.800 7° 7° 7 MAX 2.380 0.100 0.850 5.460 0.580 6.200 MIN 0.087 0.000 0.028 0.206 0.019 0.236 6.700 4.920 0.256 0.185 10.300 1.700 0.390 0.055 1.250 1.000 8° 9° 9° 0.035 0.024 0° 5° 5° NOM 0.090 0.031 0.210 0.021 0.240 0.20 REF 0.260 0.189 0.09 REF 0.398 0.061 0.108 REF 0.020 BSC 0.042 0.031 7° 7° MAX 0.094 0.004 0.033 0.215 0.023 0.244 0.264 0.194 0.406 0.067 0.049 0.039 8° 9° 9° www.ruichips.com RU20P18L Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 8 www.ruichips.com