KSC2383L 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92L FEATURE Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current G H 1Emitter 2Collector 3Base J A D Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 REF. B CLASSIFICATION OF hFE A B C D E F G H J K K Product-Rank KSC2383L-R KSC2383L-O KSC2383L-Y Range 60~120 100~200 160~320 E C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 160 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 6 V Continuous Collector Current IC 1 A Collector Power Dissipation PC 0.75 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 160 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 160 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=10µA, IC=0 Collector Cut - Off Current ICBO - - 1 µA VCB=150V, IE=0 Collector Cut - Off Current ICER - - 10 µA VCB=150V, REB=10MΩ Emitter cut-off current IEBO - - 1 µA VEB=6V, IC=0 DC Current Gain hFE 60 - 320 VCE=5V, IC=200mA 40 - - VCE=5V, IC=10mA VCE(sat) - - 1 V IC=500mA, IB=50mA VBE - - 0.75 V VCE=5V, IC=5mA fT - 20 - MHz Collector to Emitter Saturation Voltage Base – Emitter Voltage Transition Frequency http://www.SeCoSGmbH.com/ 15-Sep -2014 Rev. A Test Conditions VCE=5V, IC=200mA Any changes of specification will not be informed individually. Page 1 of 2 KSC2383L Elektronische Bauelemente 1A , 160V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Sep -2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 2