ROHM QS5W1

Data Sheet
Midium Power Transistors (30V / 3A)
QS5W1
 Structure
NPN Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
TSMT5
 Features
1) Low saturation voltage
V CE (sat) = 0.4V (Max.) (I C / I B= 1A / 50mA)
2) High speed switching
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
Abbreviated symbol : W01
(5) Tr.1 Collector
 Applications
Low Frequency Amplifier
Driver
 Packaging specifications
Type
 Inner circuit (Unit : mm)
Package
TSMT5
Code
TR
Basic ordering unit (pieces) 3000
(5)
(4)
Tr.1
 Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr.1 and Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
Limits
30
VCEO
30
VEBO
6
IC
3
ICP *1
6
*2
0.5
PD
1.25
PD *3
PD *3
0.9
Tj
150
Tstg
-55 to 150
Unit
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
(1)
Tr.2
(2)
(3)
V
V
V
A
A
W/Total
W/Total
W/Element
C
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.02 - Rev.A
QS5W1
Data Sheet
Electrical characteristics (Ta=25°C)
<It is the same ratings for the Tr.1 and Tr.2>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
Parameter
BVCEO
30
-
-
V
IC= 1mA
Conditions
Collector-base breakdown voltage
BVCBO
30
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
VCB= 30V
Emitter cut-off current
IEBO
A
VEB= 4V
-
-
1
*1
VCE(sat)
-
200
400
hFE
200
-
500
-
-
270
-
MHz
Cob
-
16
-
pF
Turn-on time
ton *2
-
25
-
ns
Storage time
tstg *2
-
300
-
ns
t f *2
-
20
-
ns
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Fall time
fT
*1
mV IC= 1A, IB= 50mA
VCE= 2V, IC= 500mA
VCE= 10V
IE=-100mA, f=100MHz
VCB= 10V, IE=0A
f=1MHz
IC= 1.5A, I B1= 150mA,
IB2=-150mA, V CC~
_ 12V
*1 Pulsed
*2 See switching time test circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.02 - Rev.A
Data Sheet
QS5W1
Electrical characteristic curves (Ta=25C)
Fig.2 DC Current Gain vs. Collector Current ( I )
Fig.1 Typical Output Characteristics
5mA 2.5mA
0.5
1000
Ta=25°C
2mA
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC[A]
0.4
1.5mA
0.3
1.0mA
0.2
0.1
VCE=5V
2V
100
IB=0.5mA
Ta=25°C
10
0.0
0
0.5
1
1.5
1
2
10
COLECTOR TO EMITTER VOLTAGE :VCE[V]
10000
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
1000
1
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
VCE=2V
DC CURRENT GAIN : hFE
1000
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs. Collector Current ( II )
Ta=125°C
75°C
25°C
-40°C
100
Ta=25°C
Pulsed
0.1
IC/IB=50
20
10
0.01
0.001
10
1
10
100
1000
1
10000
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
Fig.6 Ground Emitter Propagation Characteristics
1
10000
VCE=2V
COLLECTOR CURRENT : IC[mA]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
100
0.1
Ta=125°C
75°C
25°C
-40°C
0.01
1000
Ta=125°C
75°C
25°C
-40°C
100
10
IC/IB=20
Pulsed
0.001
1
1
10
100
1000
0
10000
COLLECTOR CURRENT : IC[mA]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.2
0.4
0.6
0.8
1
1.2
1.4
BASE TO EMITTER VOLTAGE : VBE[V]
3/5
2011.02 - Rev.A
Data Sheet
QS5W1
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
Ta=25°C
VCE=10V
Pulsed
TRANSITION FREQUENCY : fT[MHz]
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
1000
100
10
Cob
1
100
10
0.1
1
10
100
-10
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
-100
-1000
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
10
COLLECTOR CURRENT : IC [A]
1ms
1
10ms
100ms
0.1
DC
(Mounted on a recommended land)
0.01
Ta=25°C
When one element operated
Single non repetitive pulse
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.02 - Rev.A
QS5W1
Data Sheet
 Switching time test circuit
RL=8.2Ω
I B1
V IN
IC
VCC ~
_12V
IB2
Pw ~
_50μs
Pw
DUTY CYCLE≦1%
I B1
BASE CURENT WAVEFORM
IB2
ton
COLLECTOR CURRENT
WAVEFORM
tstg
tf
90%
IC
10%
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5/5
2011.02 - Rev.A
Notice
Notes
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R1120A