2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (−20V, −3A) 2SB1424 / 2SA1585S zExternal dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) zStructure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 3.0±0.2 5 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 ∗ Abbreviated symbol: AE ∗ Denotes h 3Min. 1.6±0.1 2±0.2 3±0.2 1.5±0.1 (15Min.) 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 zFeatures 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 −0.05 2.5 +0.4 −0.1 0.5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base FE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V 2SB1424 IC Collector current 2SA1585S ICP Collector power dissipation 2SB1424 2SA1585S PC −3 −2 −5 0.5 0.4 A A(Pulse) ∗ W Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗ Single pulse Pw=10ms Rev.A 1/3 0.45 +0.15 −0.05 2SB1424 / 2SA1585S Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO −20 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −20 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −50µA ICBO − − −0.1 µA VCB= −20V Collector cutoff current IEBO − − −0.1 µA VEB= −5V − − −0.5 V IC/IB= −2A/ −0.1A VCE= −2V, IC= −0.1A hFE 120 − 390 − Transition frequency fT − 240 − MHz Output capacitance Cob − 35 − pF DC current transfer ratio zPackaging specifications and hFE Taping Code hFE 2SA1585S QR 2SB1424 QR Basic ordering unit (pieces) VCE= −2V, IE=0.5A, f=100MHz VCB= −10V, IE=0A, f=1MHz hFE values are classified as follows : Package Type Conditions VCE(sat) Emitter cutoff current Collector-emitter saturation voltage Unit TP T100 5000 1000 Item Q R hFE 120 to 270 180 to 390 − − zElectrical characteristic curves −2 −1 −0.5 −0.2 −0.1 −0.05 Ta=100°C 25°C −40°C −0.02 −0.01 −5m −2m −1m 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 −2.0 VCE= −2V Grounded emitter propagation characteristics −20mA −18mA A −16m −50mA −12mA −1.6 −10mA −8mA −1.2 −6mA −0.8 −4mA −2mA −0.4 0 0 −0.2 −0.4 −0.6 −0.8 IB=0A −1.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 −5 Ta=25°C −14mA Grounded emitter output characteristics ( ) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −5 COLLECTOR CURRENT : IC (A) −10 −4 −3 −20mA −15mA −2 −10mA −5mA −1 0 0 Ta=25°C −45mA −40mA 35mA − −30mA −25mA IB=0A −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) Rev.A 2/3 2SB1424 / 2SA1585S DC CURRENT GAIN : hFE Ta=100°C 25°C −40°C 1k 500 200 100 50 20 10 5 −1m −2m −5m −0m −20m −50m −100m −200m −500m −1 −2 −5 −10 −2 −500m −100m −50m −20m −10m −5m −2m −1m −2m −5m −10m −20m −50m −100m −200m −500m −1 −2 IC/IB=50 −500m −100m −50m Ta=100°C −40°C 25°C −20m −10m −5m −2m −1m −2m −5m −10m −20m −50m −100m −200m −500m−1 −2 −5 −10 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.5 −1 −200m IC/IB=20 −1 −500m Ta=100°C 25°C −40°C −200m −100m −50m −20m −10m −5m −2m −1m −2m −5m −10m −20m −50m −100m −200m −500m −1 −2 Collector-emitter saturation voltage vs. collector current ( Fig.6 Cib 200 100 Collector-emitter saturation voltage vs. collector current ( ) 1000 Ta=25°C f=1MHz IE=0A IC=0A 500 Cob 50 20 10 −0.1 −0.2 −0.5 −1 −5 −10 −20 −50 Ta=25°C VCE= −2V 500 200 100 50 20 10 5 2 1 −2 1 Fig.8 Gain bandwidth product vs. emitter current Collector output capacitance vs. collector-base voltage 2 5 10 20 50 100 200 5001000 EMITTER CURRENT : IE (mA) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) ) −5 −10 COLLECTOR CURRENT : IC (A) Collector-emitter saturation voltage vs. collector curren ( ) 1000 COLLECTOR CURRENT : IC (A) Fig.7 −5 −10 −2 COLLECTOR CURRENT : IC (A) DC current gain vs. collector current −2 Ta=100°C 25°C −40°C −200m COLLECTOR CURRENT : IC (A) Fig.4 IC/IB=10 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE= −2V 2k TRANSITION FREQUENCY : fT (MHz) 5k COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Fig.9 Emitter input capacitance vs. emitter base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1