ROHM 2SA2072

2SA2072
Transistors
High voltage discharge, High speed switching,
Low Noise (−60V, −3A)
2SA2072
zExternal dimensions (Unit : mm)
6.5
5.1
CPT3
(SC-63)
<SOT-428>
2.3
2.5
0.65
0.9
(2) Collector
(1)
2.3
(2)
(3)
2.3
(3) Emitter
0.8Min.
0.75
(1) Base
zApplications
High speed switching, Low noise
9.5
1.5
5.5
1.5
0.5
0.9
zFeatures
1) High speed switching. ( Tf : Typ. : 20ns at IC = −3A)
2) Low saturation voltage, typically.
(Typ. : −200mV at IC = −2.0A, IB = −200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SC5825.
0.5
1.0
Abbreviated symbol : A2072
zStructure
PNP silicon epitaxial planar transistor
zPackaging specifications
Package
Type
Taping
TL
Code
Basic ordering unit (pieces)
2500
2SA2072
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
VEBO
−6
V
DC
IC
−3
A
Pulsed
ICP
−6
A
1.0
W
10.0
W
Emitter-base voltage
Collector current
Power dissipation
PC
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Range of storage temperature
∗1
∗2
∗3
∗1 Pw=100ms
∗2 Ta=25°C
∗3 Tc=25°C
1/4
2SA2072
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
−60
−60
−6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
−1.0
−1.0
Unit
V
V
V
µA
µA
Collector-emitter saturation voltage
VCE (sat)
−
−200
−500
mV
hFE
120
−
270
−
fT
−
180
−
MHz
Collector output capacitance
Cob
−
50
−
pF
Turn-on time
Storage time
Fall time
ton
tstg
tf
−
−
−
20
150
20
−
−
−
ns
ns
ns
DC current gain
Transistor frequency
Condition
IC = −1mA
IC = −100µA
IE = −100µA
VCB = −20V
VEB = −4V
IC = −2A
IB = −0.2A
VCE = −2V
IC = −100mA
VCE = −10V
IE =100mA
f =10MHz
VCB = −10V
IE =0mA
f =1MHz
IC = −3A
IB1 = −300mA
IB2 =300mA
VCC −25V
∗1
∗1
∗2
∗1 Non repetitive pulse
∗2 See switching characteristics measurement circuits
zhFE RANK
Q
120−270
2/4
2SA2072
Transistors
zElectrical characteristics curves
200
10
700µA
600µA
500µA
80
400µA
300µA
200µA
40
100µA
0µA
0
0
1
2
3
4
5
100ms
Tstg
1
Tf
DC
SW (ns)
COLLECTOR CURRENT : IC (A)
0.1
0.01
0.001
0.1
1
10
0.1
1
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
IC (A)
Fig.1 Typical output characteristics
Fig.2 Safe operating area
Fig.3 Switching Time
1000
VCE=2V
Ta=25°C
DC CURRENT GAIN : hFE
125°C
25°C
−40°C
10
1
0.001
0.01
0.1
1
VCE=5V
VCE=3V
100
VCE=2V
10
1
0.001
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs.collector current ( Ι )
Fig.5 DC current gain
vs.collector current ( ΙΙ )
1
Ta=25°C
Ic/Ib=20/1
0.1
Ic/Ib=10/1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation voltage
vs.collector current ( ΙΙ )
10
−40°C
25°C
125°C
0.1
0.001
0.01
0.1
1
IC/Ib=10/1
125°C
25°C
0.1
−40°C
0.01
0.001
0.01
0.1
1
10
Fig.6 Collector-emitter saturation voltage
vs.collector current ( Ι )
1000
IC/Ib=10/1
1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
TRANSITION FREQUENCY : fT (MHz)
100
BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)
DC CURRENT GAIN : hFE
10
0.01
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Ton
100
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
COLLECTOR CURRENT : IC (mA)
800µA
120
Ta=25°C
VCC=25V
IC/IB=10/1
100µs
900µA
160
1000
10ms 1ms
IB=1000µA
10
Ta=25°C
VCE=10V
100
10
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
EMITTER CURRENT : IE (A)
Fig.8 Base-emitter saturation voltage
vs. collector current
Fig.9 Transition frequency
10
3/4
2SA2072
1000
100
10
1
0.1
10
Ta=25°C
f=1MHz
COLLECTOR CURRENT : IC(A)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Transistors
1
25°C
125°C
10
−40°C
0.1
0.01
1
VCE=2V
100
0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.10 Collector output capacitance
Fig.11 Grounded emitter propagation
characteristics
zSwitching characteristics measurement circuits
RL=8.3Ω
IC
IB1
VIN
PW
VCC −25V
IB2
PW 50µs
DUTY CYCLE 1%
IB2
IB1
BASE CURRENT
WAVEFORM
Ton
Tstg
Tf
90%
COLLECTOR CURRENT
WAVEFORM
IC
10%
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1