2SA2072 Transistors High voltage discharge, High speed switching, Low Noise (−60V, −3A) 2SA2072 zExternal dimensions (Unit : mm) 6.5 5.1 CPT3 (SC-63) <SOT-428> 2.3 2.5 0.65 0.9 (2) Collector (1) 2.3 (2) (3) 2.3 (3) Emitter 0.8Min. 0.75 (1) Base zApplications High speed switching, Low noise 9.5 1.5 5.5 1.5 0.5 0.9 zFeatures 1) High speed switching. ( Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically. (Typ. : −200mV at IC = −2.0A, IB = −200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC5825. 0.5 1.0 Abbreviated symbol : A2072 zStructure PNP silicon epitaxial planar transistor zPackaging specifications Package Type Taping TL Code Basic ordering unit (pieces) 2500 2SA2072 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V VEBO −6 V DC IC −3 A Pulsed ICP −6 A 1.0 W 10.0 W Emitter-base voltage Collector current Power dissipation PC Junction temperature Tj 150 °C Tstg −55 to 150 °C Range of storage temperature ∗1 ∗2 ∗3 ∗1 Pw=100ms ∗2 Ta=25°C ∗3 Tc=25°C 1/4 2SA2072 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V µA µA Collector-emitter saturation voltage VCE (sat) − −200 −500 mV hFE 120 − 270 − fT − 180 − MHz Collector output capacitance Cob − 50 − pF Turn-on time Storage time Fall time ton tstg tf − − − 20 150 20 − − − ns ns ns DC current gain Transistor frequency Condition IC = −1mA IC = −100µA IE = −100µA VCB = −20V VEB = −4V IC = −2A IB = −0.2A VCE = −2V IC = −100mA VCE = −10V IE =100mA f =10MHz VCB = −10V IE =0mA f =1MHz IC = −3A IB1 = −300mA IB2 =300mA VCC −25V ∗1 ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See switching characteristics measurement circuits zhFE RANK Q 120−270 2/4 2SA2072 Transistors zElectrical characteristics curves 200 10 700µA 600µA 500µA 80 400µA 300µA 200µA 40 100µA 0µA 0 0 1 2 3 4 5 100ms Tstg 1 Tf DC SW (ns) COLLECTOR CURRENT : IC (A) 0.1 0.01 0.001 0.1 1 10 0.1 1 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) IC (A) Fig.1 Typical output characteristics Fig.2 Safe operating area Fig.3 Switching Time 1000 VCE=2V Ta=25°C DC CURRENT GAIN : hFE 125°C 25°C −40°C 10 1 0.001 0.01 0.1 1 VCE=5V VCE=3V 100 VCE=2V 10 1 0.001 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs.collector current ( Ι ) Fig.5 DC current gain vs.collector current ( ΙΙ ) 1 Ta=25°C Ic/Ib=20/1 0.1 Ic/Ib=10/1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs.collector current ( ΙΙ ) 10 −40°C 25°C 125°C 0.1 0.001 0.01 0.1 1 IC/Ib=10/1 125°C 25°C 0.1 −40°C 0.01 0.001 0.01 0.1 1 10 Fig.6 Collector-emitter saturation voltage vs.collector current ( Ι ) 1000 IC/Ib=10/1 1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) 100 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) DC CURRENT GAIN : hFE 10 0.01 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Ton 100 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR CURRENT : IC (mA) 800µA 120 Ta=25°C VCC=25V IC/IB=10/1 100µs 900µA 160 1000 10ms 1ms IB=1000µA 10 Ta=25°C VCE=10V 100 10 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) Fig.8 Base-emitter saturation voltage vs. collector current Fig.9 Transition frequency 10 3/4 2SA2072 1000 100 10 1 0.1 10 Ta=25°C f=1MHz COLLECTOR CURRENT : IC(A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Transistors 1 25°C 125°C 10 −40°C 0.1 0.01 1 VCE=2V 100 0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 COLLECTOR TO BASE VOLTAGE : VCB (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.10 Collector output capacitance Fig.11 Grounded emitter propagation characteristics zSwitching characteristics measurement circuits RL=8.3Ω IC IB1 VIN PW VCC −25V IB2 PW 50µs DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM Ton Tstg Tf 90% COLLECTOR CURRENT WAVEFORM IC 10% 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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