2SC5824 Transistor Power transistor (60V, 3A) 2SC5824 zExternal dimensions (Unit : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) zApplications NPN Silicon epitaxial planar transistor 0.4 1.5 0.4 (3) 1.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. Each lead has same dimensions Abbreviated symbol : UP zStructure Low frequency amplifier High speed switching zPackaging specifications Package Type Taping Code T100 Basic ordering unit (pieces) 1000 2SC5824 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC 3 A ICP 6 A PC 500 mW PC 2.0 W Tj 150 °C Tstg −55~+150 °C Power dissipation Junction temperature Range of storage temperature ∗1 ∗2 ∗3 ∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate Rev.A 1/3 2SC5824 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Conditions Unit BVCBO 60 − − V IC=100µA Collector−emitter breakdown voltage BVCEO 60 − − V IC=1mA BVEBO 6 − − V IE=100µA Collector cut-off current ICBO − − 1.0 µA VCB=40V Emitter cut-off current IEBO − − 1.0 µA VEB=4V VCE(sat) − 200 500 mV IC=2A, IB=200mA DC current gain hFE 120 − 390 − Transition frequency fT − 200 − MHz Collector output capacitance Cob − 20 − pF VCB=10V, IE=0mA, f=1MHz Turn-on time Ton − 50 − ns Storage time Tstg − 150 − ns Fall time Tf − 30 − ns IC=3A, IB1=300mA IB2= −300mA VCC 25V ∗2 Collector−base breakdown voltage Emitter−base breakdown voltage Collector−emitter staturation voltage ∗1 VCE=2V, IC=100mA VCE=10V, IE= −100mA, f=10MHz ∗1 ∗1 Non repetitive pulse ∗2 See switching charactaristics measurement circuits zhFE RANK Q R 120-270 180-390 zElectrical characteristic curves 10 1000 1000 Tstg 10ms DC 0.1 0.01 100 DC CURRENT GAIN : hFE 1 SWITCHING TIME (ns) COLLECTOR CURRENT : IC (A) 100ms VCE=2V Ta=25°C VCC=25V IC/IB=10/1 1ms Ton Tf 100 Ta= −40°C Ta=25°C Ta=100°C 10 Ta=125°C Single non repoetitive pulse 0.001 0.1 1 10 10 0.01 100 0.1 1 1000 VCE=2V Ta=25°C Ta=125°C 1 Ta=100°C 0.1 Ta=25°C Ta= −40°C 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current 10 0.01 0.001 10 10 COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE VCE=3V 0.01 1 IC/IB=10/1 VCE=5V 10 0.1 Fig.3 DC current gain vs. collector current 10 Ta=25°C 100 0.01 COLLECTOR CURRENT : IC (A) Fig.2 Switching Time Fig.1 Safe operating area 1 0.001 1 0.001 10 COLLECTOR CURRENT : IC (A) COLLECTOR EMITTER VOLTAGE : VCE (V) 0.01 0.1 1 COLLECTOR CURRENT : IC (A) 10 1 0.1 0.01 0.001 IC/IB=20/1 IC/IB=10/1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current vs. Collector Current Rev.A 2/3 2SC5824 Transistor 1000 1000 VCE=2V Ta= −40°C Ta=25°C 1 Ta=125°C Ta= −40°C 100 Ta=25°C Ta=100°C 10 Ta=125°C Ta=100°C 0.1 0.001 COLLECTOR OUTPUT CAPACITANCE : CoB (pF) DC CURRENT GAIN : hFE BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) IC/IB=10/1 0.01 0.1 1 1 0.001 10 0.01 0.1 1 10 TRANSITION FREQUENCY : FT (MHz) 10 Ta=25°C VCE=10V 100 10 1 −0.001 −0.01 −0.1 −1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage vs. collector current Fig.3 DC current gain vs. collector current Fig.9 Transition frequency −10 100 Ta=25°C f=1MHz 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector output capacitance zSwitching characteristics measurement circuits RL=8.3Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1