BSS84W P-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 Description: SOT-323(SC-70) * These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. 3 DRAIN Features: * Simple Drive Requirement * Small Package Outline 1 GATE 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Symbol Value Unit Drain-Source Voltage VDDS 50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current VGS = (TA=25°C) ID 130 mA Pulsed Drain Current (tp <=10µS) IDM 520 mA Total Power Dissipation (TA =25°C) PD 225 mW RθJA 556 °C/W TJ -55 to +150 °C Tstg -55 to +150 °C TL 260 °C Rating Thermal Resistance – Junction–to–Ambient Operating Junction Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, for 10 seconds Device Marking BSS84W = PD WEITRON http://www.weitron.com.tw 1/5 20-Sep-2010 BSS84W Electrical Characteristics (TA=25°C Unless otherwise noted) Min Typ Max Unit V( B R ) D S S 50 - - V Gate–Source Threaded Voltage VDS=VGS, ID=1.0mA VGS (th) 0.8 - 2.0 V Gate-Body Leakage Current VGS=±20V, VDS=0 IGSS - - ±60 µA Zero Gate Voltage Drain Current VDS=25V, VGS=0 VDS=50V, VGS=0 VDS=50V, VGS=0, TJ = 125°C) IDSS - - 0.1 15 60 µA RDS (on) - 5.0 10 Ω lyfs l 50 - - mS Input Capacitance VDS=5.0V Ciss - 30 - Output Capacitance VDS=5.0V Coss - 10 - Reverse Transfer Capacitance VDS=5.0V Crss - 5.0 - Turn-On Delay Time VDD=-15V, ID =-2.5A, RL=50Ω td(on) - 2.5 - Rise Time VDD=-15V, ID =-2.5A, RL=50Ω tr - 1.0 - Turn-Off Delay Time VDD=-15V, ID =-2.5A, RL=50Ω td(off) - 16 - Fall Time VDD=-15V, ID =-2.5A, RL=50Ω tf - 8.0 - Gate Charge QT - 6000 - Continuous Current IS - - 0.130 Pulsed Current I SM - - 0.520 Forward Voltage (Note 2.) VSD - 2.5 - Characteristic Symbol Static Drain-Source Breakdown Voltage VGS=0V, ID=250µA Static Drain-Source On-Resistance VGS=5.0V, ID=100mA Transfer Admittance VDS=25V, ID=100mA, f = 1.0kHz Dynamic pF Switching2 ns pC Source–Drain Diode A V 2. Switching characteristics are independent of operating junction temperature. WEITRON http://www.weitron.com.tw 2/5 20-Sep-2010 BSS84W TYPICAL ELECTRICAL CHARACTERISTICS ° ° ° ° Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics ° ° ° ° ° ° Figure 4. On–Resistance versus Drain Current Figure 3. On–Resistance versus Drain Current WEITRON http://www.weitron.com.tw 3/5 20-Sep-2010 BSS84W TYPICAL ELECTRICAL CHARACTERISTICS ° ° Figure 6. Gate Charge Figure 5. On–Resistance Variation with Temperature ° ° ° Figure 7. Body Diode Forward Voltage WEITRON http://www.weitron.com.tw 4/5 20-Sep-2010 BSS84W SOT-323 Outline Demensions Unit:mm A B T OP V IE W Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 5/5 SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 20-Sep-2010