STT3922N

STT3922N
4.1A, 20V, RDS(ON) 47m
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
TSOP-6
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, and PCMCIA cards,
cellular and cordless telephones.
A
E
FEATURES




L
4
B
F

5
6
1
2
3
C
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Fast switching speed
High performance trench technology
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
Leader Size
TSOP-6
3K
7 inch
J
K
DG
Low on-resistance
Low drive current
H
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
G
D
S
S
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
TA= 25°C
Continuous Drain Current 1
TA= 70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction)
1
TA= 25°C
Power Dissipation 1
TA= 70°C
Operating Junction and Storage Temperature Range
ID
4.1
3.2
A
IDM
15
A
IS
1.8
A
PD
TJ, TSTG
1.15
0.7
-55~150
W
°C
Thermal Resistance Rating
Maximum Junction to Ambient 1
t ≦ 10 sec
Steady State
RθJA
110
150
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
08-Jun-2015 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
STT3922N
4.1A, 20V, RDS(ON) 47m
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
0.4
-
-
V
Gate-Body Leakage
IGSS
-
-
±100
nA
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
10
6
-
-
-
-
47
-
-
55
gfs
-
9
-
S
VDS=15V, ID=2A
VSD
-
0.63
-
V
IS=0.9A, VGS=0V
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
1
Diode Forward Voltage
RDS(ON)
VDS=VGS, ID=250μA
μA
A
VDS=0, VGS=±8V
VDS=16V, VGS=0V
VDS=16V, VGS=0V, TJ= 55°C
VDS =5V, VGS=4.5V
mΩ
VGS=4.5V, ID=2A
VGS=2.5V, ID=1.6A
Dynamic b
Total Gate Charge
Qg
-
12
-
Gate-Source Charge
Qgs
-
2.1
-
Gate-Drain Charge
Qgd
-
2.8
-
Turn-on Delay Time
Td(on)
-
8
-
Tr
-
18
-
Td(off)
-
60
-
Tf
-
17
-
Input Capacitance
Ciss
-
726
-
Output Capacitance
Coss
-
74
-
Reverse Transfer Capacitance
Crss
-
69
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS=10V,
VGS=4.5V,
ID=2A
nS
VDS=10V,
RL=5Ω,
ID=2A,
VGNE=4.5V,
RGNE=6Ω
pF
VDS=15V,
VGS=0V,
f=1Mhz
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
08-Jun-2015 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
STT3922N
Elektronische Bauelemente
4.1A, 20V, RDS(ON) 47m
N-Channel Enhancement Mode Power MOSFET
Typical Electrical Characteristics
http://www.SeCoSGmbH.com/
08-Jun-2015 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
STT3922N
Elektronische Bauelemente
4.1A, 20V, RDS(ON) 47m
N-Channel Enhancement Mode Power MOSFET
Typical Electrical Characteristics
http://www.SeCoSGmbH.com/
08-Jun-2015 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4