RU1HP55R

RU1HP55R
P-Channel Advanced Power MOSFET
Features
Pin Description
• -100V/-55A,
RDS (ON) =40mΩ(Typ.)@VGS=-10V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO220
D
Applications
pp
•Inverters
G
S
P Channel MOSFET
P-Channel
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
g
-100
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
-55
A
TC=25°C
-220
A
TC=25°C
-55
TC=100°C
-39
TC=25°C
176
TC=100°C
88
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
ID
②
Continuous Drain Current(VGS=-10V)
PD
Maximum Power Dissipation
IDP
A
W
RJC
Thermal Resistance-Junction to Case
0.85
°C/W
RJA
Thermal Resistance-Junction to Ambient
62.5
°C/W
400
mJ
Drain-Source Avalanche Ratings
③
EAS
Avalanche
a a c e Energy,
e gy, S
Single
g e Pulsed
u sed
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
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RU1HP55R
Electrical
El t i l Characteristics
Ch
t i ti (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1HP55R
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
Zero Gate Voltage Drain Current
VGS(th)
IGSS
④
RDS(ON)
-100
V
VDS=-100V,
100V VGS=0V
0V
-1
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance VGS=-10V, IDS=-55A
-30
-2
µA
-4
V
±100
nA
50
mΩ
-1.2
V
40
Diode Characteristics
④
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=-55A, VGS=0V
ISD=-55A, dlSD/dt=100A/µs
150
ns
500
nC
1.5
Ω
⑤
Dynamic
Characteristics
y
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=-50V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
210
td(ON)
Turn-on Delay Time
25
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
pF
535
87
ns
139
38
⑤
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=-50V,IDS=-55A,
VGEN=-10V,RG=6Ω
3600
VDS=-80V, VGS=-10V,
IDS=-55A
155
nC
31
48
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by TJmax, IAS =-40A,
40A, VDD =-60V,
60V, RG = 50Ω, Starting TJ = 25
25°C.
C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
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RU1HP55R
Ordering
O d i and
d Marking
M ki Information
I f
ti
Device
Marking
Package
RU1HP55R
RU1HP55R
TO220
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
Packaging Quantity Reel Size Tape width
Tube
3
50
-
-
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RU1HP55R
Typical
Characteristics
T i l Ch
t i ti
Power Dissipation
200
Drain Current
60
180
50
-ID - Drain Curre
ent (A)
PD - Powe
er (W)
160
140
40
120
30
100
80
20
60
40
10
20
0
0
0
25
50
75
100
125
150
VGS=-10V
25
175
50
TJ - Junction Temperature (°C)
75
100
125
Safe Operation Area
RDS(ON) - On - Resistan
nce (mΩ)
RDS(ON) limiited
-IID - Drain Current (A
A)
10
10µs
100µs
1ms
10ms
DC
1
Ids=-55A
200
150
100
0.1
0.01
175
Drain Current
300
250
100
150
TJ - Junction Temperature (°C)
TC=25°C
0.01
0.1
1
10
50
0
0
100
1
2
3
4
5
6
7
8
9
10
-VGS - Gate-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
ZthJC - Therrmal Response (°C/W
W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
RθJC=0.85°C/W
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
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RU1HP55R
Typical
Characteristics
T i l Ch
t i ti
Output Characteristics
-10V
-8V
40
120
-6V
30
-4V
20
10
-3V
0
0
1
Drain-Source On Resistance
150
RDS(ON) - On Resista
ance (mΩ)
-ID - Drain Cu
urrent (A)
50
2
3
4
90
60
-10V
30
0
5
0
20
40
-VDS - Drain-Source Voltage (V)
2.0
Drain-Source On Resistance
1.5
1.0
TJ=25°C
( )
Rds(on)=40mΩ
-25
0
25
50
75
100
125
TJ=175°C
10
TJ=25°C
1
0.1
0.0
-50
0.2
150
0.4
Capacitance
-VGS - G
Gate-Source Voltage
e (V)
C - Capacitance (pF
F)
Frequency=1 0MHz
Frequency=1.0MHz
4000
Ciss
2000
Coss
Crss
0
1
10
100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
0.8
1
1.2
1.4
Gate Charge
5000
1000
0.6
-VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
3000
100
Source-Drain Diode Forward
100
VGS=-10V
ID=-55A
0.5
80
-ID - Drain Current (A)
-IS - Source Currentt (A)
No
ormalized On Resisttance
2.5
60
5
10
VDS 80V
VDS=-80V
IDS=-55A
9
8
7
6
5
4
3
2
1
0
0
50
100
150
200
QG - Gate Charge (nC)
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RU1HP55R
Avalanche
A l
h Test
T t Circuit
Ci
it and
d Waveforms
W
f
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
6
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RU1HP55R
Package
Information
P k
I f
ti
TO220
E
A
E1
p
A1
Q
H1
1
θ
1
P
2
L
D
DEP
D1
2
L1
θ
1
θ
2
b
L
b
C
A2
e
e1
E2
SYMBOL
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
E2
MM
MIN
4.40
1.20
2.23
0.75
1.17
0.40
15.40
8.96
0.05
9.66
*
9.80
NOM
4.55
1.30
2.38
0.80
1.28
0.50
15.60
9.21
0.13
9.97
8.70
10.00
INCH
MAX
4.70
1.40
2.53
0.85
1.39
0.60
15.80
9.46
0.20
10.28
*
10.20
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
MIN
0.173
0.047
0.088
0.030
0.046
0.016
0.606
0.353
0.002
0.380
*
0.386
NOM
0.179
0.051
0.094
0.031
0.050
0.020
0.614
0.363
0.005
0.393
0.343
0.394
MAX
0.185
0.055
0.100
0.033
0.055
0.024
0.622
0.372
0.008
0.405
*
0.402
7
SYMBOL
Φp1
e
e1
H1
L
L1
L2
Φp
Q
θ1
θ2
MM
MIN
1.40
6.40
12.70
*
3.50
2.73
5°
1°
NOM
1.50
2.54 BSC
5.08 BSC
6.50
13.18
*
2.50 REF
3.60
2.80
7°
3°
INCH
MAX
1.60
MIN
0.055
6.60
13.65
3.95
0.252
0.500
*
3.70
2.87
9°
5°
0.138
0.107
5°
1°
NOM
0.059
0.10 BSC
0.20 BSC
0.256
0.519
*
0.098 REF
0.142
0.110
7°
3°
MAX
0.063
0.260
0.537
0.156
0.146
0.113
9°
5°
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RU1HP55R
Customer
Service
C t
S
i
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
@
p
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
8
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