SSFT3904J7-HF

SSFT3904J7-HF
Silikron Semiconductor Power MOSFET Series
In low profile, small foot print QFN5x6 package
Silikron Semiconductor introduces a new N-channel trench MOSFET in low profile, small foot print QFN5x6 package, Designed to save space
and increase power efficiency in portable electronics. The device is optimized for load and charge switched, DC/DC converters, and Hbridges and battery protection for power management in smart phones, tablet PCs, mobile computing device, and handheld consumer
electronics with small brushless DC motors. For these applications the product present a Rdson of about 2.1mohm@vgs=10V, this series is
developed to meet the need that require better energy efficiency, lower thermal resistance and smaller and thinner in size. The product is 100%
EAS tested, halogen-free by design, and meet the UL94 V-0 flammability rating.
FEATURES
 Low on state resistance
 High cell density
 Low profile extra thin package (1.0mm)
 Low thermal resistance
 Halogen free by design
BENEFITS
 Energy efficient
 Spacing saving, only 1mm height
 Better thermal efficiency, RθJC is about 2℃/W
Power QFN 5X6
6.10x5.20x1.00
(L x W x H max value in mm)
Free samples available for immediate testing.
APPLICATIONS
 DC/DC convertors
 Low side switch
 Secondary rectification
 Synchronous rectification
 Battery protection
 Motor control
PRODUCT SERIES
Maxim Ratings and Electrical Characteristics (Tc=25°C unless otherwise noted）
VDS
IDS
MPN
Switch Time(typ value)
RDSON
@ID=30A
Vgs=10V
Vgsth
Capacitance(typ value)
Qg
RΘJA
td(on)
tr
td(off)
tf
Ciss
(ns)
Coss
Crss
(V)
(A)
typ(mohm)
(V)
(nC)
(pF)
SSFT3904J7
30
120
2.1
1~3
68
19
18
145
63
9291
748
702
2.5
SSFT4004J7
40
100
3
1~3
111
18
139
107
142
7080
496
479
2.5
SSFT6014J7
60
60
14
2~4
45
15
14
40
7.3
1480
190
135
3
www.silikron.com
Building 11A Suchun Industrial Square, 428# Xionglong Street, Suzhou P.R.China
(°C/W)