SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ Ω P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ Ω N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a high cell Density trench process to provide low RDS(on) and to assures minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2X2_6L saves board space. Fast switching speed. High performance trench technology. APPLICATION REF. A B C D E DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Typ. 2.00 BSC. 2.00 BSC. 0.75 0.675 0.25 0.30 0.81 0.86 Min. F REF. Max. G H J K L 0.80 0.35 0.91 0.65BSC P Millimeter Typ. Max. 0.30 0.38 0.65BSC 0 -0.05 0.15 0.20 0.25 0.30 0.25 0.35 Min. 0.23 0.60 0.65 0.70 TOP VIEW ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current TA=25℃ ℃ TA=70℃ ℃ 1 2 Pulsed Drain Current 1 Continuous Source Current (Diode Conduction) TA=25℃ ℃ 1 Power Dissipation TA=70℃ ℃ Operating Junction and Storage Temperature Range Parameter Maximum Junction to Ambient 1 ID IDM IS P-Channel 20 ±8 4.5 4.5 8 4.5 -20 ±8 -4.5 -4.5 -8 -4.5 6.5 5 -55 ~ +150 PD TJ, Tstg Thermal Resistance Rating Symbol t ≦ 5 sec Steady State Ratings N-Channel RθJA Typ 52 12.5 Max 65 16 Unit V V A A A W ℃ Unit ℃/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 4-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ Ω P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ Ω N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Min. Typ. Max. 1 - - -1 - - - - 100 P-Ch - - -100 N-Ch - - 1 - - -1 N-Ch - - 10 VDS=16V, VGS=0 , TJ=55℃ P-Ch - - -10 VDS= -16V, VGS=0 , TJ=55℃ 5 - - P-Ch -5 - - N-Ch - - 58 - - 112 N-Ch - - 82 VGS=2.5V, ID= A P-Ch - - 172 VGS=-2.5V, ID= -1A - 10 - - 5 - - 0.80 - - -0.83 - Parameter Symbol N-Ch Gate-Threshold Voltage VGS(th) P-Ch N-Ch Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current N-Ch 1 Drain-Source On-Resistance Forward Transconductance P-Ch 1 1 P-Ch N-Ch IGSS IDSS ID(on) RDS(ON) gfs P-Ch Diode Forward Voltage 1 N-Ch VSD P-Ch Dynamic Total Gate Charge N-Ch 7.5 - - 3.8 - - 0.6 - - 0.6 - - 1.0 - - 1.5 - - 5 - P-Ch - 5 - N-Ch - 12 - P-Ch - 15 - N-Ch - 13 - - 20 - - 7 - - 20 - P-Ch Gate-Source Charge N-Ch Qgs P-Ch Gate-Drain Charge N-Ch Qgd P-Ch N-Ch Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VDS=VGS, ID=250uA V VDS=VGS, ID= -250uA VDS= 0 , VGS= 8 V uA VDS= 0 , VGS= -8 V VDS=16 V, VGS=0 VDS=-16V, VGS=0 uA VDS = 5V, VGS=4.5 V A VDS = -5V, VGS= -4.5 V VGS=4.5V, ID= 1A mΩ S VGS=-4.5V, ID= 1A VDS= 5V, ID= 1A VDS= -5V, ID= 11A S IS= 1.05A, VGS= 0 IS= -1.05A, VGS= 0 2 - Qg Unit N-Channel VDS=15V, VGS= 4.5V, ID= 2.7A nC P-Channel VDS= -15V, VGS= -4.5V, ID= -3.1A Td(on) Tr Td(off) P-Ch N-Ch Fall Time P-Ch Tf N-Channel VDD= 15V, RGEN= 15Ω, VGS= 4.5V, ID= 1A nS P-Channel VDD= -15V, RGEN= 15Ω VGS= -4.5V, ID= -1A Notes: 1. Pulse test: PW <= 300us duty cycle <= 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 4-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2