TO-126 Plastic-Encapsulate Transistors BD034

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD034
TRANSISTOR (PNP)
TO – 126
FEATURES
z High Transition Frequency
z High Collector Current
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-95
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current
-2.5
A
PC
Collector Power Dissipation
1.25
W
Thermal Resistance From Junction To Ambient
100
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-110
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-95
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-100V,IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-1
μA
hFE(1)
VCE=-2V, IC=-100mA
100
hFE(2)
VCE=-2V, IC=-1.5A
40
VCE(sat)
IC=-2A,IB=-200mA
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
VBE
Transition frequency
fT
560
-0.5
V
-1
V
VCE=-5V, IC=-500mA
VCE=-1V,IC=-250mA, f=1MHz
3
MHz
CLASSIFICATION OF hFE(1)
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560
A,Dec,2010