QSZ2 : Transistors

General purpose transistor
QSZ2
A 2SB1695 and a 2SD2657 are housed independently in a TSMT5 package.
Structure
Silicon epitaxial planar transistor
Dimensions (Unit : mm)
QSZ2
SOT-25T
(5)
(1)
0.3∼0.6
ROHM : TSMT5
0.85
0∼0.1
Applications
DC / DC converter
Motor driver
0.7
0.16
(3)
(4)
(2)
0.4
Features
1) Low VCE(sat)
2) Small package
0.95 0.95
1.9
2.9
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : Z02
Packaging specifications
Type
QSZ2
Package
TSMT5
Marking
Z02
Code
TR
Basic ordering unit(pieces)
3000
Equivalent circuit
(5)
(4)
Tr1
(1)
Tr2
(2)
(3)
Absolute maximum ratings (Ta=25C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Limits
−30
−30
−6
−1.5
−3
500
1.25
0.9
150
−55 to +150
PC
Tj
Tstg
Unit
V
V
V
A
A
∗1
mW/Total ∗2
W/Total ∗3
W/Element ∗3
°C
°C
+
+
∗1 Single pulse Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25mm 25mm t0.8mm ceramic substrate.
Tr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Power dissipation
Limits
30
30
6
1.5
3
500
1.25
0.9
150
−55 to +150
+
+
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Single pulse Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25mm 25mm t0.8mm ceramic substrate.
Unit
V
V
V
A
∗1
A
mW/Total ∗2
W/Total ∗3
W/Element ∗3
°C
°C
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1/4
2011.04 - Rev.A
QSZ2
Data Sheet
Electrical characteristics (Ta=25C)
Tr1
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−30
−
−
V
IC= −10μA
Collector-emitter breakdown viltage
BVCEO
−30
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE= −10μA
Collector cutoff current
ICBO
−
−
−100
nA
VCB= −30V
Emitter cutoff current
IEBO
−
−
−100
nA
VEB= −6V
VCE(sat)
−
−200
−370
mV
IC= −1mA, IB= −50mA
hFE
270
−
680
−
fT
−
280
−
MHz
Cob
−
13
−
pF
Parameter
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Pulsed
Conditions
VCE= −2V, IC= −100mA ∗
VCE= −2V, IE=100mA, f=100MHz ∗
VCB= −10V, IE=0mA, f=1MHz
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
30
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
140
−
300
11
Max.
−
−
−
100
100
350
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=10μA
IC=1mA
IE=10μA
VCB=30V
VEB=6V
IC=1A, IB=50mA
VCE=2V, IC=100mA ∗
VCE=2V, IE= −100mA, f=100MHz∗
VCB=10V, IE=0A, f=1MHz
∗ Pulsed
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2/4
2011.04 - Rev.A
QSZ2
Data Sheet
Electrical characteristic curves
VCE=2V
Pulsed
Ta=25°C
Ta= −40°C
100
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
VBE(sat)
0.1
Ta= −40°C
0.01
0.001
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT : IC (A)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C
0.01
0.1
1
Ta=25°C
Ta= −40°C
0.01
0.5
1
10
COLLECTOR CURRENT : IC (A)
1.5
1
Ta=25°C
Pulsed
0.1
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
0.01
0.001
0.01
0.1
1
Fig.3 Collector-emitter saturation voltage
vs. collector current
Ta=25°C
Ta=25°C
VCE=2V
f=100MHz
100
10
COLLECTOR CURRENT : IC (A)
1000
1000
Ta=100°C
0.001
0
Ta=100°C
VCE(sat)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
VCE=2V
Pulsed
0.1
Ta= −40°C
Ta=25°C
Ta=100°C
1
Fig.1 DC current gain
vs. collector current
1
=20/1
IC/IB=20
Pulsed
VCE=5V
f=100MHz
tstg
SWITCHING TIME : (ns)
DC CURRENT GAIN : hFE
Ta=100°C
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000
BASE SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Tr1
100
tf
tdon
10
tr
10
0.01
0.1
1
10
1
0.01
0.1
1
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Grounded emitter propagation
characteristics
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Switching time
10
1000
Ta=25°C
IC=0A
f=1MHz
Cib
100
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
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c 2011 ROHM Co., Ltd. All rights reserved.
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3/4
2011.04 - Rev.A
QSZ2
Data Sheet
VCE= −2V
Pulsed
Ta=25°C
Ta= −40°C
100
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
1
VBE(sat)
0.1
0.01
0.001
0.1
1
0.01
0.5
10
COLLECTOR CURRENT : IC (A)
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT : IC (A)
Ta=25°C
Ta= −40°C
1
Fig.11 Grounded emitter propagation
characteristics
10
Ta=25°C
Pulsed
1
0.1
IC/IB=50/1
0.01
IC/IB=10/1
IC/IB=20/1
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.10 Collector-emitter saturation voltage
vs. collector current
1000
Ta=25°C
Ta=25°C
VCE=2V
f=100MHz
100
VCE= −5V
IC/IB=20/1
tstg
100
tf
tdon
10
tr
10
0.01
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
0.01
1000
Ta=100°C
0.001
0
IC/IB=20/1
Pulsed
Fig.9 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
VCE= −2V
Pulsed
0.1
Ta=100°C
Ta=25°C
Ta= −40°C
VCE(sat)
Fig.8 DC current gain
vs. collector current
1
Ta= −40°C
Ta=25°C
Ta=100°C
SWITCHING TIME : (ns)
DC CURRENT GAIN : hFE
Ta=100°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000
BASE SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Tr2
0.1
1
10
1
0.01
0.1
1
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.12 Gain bandwidth product
vs. emitter current
Fig.13 Switching time
10
1000
Ta=25°C
IC=0A
f=1MHz
Cib
100
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.14 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
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c 2011 ROHM Co., Ltd. All rights reserved.
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2011.04 - Rev.A
Notice
Notes
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R1120A