SMG2329P -2.5 A, -30 V, RDS(ON) 0.112 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. -30 RDS(on) ( 0.112@VGS= -10V 0.172@VGS= -4.5V 1 1 2 K E F G A B C D E F ID(A) -2.5 -2.0 2 D REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) C B Top View Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B Continuous Source Current (Diode Conduction) A SYMBOL RATING UNIT VDS VGS -30 ±20 -2.5 -1.7 ±12 -1.25 -1.3 -0.8 -55 ~ 150 V V ID IDM IS TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦5 sec Maximum Junction to Ambient A RθJA Steady-State Power Dissipation A 100 166 A A A W °C °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 12-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2329P -2.5 A, -30 V, RDS(ON) 0.112 P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) -1 - - V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 - - -50 On-State Drain Current A ID(ON) 10 - - - - 112 - - 172 Drain-Source On-Resistance A RDS(ON) μA A mΩ VDS = -24V, VGS= 0V VDS = -24V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID = -2.5A VGS= -4.5V, ID = -2.0A Forward Transconductance A gFS - 5 - S VDS= -4.5V,,ID = -2.5A Diode Forward Voltage VSD - - -1.2 V IS= -0.75A, VGS=0V Dynamic b Total Gate Charge Qg - 4.5 - Gate-Source Charge Qgs - 1.4 - Gate-Drain Charge Qgd - 2.4 - Turn-On Delay Time Td(on) - 9 - Tr - 12 - Td(off) - 25 - Tf - 14 - Rise Time Turn-Off Delay Time Fall Time ID= -2.5A nC VDS= -30V VGS= -5V ID= -1A, VDD= -30V nS VGEN= -10V RL= 30Ω Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2