SSF6010
Feathers:
ID =75A
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=60V
Rdson=8mΩ (typ.)
Description:
The SSF6010 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6010 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF6010 TOP View (TO220)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
75
ID@Tc=100ْC
Continuous drain current,VGS@10V
45
IDM
Pulsed drain current
①
Units
A
300
Power dissipation
144
W
Linear derating factor
0.74
W/ C
ْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
220
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
PD@TC=25ْC
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
1.04
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
60
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
8
10
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
4.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
—
58
—
S
VDS=5V,ID=30A
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
Max. Units
2011.12.15
Test Conditions
VDS=60V,VGS=0V
μA
VDS=60V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version: 2.3
page
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SSF6010
Total gate charge
—
45
—
Qgs
Gate-to-Source charge
—
4.2
—
Qgd
Gate-to-Drain("Miller") charge
—
15
—
td(on)
Turn-on delay time
—
14.6
—
tr
Rise time
—
14.2
—
td(off)
Turn-Off delay time
—
40
—
tf
Fall time
—
7.3
—
Ciss
Input capacitance
—
1480
—
Coss
Output capacitance
—
190
—
Crss
Reverse transfer capacitance
—
135
—
Qg
ID=30A
nC
VDD=30V
VGS=10V
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VGS=10V
VGS=0V
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Min.
Typ.
Max.
—
—
75
Units
Test Conditions
MOSFET symbol
showing the
A
—
—
300
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
trr
Reverse Recovery Time
—
33
—
nS
TJ=25ْC,IF=60A
Qrr
Reverse Recovery Charge
—
61
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS test circuit:
BV dss
Gate charge test circuit:
L
V dd
Vgs
RL
RG
VDD
1mA
©Silikron Semiconductor Corporation
2011.12.15
RG
Version: 2.3
page
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SSF6010
Switch Waveforms:
Switch Time Test Circuit：
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
©Silikron Semiconductor Corporation
2011.12.15
Version: 2.3
page
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SSF6010
Gate Charge
Source-Drain Diode Forward Voltage
Max Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2011.12.15
Version: 2.3
page
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SSF6010
TO220 MECHANICAL DATA:
TO220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ3
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
70
ϴ3
-
ϴ4
-
©Silikron Semiconductor Corporation
E1
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
Min
0.087
0.050
0.390
-
3
-
5
30
-
10
0
2011.12.15
0
70
-
0
7
90
30
50
Version: 2.3
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