RU60E5D N-Channel Advanced Power MOSFET Features Pin Description • 60V/5A, RDS (ON) =58mΩ (Type) @ VGS=10V RDS (ON) =70mΩ (Type) @ VGS=4.5V • ESD Protected • Reliable and Rugged SOT-223 • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Available Applications • Power Management • DC-DC Converter • Motor Control N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 5 A TC=25°C 20 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation ② RθJA Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 TC=25°C V ① TC=70°C 5 4 TC=25°C 2.5 TC=70°C 1.6 50 A W °C/W www.ruichips.com RU60E5D Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ③ Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=-250µA RU60E5D Min. Typ. 1 TJ=85°C VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±16V, VDS=0V 30 1.5 Unit V 60 VDS= 60V, VGS=0V Gate Threshold Voltage Max. 2 µA 2.7 V ±10 uA VGS= 10V, IDS=5A 58 70 mΩ VGS= 4.5V, IDS=3.5A 70 95 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics ③ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=2.5A, VGS=0V 42 ns 77 nC VGS=0V,VDS=0V,F=1MHz 0.7 Ω VGS=0V, VDS= 30V, Frequency=1.0MHz 460 ISD=2.5A, dlSD/dt=100A/µs Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Qg VDD=30V, RL=30Ω, IDS=2.5A, VGEN= 10V, RG=25Ω 4 ns 12 5 ④ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 24 3 Turn-off Fall Time Gate Charge Characteristics pF 44 16 VDS=48V, VGS= 10V, IDS=2.5A 3 20 nC 5 ①Current limited by maximum junction temperature. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 2 www.ruichips.com RU60E5D Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU60E5D Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 Tj - Junction Temperature (°C) 4 www.ruichips.com RU60E5D Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 QG - Gate Charge (nC) 5 www.ruichips.com RU60E5D Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU60E5D RU60E5D SOT-223 Tape&Reel 2500 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 6 www.ruichips.com RU60E5D Package Information SOT-223 SYMBOL MM INCH MIN MAX MIN MAX MM SYMBOL INCH MIN MAX MIN MAX A 1.520 1.800 0.060 0.071 E 3.300 3.700 0.130 0.146 A1 0.000 0.100 0.000 0.004 E1 6.830 7.070 0.269 0.278 A2 1.500 1.700 0.059 0.067 e b 0.660 0.820 0.026 0.032 e1 4.500 4.700 0.177 0.185 c 0.250 0.350 0.010 0.014 L 0.900 1.150 0.035 0.045 θ 0° 10° 0° 10° D 6.200 6.400 0.244 0.252 D1 2.900 3.100 0.114 0.122 2.300(BSC) 0.091(BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 7 www.ruichips.com RU60E5D Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. C – AUG., 2013 8 www.ruichips.com