SMG2305P -4.5A , -20V , RDS(ON) 43 mΩ Ω P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 3 C B Top View 1 1 FEATURES 2 K Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. E 2 D F G REF. A B C D E F APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current TA=25°C 1 -4.5 ID TA=70°C Pulsed Drain Current Power Dissipation 2 IDM TA=25°C 1 A -3.6 -10 1.25 PD TA=70°C Operating Junction and Storage Temperature Range A W 0.8 TJ, TSTG -55~150 °C Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 5 sec Steady-State RθJA 100 °C / W 150 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 8-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2305P -4.5A , -20V , RDS(ON) 43 mΩ Ω P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Static VGS(th) -0.7 - - V VDS=VGS, ID= -250µA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±8V - - -1 Zero Gate Voltage Drain Current IDSS Gate-Threshold Voltage On-State Drain Current 1 Forward Transconductance Diode Forward Voltage - - -10 -10 - - - - 43 - - 54 - - 120 gFS - 12 - S VDS= -5V,,ID= -1.25A VSD - -0.6 - V IS= -0.46A, VGS=0 ID(ON) Drain-Source On-Resistance 1 1 RDS(ON) Dynamic Qg - 12 - Gate-Source Charge Qgs - 2 - Gate-Drain Charge Qgd - 2 - Turn-On Delay Time Td(ON) - 6.5 - Tr - 20 - Td(OFF) - 31 - Tf - 21 - Turn-Off Delay Time Fall Time VDS= -16V, VGS=0, TJ=55°C A VDS= -5V, VGS= -4.5V VGS= -4.5V, ID= -3.6A mΩ VGS= -2.5V, ID= -3.1A VGS= -1.8V, ID= -2.7A 2 Total Gate Charge Rise Time VDS= -16V, VGS=0 µA nC ID= -2.4A VDS= -5V VGS= -4.5V nS IL= -1A, VDD= -10V, VGEN= -4.5V, RG=6Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 8-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2