Switching Diodes MA2B170, MA2B171 Silicon epitaxial planar type Unit : mm For high-speed switching circuits φ 0.56 max. 1 ■ Features 4.5 max. • Large forward current IF(AV) • High switching speed • Small terminal capacitance, Ct 24 min. COLORED BAND INDICATES CATHODE 1st Band 2nd Band Parameter Symbol Reverse voltage (DC) MA2B170 Repetitive peak reverse voltage MA2B170 Rating Unit 40 V VR MA2B171 24 min. ■ Absolute Maximum Ratings Ta = 25°C 80 VRRM 40 MA2B171 2 V 80 φ 1.95 max. Average forward current IF(AV) 200 mA Repetitive peak forward current IFRM 600 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C 1 : Cathode 2 : Anode JEDEC : DO-35 Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA2B170 Max Unit IR1 VR = 15 V Conditions Min Typ 50 nA IR2 VR = 35 V 500 nA MA2B171 MA2B170 MA2B171 MA2B170 IR MA2B171 VR = 75 V 500 VR = 35 V, Ta = 150°C 100 µA VR = 75 V, Ta = 150°C 100 Forward voltage (DC) VF IF = 200 mA 1.1 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 4 pF Reverse recovery time* trr IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 20 ns Note) 1. Rated input/output frequency: 100 MHz ■ Cathode Indication Type No. Color 1st Band 2nd Band 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse MA2B170 MA2B171 Violet White tp tr Violet 10% A Green VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω 1 MA2B170, MA2B171 Switching Diodes Common characteristics charts IF V F Ct VR VF Ta 1 000 10 0.8 0.7 Terminal capacitance Ct (pF) 5 Forward voltage VF (V) Forward current IF (mA) 100 Ta = 150°C 75°C 10 25°C 1 0.6 IF = 10 mA 0.5 1 mA 0.4 0.1 mA 0.3 0.2 0.1 0 0.2 0.4 0.6 0.8 0 −40 1.0 Forward voltage VF (V) 40 80 120 160 180 IR V R IR T a 100 Ta = 150°C Reverse current IR (µA) Reverse current IR (µA) 10 1 75°C 0.1 25°C 0.01 0.001 0 10 20 30 40 VR = 35 V 1 15 V 0.1 0.01 50 60 0.001 −40 Reverse voltage VR (V) 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of MA2B171 IR V R IR T a 100 100 Ta = 150°C 10 Reverse current IR (µA) Reverse current IR (µA) 10 75°C 1 0.1 25°C 0.001 0 20 40 60 80 100 Reverse voltage VR (V) 2 VR = 75 V 1 15 V 0.1 0.01 0.01 120 0.001 −40 1 0.5 0.3 0 40 80 120 160 Ambient temperature Ta (°C) 0 10 20 30 40 Reverse voltage VR (V) (°C) Characteristics charts of MA2B170 10 2 0.1 0 Ambient temperature Ta 100 3 0.2 0.1 0.01 f = 1 MHz Ta = 25°C 200 50