STT3524C

STT3524C
N-Ch: 4.1 A, 20 V, RDS(ON) 47 mΩ
Ω
P-Ch: -3.2 A, -20 V, RDS(ON) 79 mΩ
Ω
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
TSOP-6
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density
process. Low RDS(on) assures minimal power loss and conserves
energy, making this device ideal for use in power management
circuitry. Typical applications are DC-DC converters, power
management in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular and cordless
telephones.
A
E
L
5
6
4
B
1
2
3
F
FEATURES
C
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
Leader Size
TSOP-6
3K
7’ inch
J
K
DG
Low RDS(on) Provides Higher Efficiency And Extends
Battery Life.
Miniature TSOP-6 Surface Mount Package Saves
Board Space.
H
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
REF.
G
H
J
K
L
Top View
ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current
TA=25°C
1
Power Dissipation
2
1
TA=25°C
1
N-Channel P-Channel
20
Operating Junction and Storage Temperature Range
Unit
V
V
4.1
-3.2
3.3
-2.6
IDM
8
-8
A
IS
1.05
-1.05
A
1.15
PD
TA=70°C
-20
±8
ID
TA=70°C
Continuous Source Current (Diode Conduction)
Ratings
W
0.7
TJ, TSTG
A
-55 ~ 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
1
Symbol
t ≦ 10 sec
Steady State
RθJA
N-Channel
P-Channel
Typ.
Max.
Typ.
Max.
93
110
93
110
130
150
130
150
Unit
°C / W
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
23-Jan-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
STT3524C
N-Ch: 4.1 A, 20 V, RDS(ON) 47 mΩ
Ω
P-Ch: -3.2 A, -20 V, RDS(ON) 79 mΩ
Ω
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Min.
Typ.
Max.
0.4
-
-
-0.4
-
-
-
-
100
P-Ch
-
-
-100
N-Ch
-
-
1
-
-
-1
N-Ch
-
-
10
VDS=16V, VGS=0 V, TJ=55℃
P-Ch
-
-
-10
VDS= -16V, VGS=0 V, TJ=55℃
5
-
-
P-Ch
-5
-
-
N-Ch
-
-
47
-
-
79
N-Ch
-
-
55
VGS=2.5V, ID=3.8A
P-Ch
-
-
110
VGS=-2.5V, ID= -2.7A
-
10
-
-
5
-
-
0.80
-
-
-0.83
-
Parameter
Symbol
N-Ch
Gate-Threshold Voltage
VGS(th)
P-Ch
N-Ch
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
N-Ch
1
Drain-Source On-Resistance
Forward Transconductance
P-Ch
1
1
P-Ch
N-Ch
IGSS
IDSS
ID(on)
RDS(ON)
gfs
P-Ch
Diode Forward Voltage
1
N-Ch
VSD
P-Ch
DYNAMIC
Total Gate Charge
N-Ch
7.5
-
-
3.8
-
-
0.6
-
-
0.6
-
-
1.0
-
-
1.5
-
-
5
-
P-Ch
-
5
-
N-Ch
-
12
-
P-Ch
-
15
-
N-Ch
-
13
-
-
20
-
-
7
-
-
20
-
P-Ch
Gate-Source Charge
N-Ch
Qgs
P-Ch
Gate-Drain Charge
N-Ch
Qgd
P-Ch
Turn-on Delay Time
Rise Time
Turn-off Delay Time
N-Ch
Td(on)
Tr
Td(off)
P-Ch
Fall Time
N-Ch
Tf
P-Ch
Test Conditions
VDS=VGS, ID=250uA
V
VDS=VGS, ID= -250uA
VDS=0, VGS=8V
uA
VDS=0, VGS= -8V
VDS=16 V, VGS=0 V
VDS=-16V, VGS=0 V
uA
VDS = 5V, VGS=4.5 V
A
VDS = -5V, VGS= -4.5 V
VGS=4.5V, ID=4.1A
mΩ
S
VGS=-4.5V, ID= -3.2A
VDS= 5V, ID= 4.1A
VDS= -5V, ID= -3.2A
S
IS= 1.05A, VGS=0
IS= -1.05A, VGS=0
2
-
Qg
Unit
N-Channel
VDS=15V, VGS= 4.5V,
ID= 4.1A
nC
P-Channel
VDS= -15V, VGS= -4.5V,
ID= -3.2A
N-Channel
VDD= 15V, RGEN= 15Ω,
VGS= 4.5V, ID= 1A
nS
P-Channel
VDD= -15V, RGEN= 15Ω
VGS= -4.5V, ID= -1A
Notes
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
23-Jan-2014 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2