STT3962NE 2.3A , 60V , RDS(ON) 0.153 Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A E L 5 6 4 FEATURES B Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology 1 2 3 F C REF. DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. J K DG APPLICATION H A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package MPQ TSOP-6 3K Leader Size 7 inch ESD Protection Diode 2KV G1 D1 S2 S2 G2 D2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C 1 TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 2.3 ID IDM 8 A IS 1.05 A TA=25°C 1 A 1.9 1.15 PD TA=70°C Operating Junction and Storage Temperature Range W 0.7 Tj, Tstg -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 10 sec Steady State RθJA 100 °C / W 166 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 4-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 STT3962NE 2.3A , 60V , RDS(ON) 0.153 Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250uA Gate-Body Leakage Current IGSS - - 100 uA VDS=0, VGS=20V - - 1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 1 RDS(ON) uA - - 10 5 - - - - 0.153 VDS =5V, VGS=10V VGS=10V, ID=2.3A Ω 0.185 gfs - 10 - S VDS=5V, ID=2.3A VSD - 0.8 VGS=4.5V, ID=2.1A - V IS=1.05A, VGS=0 2 Qg - 3 - Gate-Source Charge Qgs - 0.6 - Gate-Drain Charge Qgd - 1 - Turn-on Delay Time Td(on) - 5 - Tr - 12 - Td(off) - 13 - Tf - 7 - Fall Time A - Total Gate Charge Turn-off Delay Time VDS=48V, VGS=0, TJ=55°C - Dynamic Rise Time VDS=48V, VGS=0 nC VDS=15V, VGS=4.5V, ID=2.3A nS VDD=15V, VGS=4.5V, RGEN=15Ω, ID=1A Notes: 1. Pulse test: PW ≦ 300us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 4-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2