SECOS SDN520C

SDN520C
N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ
Ω
P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ
Ω
N & P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DFN2x2-6L
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell Density trench process to provide low RDS(on)
and to assures minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe DFN2X2_6L
saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
REF.
A
B
C
D
E
DC-DC converters and power management
in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular
and cordless telephones.
Millimeter
Typ.
2.00 BSC.
2.00 BSC.
0.75
0.675
0.25
0.30
0.81
0.86
Min.
F
REF.
Max.
G
H
J
K
L
0.80
0.35
0.91
0.65BSC
P
Millimeter
Typ.
Max.
0.30
0.38
0.65BSC
0
-0.05
0.15
0.20
0.25
0.30
0.25
0.35
Min.
0.23
0.60
0.65
0.70
TOP VIEW
ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
TA=25℃
℃
TA=70℃
℃
1
2
Pulsed Drain Current
1
Continuous Source Current (Diode Conduction)
TA=25℃
℃
1
Power Dissipation
TA=70℃
℃
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction to Ambient
1
ID
IDM
IS
P-Channel
20
±8
4.5
4.5
8
4.5
-20
±8
-4.5
-4.5
-8
-4.5
6.5
5
-55 ~ +150
PD
TJ, Tstg
Thermal Resistance Rating
Symbol
t ≦ 5 sec
Steady State
Ratings
N-Channel
RθJA
Typ
52
12.5
Max
65
16
Unit
V
V
A
A
A
W
℃
Unit
℃/W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
SDN520C
N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ
Ω
P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ
Ω
N & P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Min.
Typ.
Max.
1
-
-
-1
-
-
-
-
100
P-Ch
-
-
-100
N-Ch
-
-
1
-
-
-1
N-Ch
-
-
10
VDS=16V, VGS=0 , TJ=55℃
P-Ch
-
-
-10
VDS= -16V, VGS=0 , TJ=55℃
5
-
-
P-Ch
-5
-
-
N-Ch
-
-
58
-
-
112
N-Ch
-
-
82
VGS=2.5V, ID= A
P-Ch
-
-
172
VGS=-2.5V, ID= -1A
-
10
-
-
5
-
-
0.80
-
-
-0.83
-
Parameter
Symbol
N-Ch
Gate-Threshold Voltage
VGS(th)
P-Ch
N-Ch
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
N-Ch
1
Drain-Source On-Resistance
Forward Transconductance
P-Ch
1
1
P-Ch
N-Ch
IGSS
IDSS
ID(on)
RDS(ON)
gfs
P-Ch
Diode Forward Voltage
1
N-Ch
VSD
P-Ch
Dynamic
Total Gate Charge
N-Ch
7.5
-
-
3.8
-
-
0.6
-
-
0.6
-
-
1.0
-
-
1.5
-
-
5
-
P-Ch
-
5
-
N-Ch
-
12
-
P-Ch
-
15
-
N-Ch
-
13
-
-
20
-
-
7
-
-
20
-
P-Ch
Gate-Source Charge
N-Ch
Qgs
P-Ch
Gate-Drain Charge
N-Ch
Qgd
P-Ch
N-Ch
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VDS=VGS, ID=250uA
V
VDS=VGS, ID= -250uA
VDS= 0 , VGS= 8 V
uA
VDS= 0 , VGS= -8 V
VDS=16 V, VGS=0
VDS=-16V, VGS=0
uA
VDS = 5V, VGS=4.5 V
A
VDS = -5V, VGS= -4.5 V
VGS=4.5V, ID= 1A
mΩ
S
VGS=-4.5V, ID= 1A
VDS= 5V, ID= 1A
VDS= -5V, ID= 11A
S
IS= 1.05A, VGS= 0
IS= -1.05A, VGS= 0
2
-
Qg
Unit
N-Channel
VDS=15V, VGS= 4.5V,
ID= 2.7A
nC
P-Channel
VDS= -15V, VGS= -4.5V,
ID= -3.1A
Td(on)
Tr
Td(off)
P-Ch
N-Ch
Fall Time
P-Ch
Tf
N-Channel
VDD= 15V, RGEN= 15Ω,
VGS= 4.5V, ID= 1A
nS
P-Channel
VDD= -15V, RGEN= 15Ω
VGS= -4.5V, ID= -1A
Notes:
1. Pulse test: PW <= 300us duty cycle <= 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2