US2301 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2301 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US2301 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID -20V 110m -2.5A Applications z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Features Advanced high cell density Trench technology SOT23 Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline D Green Device Available 2 1 3 G S Absolute Maximum Ratings Symbol Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID* Continue Drain Current -2.5 IDM* Pulsed Drain Current -10 IS* Diode continuous forward current -1.5 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V A A °C -55 to 150 Thermal Resistance-Junction to Ambient TA=25°C 0.83 TA=100°C 0.3 150 1 W °C/W US2301 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol , unless otherwise noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD Min. Typ. VGS=±12V, VDS=0V Max. -20 -1 -30 -0.45 Unit V TJ=85°C Gate Leakage Current Drain-Source On-state Resistance US2301 VDS=-16V, VGS=0V VDS=VGS, IDS=-250μA Gate Charge Characteristics Qg Total Gate Charge -0.7 μA -1 V ±100 nA VGS=-4.5V, IDS=-2.5A 85 110 VGS=-2.5V, IDS=-2A 110 150 ISD=-0.5A , VGS=0V -0.8 -1.3 5 7 mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge Parameter Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, IDS=-250μA Gate Threshold Voltage Diode Forward Voltage Symbol Test Condition VDS=-10V, VGS=-4.5V, IDS=-2.5A 0.7 nC 0.6 Test Condition VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-10V, RL=10Ω IDS=-1A, VGEN=-4.5V, RG=6Ω Turn-off Fall Time Notes： a : Pulse test ; pulse width≤300μs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 2 US2301 Min. Typ. Max. Unit Ω 9.2 360 80 pF 50 8 16 7 15 18 35 8 15 ns US2301 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 3 US2301 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 4 US2301 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 5 US2301 P-Ch 20V Fast Switching MOSFETs Typical Characteristics SOT-23 D B 3 E H 2 1 e S e1 A L A1 Dim C Millimeters Inches Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 3.00 0.094 e1 1.90 TYP H 2.40 L 0.37 0.075 TYP. 0.015 Physical Specifications Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 6 0.118