RU60450Q N-Channel Advanced Power MOSFET Features Pin Description • 60V/450A, RDS (ON) =1.3mΩ(Typ.)@VGS=10V • Ultra Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications •Switching Application Systems • Inverter Systems i G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 450 A TC=25°C 1800 A TC=25°C 450 TC=100°C 318 TC=25°C 600 TC=100°C 300 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient A W 0.25 °C/W 50 °C/W 1406 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 1 www.ruichips.com RU60450Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU60450Q Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 60 V VDS=60V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=75A µA 30 2 3 1.3 4 V ±100 nA 1.8 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=75A, VGS=0V ISD=75A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time nC 1.2 Ω 12100 1450 pF 45 VDD=30V, RL=0.3Ω, IDS=75A, VGEN=10V, RG=2.5Ω 230 ns 160 230 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 430 620 Turn-off Fall Time Gate Charge Characteristics Qg ns ⑤ RG tf 165 415 VDS=48V, VGS=10V, IDS=75A 81 nC 113 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 90A. ③Limited by TJmax, IAS =75A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 2 www.ruichips.com RU60450Q Ordering and Marking Information Device Marking Package RU60450Q RU60450Q TO247 Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 Packaging Quantity Reel Size Tape width Tube 3 30 - - www.ruichips.com RU60450Q Typical Characteristics Drain Current Power Dissipation 700 600 550 600 ID - Drain Current (A) PD - Power (W) 500 450 500 400 400 350 300 300 250 200 200 Limited By Package 150 100 100 50 0 VGS=10V 0 0 25 50 75 100 125 150 175 25 50 100 10µs 100µs 1ms 10ms DC 10 1 0.1 TC=25°C 0.01 0.1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 1000 100 125 150 175 Drain Current Safe Operation Area 10000 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 10 9 Ids=75A 8 7 6 5 4 3 2 1 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 1 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 0.1 0.01 Single Pulse 0.001 RθJC=0.25°C/W 0.0001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 4 www.ruichips.com RU60450Q Typical Characteristics Output Characteristics 500 Drain-Source On Resistance 5 ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) 8,9,10V 450 6V 400 350 5V 300 250 200 4V 150 100 3V 50 0 0 1 2 3 4 4 3 2 Vgs=10 V 1 0 5 0 50 100 VDS - Drain-Source Voltage (V) 250 300 350 400 Source-Drain Diode Forward 100 VGS=10V ID=75A 2.0 IS - Source Current (A) Normalized On Resistance 200 ID - Drain Current (A) Drain-Source On Resistance 2.5 150 1.5 1.0 0.5 TJ=25°C Rds(on)=1.3mΩ TJ=175°C 10 TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 175 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 10000 Ciss 7500 5000 Coss Crs s 0 1 1 1.2 1.4 Gate Charge 15000 2500 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 12500 0.6 10 100 10 VDS=48V IDS=75A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 100 200 300 400 500 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 5 www.ruichips.com RU60450Q Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 6 www.ruichips.com RU60450Q Package Information TO247 A C1 H 顶杆孔深h E2 L L1 L2 E1 A1 b1 b2 e b c D SYMBOL A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H h MM MIN 4.850 2.200 1.000 2.800 1.800 0.500 1.900 15.450 40.900 24.800 20.300 7.10 0.000 Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 INCH NOM 5.000 2.400 1.200 3.000 2.000 0.600 2.000 15.600 3.500REF 3.600REF 41.100 24.950 20.450 7.20 5.450TYP 5.980REF 0.150 7 MAX 5.150 2.600 1.400 3.200 2.200 0.700 2.100 15.750 MIN 0.191 0.087 0.039 0.110 0.071 0.020 0.075 0.608 41.300 25.100 20.600 7.30 1.610 0.976 0.799 0.280 0.300 0.000 NOM 0.197 0.094 0.047 0.118 0.079 0.024 0.079 0.614 0.138REF 0.142REF 1.618 0.982 0.805 0.283 0.215TYP 0.235REF 0.006 MAX 0.203 0.102 0.055 0.126 0.087 0.028 0.083 0.620 1.626 0.988 0.811 0.287 0.012 www.ruichips.com RU60450Q Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 8 www.ruichips.com