ROHM EML4

EML4 / UML4N
Transistors
General purpose transistor
(isolated transistor and diode)
EML4 / UML4N
2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package.
zDimensions (Unit : mm)
zApplications
DC / DC converter
Motor driver
EMT5
1.6
0.5
1.0
0.5 0.5
zFeatures
1) Tr : Low VCE(sat)
Di : Low VF
2) Small package
(5) (4)
1.6
1.2
1pin mark
(1) (2) (3)
zStructure
PNP Silicon epitaxial planar transistor
Schottky barrier diode
The following characteristics apply to both Di1 and Tr2.
0.13
0.22
Each lead has same dimensions
Abbreviated symbol : L4
ROHM : EMT5
UMT5
2.0
1.3
zEquivalent circuit
0.9
0.65 0.65
0.7
(4)
0.2
0.15
0.1Min.
(1) (2) (3)
1pin mark
Di1
2.1
1.25
(5) (4)
(5)
Tr2
Each lead has same dimensions
(1)
(2)
(3)
Abbreviated symbol : L4
ROHM : UMT5
EIAJ : SC-88A
zPackaging specifications
Type
EML4
UML4N
Package
EMT5
UMT5
Marking
Code
L4
L4
T2R
TR
Basic ordering unit(pieces)
8000
3000
Rev.C
1/4
EML4 / UML4N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Symbol
IO
Average rectified forward current
IFSM
Forward current surge peak (60HZ, 1∞)
VR
Reverse voltage (DC)
Tj
Junction temperature
Limits
200
1
30
125
Unit
mA
A
V
°C
Limits
−15
−12
−6
−500
−1
120
150
Unit
V
V
V
mA
A
mW
°C
Tr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
∗
∗ Each terminal mounted on a recommended.
Di1 / DTr2
Parameter
Power dissipation
Storage temperature
Symbol
Pd
Tstg
Limits
150
−55 to +125
Unit
mW
°C
∗
∗ Each terminal mounted on a recommended.
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Forward voltage
Reverse current
Symbol
Min.
Typ.
Max.
Unit
VF
IR
−
−
0.40
4.0
0.50
30
V
µA
Conditions
IF=200mA
VR=10V
Tr2
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−12
−15
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−1mA
IC=−10µA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−200mA, IB=−10mA
VCE=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
VCB=−10V, IE=0mA, f=1MHz
Rev.C
2/4
EML4 / UML4N
Transistors
zElectrical characteristic curves
Di1
Ta=125℃
10 Ta=75℃
1
Ta=-25℃
0.1
Ta=25℃
0.01
Ta=75℃
1000
100
Ta=25℃
10
10
Ta=-25℃
1
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10000
Ta=125℃
100
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
100
100000
1000
0.1
0.01
0.001
0
100
200
300
400
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
500
10
20
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
1
30
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
0.4
DC CURRENT GAIN : hFE
C
C
0.6
0.8
Ta=25°C
1.0
1.2
Ta=−40°C
100
10
1
1.4
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
Fig.3 Grounded emitter propagation
characteristics
Fig.4 DC current gain vs.
10000
IC/IB=20
Pulsed
Ta=125°C
100
Ta=25°C
Ta=−40°C
10
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
BASER SATURATION VOLTAGE : VBE (sat) (mV)
1000
Ta=25°C
Ta=−40°C
Ta=125°C
100
10
1
10
Ta=25°C
Pulsed
100
IC/IB=50
IC/IB=20
IC/IB=10
10
1
1
10
100
100
1000
1000
VCE=2V
Ta=25°C
Pulsed
100
10
1
1
10
100
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.7 Base-emitter saturation voltage
Fig.8 Gain bandwidth product
vs. collector current
1000
COLLECTOR CURRENT : IC (mA)
vs. collector current ( Ι )
IC/IB=20
Pulsed
1000
1000
Fig.5 Collector-emitter saturation voltage
collector current
TRANSITION FREQUENCY : fT (MHz)
0.2
Ta= −40°
5°C
0
Ta=25°
10
VCE=2V
Pulsed
Ta=125°C
100
1
COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV)
1000
VCE=2V
Pulsed
Ta=12
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Tr2
1000
vs. emitter current
Rev.C
2/4
EML4 / UML4N
1000
IE=0A
f=1MHz
Ta=25°C
100
Cib
10
Cob
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.9 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
10
TRANSITION FREQUENCY : IC (A)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Transistors
Ta=25°C
Single Pulsed
1
10ms
100ms
1ms
DC
0.1
0.01
0.001
0.01
0.1
1
10
100
EMITTER CURRENT : VCE (V)
Fig.10 Safe operation area
Rev.C
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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More detail product informations and catalogs are available, please contact your nearest sales office.
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Copyright © 2008 ROHM CO.,LTD.
THE AMERICAS / EUROPE / ASIA / JAPAN
Contact us : [email protected] rohm.co. jp
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Appendix1-Rev2.0