RU6099S N-Channel Advanced Power MOSFET Features Pin Description • 60V/120A, RDS (ON) =6m(Typ.) @VGS=10V D • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available G S TO263 D Applications • Switching Application Systems • Inverter Systems G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 120 A TC=25°C 380 A TC=25°C 120 TC=100°C 90 TC=25°C 150 TC=100°C 75 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient A W 1 °C/W 62.5 °C/W 625 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 1 www.ruichips.com RU6099S Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU6099S Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 60 V VDS=60V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=40A µA 30 2 3 6 4 V ±100 nA 7 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time nC 1.3 Ω 3000 430 pF 14 VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=8Ω 17 ns 40 62 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 95 240 Turn-off Fall Time Gate Charge Characteristics Qg ns ⑤ RG tf 50 72 VDS=30V, VGS=10V, IDS=40A 13 nC 24 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by TJmax, IAS =27A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 2 www.ruichips.com RU6099S Ordering and Marking Information Device Marking Package RU6099S RU6099S TO263 Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com RU6099S Typical Characteristics Power Dissipation 160 140 120 ID - Drain Current (A) PD - Power (W) Drain Current 140 120 100 100 80 80 60 60 40 40 20 20 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 10 10µs 100µs 1ms 10ms DC 1 0.1 TC=25°C 0.01 0.1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 100 100 125 150 175 Drain Current Safe Operation Area 1000 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 20 Ids=40A 15 10 5 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 0.01 Single Pulse RθJC=1°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 4 www.ruichips.com RU6099S Typical Characteristics Output Characteristics Drain-Source On Resistance 20 Vgs=8,9,10 V 80 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 100 6V 60 5V 40 20 3V 0 0 1 2 3 4 15 10 10V 5 0 5 0 20 40 VDS - Drain-Source Voltage (V) 100 Source-Drain Diode Forward 100 VGS=10V IDS=40A 2.0 IS - Source Current (A) Normalized On Resistance 80 ID - Drain Current (A) Drain-Source On Resistance 2.5 60 1.5 1.0 0.5 TJ=25°C Rds(on)=6mΩ TJ=175°C 10 TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 175 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 3000 Ciss 2500 2000 1500 1000 Coss 500 Crss 1 1 1.2 1.4 Gate Charge 4000 0 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 3500 0.6 10 100 10 VDS=30V IDS=40A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 20 40 60 80 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 5 www.ruichips.com RU6099S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 6 www.ruichips.com RU6099S Package Information TO263 A E L3 c1 L2 θ1 A1 H D DEP A2 L1 θ1 b C L b1 θ2 e θ θ2 SYMBOL A A1 A2 b b1 c c1 D E e H MM MIN 4.40 0.00 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.55 0.10 2.69 * * * * 8.70 10.13 2.54BSC 15.10 INCH MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 15.50 Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 MIN 0.173 0.000 0.102 0.030 0.048 0.013 0.048 0.339 0.394 NOM 0.179 0.005 0.106 MAX 0.185 0.010 0.110 0.035 0.054 0.019 0.052 0.346 0.404 0.343 0.399 0.100BSC 0.579 0.594 0.610 7 SYMBOL L L3 L1 L4 L2 θ θ1 θ2 DEP Φp1 L4 MM MIN 2.00 1.17 * NOM 2.30 1.29 * 0.25 BSC 2.50 REF 0° * 5° 7° 1° 3° 0.05 0.10 1.40 1.50 INCH MAX 2.60 1.40 1.70 MIN 0.079 0.046 * 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 NOM 0.091 0.051 * 0.01 BSC 0.098 REF * 7° 3° 0.004 0.059 MAX 0.102 0.055 0.067 8° 9° 5° 0.008 0.063 www.ruichips.com RU6099S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 8 www.ruichips.com