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UF1001 - UF1007
1.0A Axial Leaded Ultrafast Diode
Features
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Diffused Junction
Ultra-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Low Reverse Leakage Current
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
B
A
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C
D
Mechanical Data
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A
DO-41
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.35 grams (approx.)
Mounting Position: Any
Dim
Min
A
25.40
Max
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TA = 55°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Symbol
UF
1001
UF
1002
UF
1003
UF
1004
UF
1005
UF
1006
UF
1007
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.0
A
IFSM
30
A
@ IF = 1.0A
VFM
@ TA = 25°C
@ TA = 100°C
IRM
1.0
1.3
1.7
5.0
100
V
mA
Reverse Recovery Time (Note 3)
trr
50
75
ns
Typical Junction Capacitance (Note 2)
Cj
20
10
pF
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
RqJA
95
K/W
Tj, TSTG
-65 to +150
°C
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
1 of 2
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
1.00
Single phase half wave
Resistive or Inductive load
0.75
0.50
0.25
0
0
25
50
75
100
125
150
Tj = 25°C
Pulse width = 300µs
10
0.1
UF1005 - UF1007
0.01
175
0
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
20
10
0.6
0.8
1.0
100
10
UF1005 - UF1007
1
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
(+)
(-)
+0.5A
10Ω NI
Device
Under
Test
(-)
0A
Pulse
Generator
(Note 2)
50V DC
Approx
1.0Ω
NI
Oscilloscope
(Note 1)
1.4
Tj = 25°C
f = 1.0MHz
trr
50Ω NI (Non-inductive)
1.2
UF1001 - UF1004
1
0
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
0.4
100
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
1
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
30
UF1004
UF1001 - UF1003
1.0
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
2 of 2
100