STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. A E 6 5 L 4 FEATURES B Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. 1 F 2 3 C J K DG APPLICATION H REF. A B C D E F DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7’ inch D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V TA= 25°C Continuous Drain Current 1 TA= 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 TA= 25°C Power Dissipation 1 TA= 70°C Operating Junction and Storage Temperature Range ID 2.0 1.6 A IDM -8 A IS -2.1 A PD Tj, Tstg 2.0 1.3 W -55~150 °C 62.5 110 °C / W Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 5 sec RJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 08-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 -20 - - - - 350 - - 450 gfs - 2.8 - S VDS= -15V, ID= -1.4A VSD - - -1 V IS= -1.4A, VGS=0 On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) μA A VDS= -80V, VGS=0 VDS= -80V, VGS=0, TJ= 55°C VDS = -5V, VGS= -10V mΩ VGS= -10V, ID= -1.4A VGS= -4.5V, ID= -1.2A Dynamic 2 Total Gate Charge Qg - 6 - Gate-Source Charge Qgs - 10 - Gate-Drain Charge Qgd - 3 - Turn-on Delay Time Td(on) - 3 - Tr - 3 - Td(off) - 13 - Tf - 7 - Rise Time Turn-off Delay Time Fall Time nC VDS= -30V, VGS= -4.5V, ID= -1.4A nS VDD= -30V, VGEN= -10V, RL=30Ω, ID= -1A, RG= 6Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 08-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2