Product specification WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPM3407 is Pb-free. 3 1 Features 2 V(BR)DSS −30 V SOT 23-3 RDS(on) Typ 36 mΩ @ −10 V 53 mΩ @ −4.5 V pin connections : Application z z z z z PïChannel Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch G 1 3 S D 2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA=25°C TA=70°C Pulsed Drain Current Maximum Power Dissipation a ID 10 S -30 IDM TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, Tstg Drain 3 V ±20 - 4.4 - 3.5 Marking: Steady State Unit WP7Z - 3.7 - 2.9 A -20 G 2 1 Gate 1.4 1.0 0.9 0.6 -55 to 150 W Source W P7= Specific Device Code Z = Date Code °C Order information Part Number Package Shipping WPM3407-3/TR SOT23-3 3000Tape&Reel http://www.twtysemi.com [email protected] 1 of 2 Product specification WPM3407 THERMAL RESISTANCE RATINGS Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Case Thermal Resistance t ≤ 10 s Steady State Steady State Typical Maximum 70 90 90 125 50 80 RθJA RθJC Unit °C/W a. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu. Electrical Characteristics (T = 25°C unless otherwise noted) J Parameter Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250 µA -30 Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250 µA Drain-source On-Resistance RDS(on) Typ Max Unit Static Parameters VDS= 2 4 V , VGS = 0 V V TJ = 25°C -1 TJ = 85°C -10 -1.0 VGS = -10V, ID =-4.4A VGS = -4.5, ID =-3.0A -2.0 ±100 nA -3.0 V 36 46 53 66 -1.5 Forward Recovery Voltage VSD VGS = 0 V, IS =-1.0A -0.5 -0.79 Forward Transconductance gFS VDS = -5.0 V, ID = -5 A 5 8 µA mΩ V S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 700 950 1200 90 120 150 Crss 75 100 125 Total Gate Charge Qg(tot) 13 18 23 Threshold Gate Charge Qg(th) 1.5 2 2.5 2 2.5 3 3 3.8 4.5 5 8 8 11 15 4 6 9 30 40 50 5 7.5 10 Gate- Source Charge Qgs Gate- Drain Charge Qgd Gate Resistance Rg VGS = 0 V, f = 1.0 MHz, VDS = -15 V VGS = -10 V, VDS = -15 V, ID =-5 A VGS = 0 V, VDS = 0 V, f = 1.0 MHz pF nC Ω Switching Parameters Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) tr td(off) VGS = -10 V, VDS = -15 V, ID=-4.3A, RG=6 Ω ns Fall Time tf Body Diode Reverse Recovery Time trr IF=-5A, dI/dt=100A/µs 25 ns Body Diode Reverse Recovery Charge Qrr IF=-5A, dI/dt=100A/µs 14 nC http://www.twtysemi.com [email protected] 2 of 2