UM10379 Typical 250 W LCD TV AC-DC power supply application with the TEA1713 PFC and half-bridge resonant controller Rev. 01 — 16 April 2010 User manual Document information Info Content Keywords TEA1713, half bridge, PFC controller, LLC resonant, high efficiency, zero voltage switching, resonant frequency, leakage inductance. Abstract The TEA1713 includes a PFC controller as well as a controller for a half bridge resonant converter. This user manual describes a 250 W resonant switching mode power supply for a typical LCD TV design based on the TEA1713. The board provides 3 output voltages of 24 V / 8 A, 12 V / 4 A and a standby supply of 5 V / 2 A. Good cross regulation is achieved without using a compensation circuit. It is also possible to test the Burst mode of the TEA1713. This feature is normally used in single-output resonant converters but can also be tested with this demo board by making some circuit adjustments. In Burst mode, the no load input power is around 600 mW (490 mW when the 5 V STB supply is disconnected from the PFC bus voltage) at high mains voltage. Typical efficiency at high output power is above 90 % for universal mains input with Schottky rectifiers. UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard Revision history Rev Date Description 01 20100416 First issue Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 2 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 1. Introduction The TEA1713 integrates a Power Factor Corrector (PFC) controller and a controller for a Half-Bridge resonant Converter (HBC) in a multi-chip IC. The TEA1713 250 W resonant demo board has multiple outputs so it can be used as a typical LCD TV power supply. Other target applications include plasma TV, PC power and power adapters (only a single output would be needed for an adapter). The TEA1713 Burst mode feature makes it possible to increase efficiency in the low- to mid-power range. The demo board contains three sub-circuits: • A PFC control stage (integrated into the TEA1713) • A HBC control stage (integrated into the TEA1713) • An additional standby supply (TEA1522) Three regulated outputs are provided: • 24 V / 8 A • 12 V / 4 A • 5 V / 2 A for Normal mode or 5 V / 1.5 A for Standby mode The demo board features a number of protection functions including OverVoltage Protection (OVP), OverCurrent Protection (OCP), Short Circuit Protection (SCP) and mains UnderVoltage Protection (UVP). See the TEA1713 data sheet and the TEA1713 application note for further details. COMPPFC 1 24 SNSBOOST SNSMAINS 2 23 RCPROT SNSAUXPFC 3 22 SSHBC/EN SNSCURPFC 4 21 SNSFB SNSOUT 5 20 RFMAX SUPIC 6 GATEPFC 7 PGND 8 17 SNSCURHBC SUPREG 9 16 n.c. GATELS 10 15 HB TEA1713T 19 CFMIN 18 SGND 14 SUPHS n.c. 11 13 GATEHS SUPHV 12 014aaa826 Fig 1. Pin configuration for SO24 2. Setup 2.1 Normal operation To enable Normal mode on the demo board: UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 3 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard • Ensure jumper J301 is inserted to disable Burst mode; the board is designed to operate as a multiple-output board (24 V and 12 V, as well as 5 V standby); Burst mode is intended for single output solutions only (e.g. power adapters) • Connect suitable loads at the outputs (24 V and 12 V) • A load may also be connected at the 5 V standby output • Connect the mains supply voltage VAC (90 V to 264 V (AC)) Pressing switch S1 disables the TEA1713 while keeping the 5 V standby supply operating. S1 can also be used to reset the TEA1713 after a latched protection function has been triggered. 2.2 Burst mode operation Burst mode helps to significantly increase the efficiency of the demo board at low output power levels. In the TEA1713, Burst mode is primarily intended to be used with single output power supplies. To enable Burst mode on the demo board: • Remove jumper J301; this enables Burst mode operation for low loads • Connect a suitable load at the 24 V output; leave the 12 V output open; converter operation now approximates that of a single output converter, although the 12 V rail still has some influence on the voltage feedback loop (see resistor R312) • Resistor R361 may need to be fine-tuned in order to set the burst mode thresholds accurately. • To measure the power consumption of the single-output resonant converter in Burst mode, the 5 V standby supply must be physically removed from the bus voltage • Connect the mains supply voltage VAC (90 V to 264 V (AC)) Switch S1 must be off (i.e. released). Otherwise the system will operate in Standby mode. With the output load decreasing, the converter starts bursting at approximately PO < 5 W. When the output load is increasing with the TEA1713 in Burst mode, normal operation resumes at approximately 18 W. UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 001aal723 Fig 2. TEA1713 250 W demo board 3. Measurements Remark: Unless otherwise stated, all measurements were taken with the bandwidth of the oscilloscope set to 20 MHz and with jumper J301 inserted, which disables Burst mode. 3.1 Test facilities • • • • • Digital Oscilloscope: Yokogawa, Model DL1740EL Electronic load: Agilent 6063B (for 5 V and for transient response measurements) Electronic load: Chroma 63103 (2x), Chroma 6312 mainframe (for 12 V and 24 V) Digital power meter: Yokogawa, Model WT210 Test jig: TEA1713 250 W demo board (APBADC026, version C) 3.2 Standby power/no load power consumption The following procedure was followed to measure the input power dissipation under no-load conditions: • Jumper J301 was removed to activate Burst mode • To measure power consumption in Standby mode: – push button S1 was pressed to switch to Standby mode; pressing S1 disables the PFC and the 24 V and 12 V supplies • To measure no-load power consumption (with 5 V + 12 V + 24 V supplies connected): – S1 was released to switch to Normal mode • To measure no-load power consumption (with 12 V + 24 V supplies connected) UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard – the 5 V supply was physically removed by disconnecting the standby circuit from the PFC bus voltage The measurement results are shown in Table 1. Table 1. Standby power measurements STBY button pressed UM10379_1 User manual STBY button released VAC supply STBY voltage Pi Pi (with flyback) Pi (without flyback) 90 V / 50 Hz 5.04 V 370 mW 575 mW 475 mW 115 V / 50 Hz 5.04 V 390 mW 565 mW 465 mW 180 V / 50 Hz 5.04 V 485 mW 565 mW 460 mW 230 V / 50 Hz 5.04 V 555 mW 585 mW 480 mW 264 V / 50 Hz 5.04 V 600 mW 600 mW 490 mW All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 6 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.3 Measuring the start-up behavior 3.3.1 Supply voltage (SUPIC) and soft start voltage (SSHBC/EN) during start-up The voltage on pin SUPIC of the TEA1713 (pin 6) was measured. VSUPIC must reach the start level before the IC will start up. The SSHBC/EN pin indicates the soft start of the half bridge converter. 001aal487 a. No load Fig 3. 001aal488 b. Full load VAC = 90 V; CH1: HB voltage, CH2: SUPIC, CH3: SSHB/EN 001aal489 a. No load Fig 4. 001aal490 b. Full load VAC = 264 V; CH1: HB voltage, CH2: SUPIC, CH3: SSHB/EN UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 7 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.3.2 Output voltage during start-up A second set of measurements shows the output voltage levels (24 V, 12 V and 5 V) during start-up. 001aal491 a. No load Fig 5. 001aal492 b. Full load VAC = 90 V; CH1: SUPIC, CH2: 24 V out, CH3: 12 V out, CH4: 5 V out 001aal494 001aal493 a. No load Fig 6. b. Full load VAC = 264 V; CH1: SUPIC, CH2: 24 V out, CH3: 12 V out, CH4: 5 V out UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.3.3 Resonant current IRES at start-up As soon as VSUPIC reaches the start-level, a short inrush current peak flows followed by a stabilized and controlled resonant current waveform. 001aal496 001aal495 a. No load Fig 7. b. Full load VAC = 90 V; CH1: SUPIC, CH2: VBUS, CH4: IRES 001aal497 a. No load Fig 8. 001aal498 b. Full load VAC = 264 V; CH1: SUPIC, CH2: VBUS, CH4: IRES UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.3.4 IC supply voltages on pins SUPIC, SUPREG and SUPHV A high voltage must be present on pin SUPHV before the demo board can start up. SUPREG becomes operational as soon as SUPIC reaches the start-up voltage (typically 22 V). HBC and PFC operations are enabled when VSUPREG reaches 10.7 V. 001aal500 001aal499 a. No load Fig 9. b. Full load VAC = 90 V; CH1: SUPIC, CH2: SUPREG, CH4: SUPHV 001aal502 001aal501 a. No load b. Full load Fig 10. VAC = 264 V; CH1: SUPIC, CH2: SUPREG, CH4: SUPHV UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.3.5 Protection levels on pins SNSCURHB and SNSOUT during start-up The voltage levels on protection pins SNSCURHB and SNSOUT were measured during start-up. Safe start-up will follow provided a protection function has not been triggered (the TEA1713 will not start up if a protection function is active). The protection function is activated when VRCPROT reaches 4 V. 001aal503 a. No load 001aal504 b. Full load Fig 11. VAC = 90 V; CH1: RCPROT, CH2: SNSCURHB, CH3: SNSOUT, CH4: VBUS 001aal505 a. No load 001aal506 b. Full load Fig 12. VAC = 264 V; CH1: RCPROT, CH2: SNSCURHB, CH3: SNSOUT, CH4: VBUS UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 11 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.4 Efficiency Input and output power were measured at full load from low to high mains voltages. The efficiency was calculated after a 30 minute burn-in at 25 °C room temperature without a fan. Table 2. Efficiency results VAC supply Pi Po Efficiency 90 V / 50 Hz 292.88 W 254.38 W 86.9 % 115 V / 50 Hz 285.23 W 254.2 W 89.1 % 180 V / 50 Hz 280.0 W 254.18 W 90.8 % 230 V / 50 Hz 278.4 W 254.26 W 91.3 % 264 V / 50 Hz 277.6 W 254.34 W 91.6 % With Burst mode enabled, the efficiency for low/medium loads can be increased significantly. The following measurements were taken at 230 V (AC) with all outputs, except the 24 V output, unloaded. Jumper J301 was removed to enable Burst mode. In this example, the system enters Burst mode at approximately 3.5 W output power with the load decreasing. With the load increasing again, the system exits Burst mode at approximately 18 W output power. The burst comparator thresholds can be set individually. 014aab005 100 Burst mode Efficiency (%) 80 60 Normal mode 40 20 0 0 10 20 30 40 50 Po (W) Fig 13. Efficiency measurement for low/medium loads at 230 V (AC) supply UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.5 Transient response The dynamic load response of the 12 V and 24 V outputs was measured. The transient voltage should not show any ringing or oscillation. Test results are given in Table 3. Table 3. Transient response test results Measurement conditions: 0 % to 100 % of full load; 200 ms duty cycle; 1 mA/μs rise/fall time Output voltage Overshoot Undershoot Ringing 12 V 230 mV 250 mV free 24 V 145 mV 165 mV free 001aal507 a. 12 V (0 A to 4 A); 24 V loaded with 8 A 001aal508 b. 24 V (0 A to 8 A); 12 V loaded with 4 A Fig 14. Transient response UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 13 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.6 Output ripple and noise Ripple and noise were measured at full output load, buffered with a 10 μF capacitor in parallel with a high-frequency 0.1 μF capacitor. Table 4. Ripple and noise test results VAC supply VO Load Ripple and noise 90 V to 264 V / 50 Hz 24 V 8A 40 mV (p-p) 12 V 4A 25 mV (p-p) 001aal510 001aal509 a. VAC = 90 V b. VAC = 264 V Fig 15. Ripple and noise; CH1: 24 V out, CH2: 12 V out UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 14 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.7 OverPower Protection (OPP) These measurements were taken to determine the output power level at which the system initiates a soft start. Setup: constant load currents at output 2 (12 V / 4 A) and output 3 (5 V / 2 A); the load current at output 1 (24 V output) is gradually increased to determine the OPP trip point. The protection timer starts (and the TEA1713 increases the switching frequency) once the voltage on pin SNSCURHBC rises above +0.5 V and/or falls below −0.5 V. As soon as VSNSCURHBC falls below +0.5 V again and/or rises above −0.5 V, the protection timer stops. Thus the maximum primary current remains constant (at the OPP level) whereas the output voltage decreases with frequency. Table 5. Test results for VAC = 90 V and nominal output power of 254 W I (output 1) V (output 1) I (output 2) V (output 2) Power output Rating (total) 9.25 A 24 V 4A 12 V 280 W 110.2 % 9.52 A 23.7 V 4A 11.7 V 282.4 W 111.2 % 10 A 22.4 V 4A 11.4 V 279.6 W 110.1 % 10.5 A 21.5 V 4A 10.6 V 278.15 W 109.5 % If increasing the frequency fails to restrict VSNSCURHBC to between +0.5 V and −0.5 V, the protection timer will continue counting until eventually triggering a safe system restart. The measurements show that, when the load increases to around 315 W, the system tries continuously to restart (for VAC = 115 V, 180 V, 230 V and 264 V). This corresponds to a power rating of 126 %. See Figure 16 001aal512 001aal511 a. CH1: SUPIC, CH2: SNSCURHB, CH3: RCPROT, CH4: SNSOUT b. CH1: SUPIC, CH2: 24 V out, CH3: RCPROT, CH4: SNSOUT Fig 16. Overpower protection UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 15 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard From Figure 16 a, we can see that OPP is triggered initially when VRCPROT reaches 4 V for the first time (because VSNSCURHB fails to fall below +0.5 V and/or rise above −0.5 V even though the controller increased the switching frequency in an attempt to limit the voltage swing to between +0.5 V and −0.5 V). As soon as VRCPROT reaches the protection threshold of 4 V, the IC initiates a soft start. The second and third times RCPROT is activated is caused by heavy load condition (see CH2 in Figure 16 b). The voltage at the SNSOUT pin was unable to rise above its UVLO range. The fourth time, RCPROT is triggered by UVLO on the SUPIC pin. Due to the low output voltage, the auxiliary winding could not deliver sufficient energy to the SUPIC pin. The UVLO on SUPIC forces the converter to restart even though RCPROT has not reached 4 V. Figure 16 a and b illustrate clearly how OPP can be triggered by a number of protection mechanisms. In this example it is triggered by SNSCURHB and SNSOUT, as well as by SUPIC. 3.8 Hold-up time The output was set to full load and the AC supply voltage disconnected. The hold-up time that passes before the output voltage falls below 90 % of its initial value was then measured. Table 6. Hold-up time test results VAC supply Hold-up time 24 V to 21.6 V Hold-up time 12 V to 10.8 V Hold-up time 5 V to 4.5 V 90 V / 50 Hz 20 ms 22 ms 500 ms 115 V / 50 Hz 22 ms 23 ms 500 ms 230 V / 50 Hz 23 ms 24 ms 500 ms 264 V / 50 Hz 23 ms 24 ms 500 ms 001aal513 a. 10 ms/div 001aal514 b. 100 ms/div Fig 17. Hold-up time; VAC = 230 V, CH1: 24 V out, CH2: 12 V out, CH3: 5 V out, CH4: Imains UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 16 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.9 Short Circuit Protection (SCP) If the power supply outputs are shorted under no load or full load conditions, a safe system restart will be initiated. 001aal515 a. VAC = 90 V Fig 18. 001aal516 b. VAC = 264 V CH1: SUPIC, CH2: GATEPFC, CH3: RCPROT, CH4: SNSOUT From Figure 18 a, we can see that SCP is triggered initially when VRCPROT reaches 4 V for the first time because VSNSCURHB fails to fall below ± 0.5 V, even though the controller increased the switching frequency in an attempt to lower this voltage. Subsequently, SCP is triggered by heavy load condition. Since the 24 V rail is shorted, the voltage across the auxiliary winding also falls. The second peak of VRCPROT is below 4 V (it initiates a soft restart at 4 V) when SUPIC reaches its UVLO threshold. The third and fourth peaks of VSNSCURHB reach 4 V due to UVLO on pin SNSOUT or on pin SUPIC. SCP mechanisms are basically the same as OPP mechanisms. UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 17 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 3.10 Resonant current measurement The gate drive signals and resonant current at no load and at full load were measured. The converter operates in Zero Voltage Switching (ZVS) mode. 001aal517 001aal518 a. No load Fig 19. b. Full load Resonant current test results; CH1: GATELS, CH4: IRES 3.11 Cross regulation Voltage regulation can be measured at 24 V / 8 A and 12 V / 0 A or at 24 V / 0 A and 12 V / 4 A, with J301 inserted to inhibit possible Burst mode intervention. Table 7. Cross regulation test results Load conditions UM10379_1 User manual 24 V 12 V Measure Regulation Measure Regulation 24 V / 8 A 12 V / 0 A 24.31 V 1.3 % 12.61 V 5.1 % 24 V / 0 A 12 V / 4 A 25.0 V 4.2 % 11.63 V 3.1 % All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 18 of 32 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors UM10379_1 User manual 4. Board properties 4.1 Circuit diagram VBUS R356 51 Ω R355 10 Ω D355 1N4148 Q301 12N50C3 C301 220 pF R357 100 kΩ D351 1N4148 GATEHS D312 1N4007 10 SUPHS Rev. 01 — 16 April 2010 C312 330 nF HB n.c. R301 1 kΩ SNSCURHB SGND CFMIN C305 330 pF RFMAX R303 27 kΩ SNSFB C311 n.m. EN SSHBC/EN C326 3.3 μF RCPROT GATELS R351 10 Ω C302 220 pF T1 LP3925 14 R353 100 kΩ 15 9 SUPREG 6 18 TEA1713 R117 0Ω C306 680 nF C304 220 μF 20 5 C321 10 nF R365 270 kΩ R366 39 kΩ 21 C315 1 mF C316 1 mF C317 1 mF L302 0.9 μH D306 SBL2040CT 12 V 4 A R123 75 Ω C319 1000 μF D304 SBL2060CT C320 1000 μF AUX winding added by hand D356 1N4148 SNSOUT C314 1 mF D305 SBL2040CT C310 47 nF D366 1N4148 C307 10 μF 19 C318 2.7 nF R310 7.5 Ω SUPIC SUPIC 24 V 8 A C313 1 mF SNSCURHB C300 4.7 μF 17 L301 0.9 μH D303 SBL2060CT C309 1 nF SUPREG C308 680 nF 16 C365 390 nF SUPREG SUPREG 22 R362 33 kΩ Q307 BC847-40 23 R363 100 kΩ IC101 R302 150 kΩ Q302 12N50C3 R352 51 Ω C322 2 μF IC102A LM393 R360 33 kΩ 1 8 2 4 3 C362 3.3 nF R368 0Ω R315 470 Ω R364 n.m. R367 2.2 kΩ R317 68 Ω IC302 SFH615 6 5 C324 n.m. C323 47 nF SUPREG IC102B LM393 7 C360 150 nF R380 n.m. R361 65 kΩ C361 10 nF R312 36 kΩ R314 10 kΩ R323 2.7 kΩ J301 C325 2.2 nF Remove J301 to enable burst mode R369 12 kΩ R371 0Ω PGND R313 910 Ω R318 82 Ω 19 of 32 © NXP B.V. 2010. All rights reserved. 014aab003 Fig 20. Half bridge resonant converter stage UM10379 SGND R370 IC303 0Ω TL431 n.m. TEA1713 250 W resonant demoboard All information provided in this document is subject to legal disclaimers. SUPREG SNSCURHB 11 13 n.c. xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx C102 2.2 nF L101 C103 0.22 μF G C101 2.2 nF BD101 GBU806 R122 1 MΩ L102 C111 0.22 μF L104 220 μH C112 1 μF N C114 1 μF R103 5.1 kΩ R101 1 MΩ SNSAUXPFC 12 3 7 R109 3.6 kΩ SUPHV R119 0Ω GATEPFC R111 10 Ω Q201 5350T R116 560 kΩ SNSMAINS 2 TEA1713 4 C113 3.3 μF R104 47 kΩ PGND Rev. 01 — 16 April 2010 C106 470 nF COMPPFC SNSCURPFC PBSS R208 100 Ω 1 24 R201 470 kΩ SUPIC C201 2.2 nF R118 n.c. D202 1N4148 R114 56 kΩ SNSBOOST R120 2.2 kΩ C109 10 nF D204 48CTQ060 D201 1N4007 C210 470 μF C209 470 μF R203 4.7 Ω C211 470 μF +5V R320 91 Ω C202 22 μF VCC T201 VCC GND 1 8 2 7 REG 3 4 6 5 VCC IC304 SFH610 n.c. SOURCE R217 1Ω AUX R204 75 kΩ IC202 SFH615 R216 n.c. R218 10 kΩ C213 47 nF R213 5.1 kΩ R300 0Ω D320 nc D321 nc C212 22 nF IC201 C401 3.3 nF IC203 TL431 R219 10 kΩ 014aab004 Fig 21. PFC stage (top circuit) and stand-by supply (bottom circuit) UM10379 20 of 32 © NXP B.V. 2010. All rights reserved. C206 10 nF S1 STBY EN R215 1.5 kΩ DRAIN TEA1522 RC R206 5.1 kΩ R2 0.1 Ω 1W 5V 2A VBUS C215 220 pF R113 4.7 MΩ L201 0.9 μH R200 0Ω R237 12 kΩ R112 4.7 MΩ R107 12 kΩ C107 R1 47 nF 0.1 Ω 1W IC101 (PART) C208 1.5 nF Q101 K3934 R110 100 kΩ R115 2.2 kΩ 8 C105 150 nF C110 220 μF 420 V TEA1713 250 W resonant demoboard All information provided in this document is subject to legal disclaimers. R108 33 kΩ ZD201 30 V VBUS VBUS R121 1 MΩ CN101 D102 BYV29X-600 D101 1N5408 L103 L ≅ 220 μH NXP Semiconductors UM10379_1 User manual R102 1 MΩ FUSE F101 L UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 4.2 PCB layout 014aab006 Fig 22. PCB layout of TEA1713 250 W demo board 4.3 Bill of Materials Table 8. Bill of material Part PFC BD101 UM10379_1 User manual Bridge diode, flat/mini, GBU806 8 A, 600 V (Lite-On) C101 Ceramic disc capacitor, Y2-type, 9 ϕ, KX 2200 pF, 250 V (AC) (Murata): C102 Ceramic disc capacitor, Y2-type, 9 ϕ, KX 2200 pF, 250 V (AC) (Murata): C103 MPX, X-Cap 0.22 μF, 275 V (AC) C105 MLCC, SMD 0805, X7R 150 nF, 50 V C106 MLCC, SMD 0805, X7R 470 nF, 50 V C107 MLCC, SMD 0805, X7R 47 nF, 50 V C109 MLCC, SMD 0805, X7R 10 nF, 50 V C110 E/C, Radial Lead, 85°C, 220 μF, 420 V All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 21 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard Table 8. Bill of material …continued Part C111 MPX, X-Cap 0.22 μF, 275 V (AC) C112 MPP Cap. Radial Lead 1 μF, 450 V C113 MLCC, SMD 0805, 3300 nF, 25 V C114 MPP Cap. Radial lead 1 μF, 450 V D101 General purpose diode, 1N5408 3 A, 1 KV D102 BYV29X-600 TO220 F-pack F101 Fuse, / PTU 6.3 A, 250 V IC101 TEA1713 SO24 (NXP) L101 EMI Choke, Ring core, 18 mm, / 2.0 mH (Sendpower) L102 EMI Choke, FOTC2508000900A, 9.0 mH (Yu Jing International) L103 PFC Choke, QP-3325 220 μH with auxiliary winding (Yu Jing International) L104 Power Choke 220 μH (Yu Jing International) Q101 MOSFET K3934 TO220 F-pack Q201 PNP PBSS5350T R1 Resistor, axial lead, 1 W, small size 0.1 Ω, 5 % R2 Resistor, axial lead, 1 W, small size 0.1 Ω, 5 % R101 Resistor, SMD 1206 thin film chip 1 MΩ, 5 % R102 Resistor, SMD 1206 thin film chip 1 MΩ, 5 % R103 Resistor, SMD 0805 thin film chip 5.1 kΩ, 5 % R104 Resistor, SMD 0805 thin film chip 47 kΩ, 5 % R107 Resistor, SMD 0805 thin film chip 12 kΩ, 5 % R108 Resistor, SMD 0805 thin film chip 33 kΩ, 5 % R109 Resistor, SMD 0805 thin film chip 3.6 kΩ, 5 % R110 Resistor, SMD 0805 thin film chip 100 kΩ, 5 % R111 Resistor, SMD 1206 thin film chip 10 Ω, 5 % R112 Resistor, SMD 1206 thin film chip 4.7 MΩ, 5 % R113 Resistor, SMD 1206 thin film chip 4.7 MΩ, 5 % R114 Resistor, SMD 0805 thin film chip 56 kΩ, 1 % R115 Resistor, SMD 0805 thin film chip 2.2 kΩ, 5 % R116 Resistor, SMD 0805 thin film chip 560 kΩ, 5 % R119 Resistor, SMD 0805 thin film chip 0 Ω, 5 % R120 Resistor, SMD 0805 thin film chip 2.2 kΩ, 5 % R121 Resistor, SMD 1206 thin film chip 1 MΩ, 5 % R122 Resistor, SMD 1206 thin film chip 1 MΩ, 5 % Resonant LLC converter stage UM10379_1 User manual C300 E/C, Radial Lead, 4.7 μF / 16 V C301 Ceramic capacitor, Disc, 5ϕ 220 pF, 1 kV C302 Ceramic capacitor, Disc, 5ϕ 220 pF, 1 kV C304 E/C, Radial Lead, 7.5 mm × 12 mm, 220 μF / 35 V C305 MLCC, SMD 0805, X7R 330 pF, 50 V C306 MLCC, SMD 0805, X7R 680 nF, 50 V All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 22 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard Table 8. Bill of material …continued Part UM10379_1 User manual C307 E/C, radial lead, 7.5 mm × 12 mm, 10 μF / 35 V C308 MLCC, SMD 0805, X7R 680 nF, 50 V C309 Ceramic disc capacitor, 5ϕ 1000 pF, 1 KV C310 MPP radial lead capacitor, high current 47 nF, 800 V or 1000 V C311 n.m. (not mounted) C312 MLCC, SMD 0805, X7R 330 nF, 50 V C313 E/C radial lead capacitor, 12.5 mm × 20 mm, 1000 μF / 35 V C314 E/C radial lead capacitor, 12.5 mm × 20 mm, 1000 μF / 35 V C315 E/C radial lead capacitor, 12.5 mm × 20 mm, 1000 μF / 35 V C316 E/C radial lead capacitor, 12.5 mm × 20 mm, 1000 μF / 35 V C317 E/C radial lead capacitor, 12.5 mm × 20 mm, 1000 μF / 35 V C318 MLCC, SMD 0805, X7R 2.7 nF, 50 V C319 E/C radial lead capacitor, 10 mm × 15 mm, 1000 μF / 16 V C320 E/C radial lead capacitor, 10 mm × 15 mm, 1000 μF / 16 V C321 MLCC, SMD 0805, X7R 10 nF, 50 V C322 MLCC, SMD 0805, 2.2 μF, 16 V C323 MLCC, SMD 0805, X7R 47 nF, 50 V C324 n.m. (not mounted) C325 MLCC, SMD 0805, X7R 2.2 nF, 50 V C326 MLCC, SMD 0805, 3.3 μF, 16 V C360 MLCC, SMD 0805, X7R 150 nF, 50 V C361 MLCC, SMD 0805, X7R 10 nF, 50 V C362 MLCC, SMD 0805, X7R 3.3 nF, 50 V C365 MLCC, SMD 0805, X7R 390 nF, 50 V D303 Schottky diode, TO220AB, SBL2060CT, 20 A, 60 V (Lite-On) D304 Schottky diode, TO220AB, SBL2060CT, 20 A, 60 V (Lite-On) D305 Schottky diode, TO220AB, SBL2040CT, 20 A, 40 V (Lite-On) D306 Schottky diode, TO220AB, SBL2040CT, 20 A, 40 V (Lite-On) D312 General purpose diode, 1N4007 1 A, 1 KV or alternatively fast recovery diode UF4007 D351 Switching diode, SMD SOD-80, LL4148, 0.2 A, 75 V (NXP) D355 Switching diode, SMD SOD-80, LL4148, 0.2 A, 75 V(NXP) D356 Switching diode, SMD SOD-80, LL4148, 0.2 A, 75 V (NXP) D366 Switching diode, SMD SOD-80, LL4148, 0.2 A, 75 V (NXP) IC102 LM393 SO8 IC302 Optocoupler, SFH615A-1 IC303 Voltage regulator, TO92, TL431 J301 Jumper L301 Power choke; 0.9 μH (Sendpower) core: R4 × 15; wiring: 1.2 mm (diameter) × 6.5 turns L302 Power choke; 0.9 μH (Sendpower) core: R4 × 15; 1.2 mm (diameter) × 6.5 turns All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 23 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard Table 8. Bill of material …continued Part Q301 NMOS SPA12N50C3 TO220 Q302 NMOS SPA12N50C3 TO220 Q307 BC847 R117 Resistor, SMD 0805 thin film chip 0 Ω R123 Resistor, SMD 0805 thin film chip 75 Ω, 5 % R301 Resistor, SMD 0805 thin film chip 1 kΩ, 5 % R302 Resistor, SMD 0805 thin film chip 150 kΩ, 5 % R303 Resistor, SMD 0805 thin film chip 27 kΩ, 5 % R310 Resistor, SMD 0805 thin film chip 7.5 Ω, 5 % R312 Resistor, SMD 0805 thin film chip 36 kΩ, 1 % R313 Resistor, SMD 0805 thin film chip 910 Ω, 1 % R314 Resistor, axial lead 1/4 W 10 kΩ, 1 % R315 Resistor, axial lead 1/4 W 470 Ω, 1 % R317 Resistor, SMD 0805 thin film chip 68 Ω, 5 % R318 Resistor, SMD 0805 thin film chip 82 Ω, 5 % R323 Resistor, SMD 0805 thin film chip 2.7 kΩ, 5 % R351 Resistor, SMD 0805 thin film chip 10 Ω, 5 % R352 Resistor, SMD 0805 thin film chip 51 Ω, 5 % R353 Resistor, SMD 0805 thin film chip 100 kΩ, 5 % R355 Resistor, SMD 0805 thin film chip 10 Ω, 5 % R356 Resistor, SMD 0805 thin film chip 51 Ω, 5 % R357 Resistor, SMD 0805 thin film chip 100 k Ω, 5 % R360 Resistor, SMD 1206 thin film chip 33 kΩ, 1 % R361 Resistor, SMD 0805 thin film chip 65 kΩ, 1 %; if burst problems: check similar values (e.g. values between 56 kΩ and 68 kΩ) R362 Resistor, SMD 1206 thin film chip 33 kΩ, 5 % R363 Resistor, SMD 1206 thin film chip 100 kΩ, 5 % R364 n.m. (not mounted) R365 Resistor, SMD 0805 thin film chip 270 kΩ, 5 % R366 Resistor, SMD 0805 thin film chip 39 kΩ, 5 % R367 Resistor, SMD 0805 thin film chip 2.2 kΩ, 5 % R368 Resistor, SMD 0805 thin film chip 0 Ω, 5 % R369 Resistor, SMD 0805 thin film chip 12 kΩ, 5 % R370 n.m. (not mounted) R371 Resistor, SMD 0805 thin film chip 0 Ω, 5 % R380 n.m. (not mounted) T1 Transformer, LP3925, Lk = 110 μH, L = 660 μH (Yu Jing International) add 4 auxiliary windings Flyback stage UM10379_1 User manual C201 Ceramic disc capacitor, 5ϕ 2200 pF, 1 kV C202 E/C radial lead capacitor, 105 °C, 6.3 mm × 11 mm, LZP 22 μF, 50 V (LTEC) All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 24 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard Table 8. Bill of material …continued Part UM10379_1 User manual C206 MLCC, SMD 0805, X7R 10 nF, 50 V C208 MLCC, SMD 0805, X7R 1.5 nF, 50 V C209 E/C radial lead capacitor,105 °C, 5 mm × 12 mm, LZP 470 μF, 16 V (LTEC) C210 E/C radial lead capacitor, 5 mm × 12 mm, LZP 470 μF, 16 V (LTEC) C211 E/C radial lead capacitor, 105°C, 5 mm × 12 mm, LZP 470 μF, 16 V (LTEC) C212 MLCC, SMD 0805, X7R 22 nF, 50 V C213 MLCC, SMD 0805, X7R 47 nF, 50 V C215 MLCC, SMD 0805, X7R 220 pF, 50 V C401 Ceramic, Y1-Cap, Disc 9ϕ, KX 3300 pF, 250 V (AC) (Murata) D201 General purpose diode, 1N4007 1 A, 1 KV D202 Switching diode, DIP, 1N4148, 0.2 A, 75 V (NXP) D204 Schottky diode, TO220AB, SBL1040CT, 10 A, 40 V (Lite-On) D320 n.m. (not mounted) D321 n.m. (not mounted) IC201 SMPS controller IC, SO8, TEA1522P (NXP) IC202 Optocoupler, SFH615A-1 IC203 Voltage regulator, TO92, TL431 IC304 Optocoupler, SFH610A-1 L201 Power choke; 0.9 μH (Sendpower) core: R4 × 15; wiring: 1.2 mm (diameter) × 6.5 turns R118 n.m. (not mounted) R200 Resistor, SMD 1206 thin film chip 0 Ω, R201 Resistor, axial lead, CF 1/4 W, small size 470 kΩ, 5 % R203 Resistor, SMD 0805 thin film chip 4.7 Ω, 5 % R204 Resistor, axial lead 1/4 W 75 kΩ, 5 % R206 Resistor, SMD 0805 thin film chip 5.1 kΩ, 5 % R208 Resistor, SMD 0805 thin film chip 100 Ω, 5 % R213 Resistor, SMD 0805 thin film chip 5.1 kΩ, 5 % R215 Resistor, SMD 0805 thin film chip 1.5 kΩ, 5 % R216 n.m. (not mounted) R217 Resistor, axial lead 1/4W 1 Ω, 5 % R218 Resistor, SMD 0805 thin film chip 10 kΩ, 1 % R219 Resistor, SMD 0805 thin film chip 10 kΩ, 1 % R237 Resistor, SMD 0805 thin film chip 12 kΩ, 5 % R300 Resistor, SMD 0805 thin film chip 0 Ω, 5 % R320 Resistor, SMD 0805 thin film chip 91 Ω, 5 % S1 Switch, small signal, 6 pin T201 Transformer, EF20 PC40 2.1 mH (TDK) ZD201 Zener diode, SMD BZX84-C30, 30 V (NXP) All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 25 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 5. Appendix 1 - Resonant transformer data 5.1 LP3925 outline B A B C C 1.0 Ø 1.3 Ø A: 40 mm B: 48 mm C: 25 mm N: 8 pin P: 41mm Ae: 170 mm2 3 1 2 3 4 5 5 N Dimensions in mm P 014aab007 Fig 23. LP3925 dimensions 5.2 Winding order LP-3925 16 15 24 V N5 N1 = 34 turns (15 strands x 0.2 mm) N1 3 14 4 13 12 11 12 V N3 GND GND N4 12 V N6 24 V 1 7 N5 = 2 turns (60 strands x 0.2) N6 = 2 turns (60 strands x 0.2 mm) N,AUX = 4 turns 10 9 N3 = 2 turns (80 strands x 0.2 mm) N4 = 2 turns (80 strands x 0.2 mm) L( N1) = 600 μH (all secondaries open) Lk (N1) = 110 μH (all secondaries shorted) N,AUX GND 014aab008 Fig 24. LP3925 winding order UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 26 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 6. Appendix 2 - PFC transformer data 6.1 QP-3325 outline A C B P2 A: B: C: P1: P2: P1 8 1 7 2 37 mm (max) 26 mm (max) 34.5 mm (max) 24 ±0.5 mm 30 ±0.5 mm BOTTOM VIEW P1 P2 C67 Ae: C23 200 mm2 3 6 5 4 014aab009 Fig 25. QP-3325 dimensions 6.2 Winding order QP-3325 1,2 7,8 N1 N2 6,5 3,4 Lp (N1) = 220 μH (for N2 Open) N1 = 50 Ts (70 strands x 0.1 mm) N2 = 3.5 Ts (1 strand x 0.3 mm) 014aab010 Fig 26. QP-3325 winding order UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 27 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 7. Appendix 3 - Coil L104 data 7.1 Core An iron powder toroid core should be used for the inductor core. The core must meet the electrical specifications defined for the T80-52 package. The following cores can be used: MICROMETALS: AL = 42 ±10 % nH/N2; Part No. T80-52 CURIE AL = 42 ±10 % nH/N2; Part No. 80-75H CORTEC AL = 42 ±10 % nH/N2; Part No. CA80-52 7.2 Winding The winding must consist of 82 turns of 1.0 Ø × 1 magnetic wire evenly distributed on three toroid layers. The inductance of the coil is 220 μH. 28.0 (max) 14.0 (max) Vendor colour code 26.0 (max) 3.0 1.00 1.0 (max) Tin-plated 8.0 8.0 6.0 Dimensions in mm 16.0 014aab011 Fig 27. L104 dimensions UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 28 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 8. Appendix 4 - Standby transformer data 8.1 EF20 transformer with TDK PC40 core S5 3 N5 N4 S4 6 B N3 N2 A N4 5 N1 S3 2 N3 S2 1 N5 N2 T S1 N1 Bobbin 014aab012 Fig 28. Winding order 8.2 Winding specifications Table 9. Layer Winding specifications Winding Wire Turns Winding Method Tape insulation No. Turns Width Start Finish N1 2 A 0.25 Ø × 1 40 center S1 2 13 mm N2 6 5 0.35 Ø × 4 (3L) 5 center S2 2 13 mm N3 A B 0.25 Ø × 1 40 center S3 1 13 mm N4 B 3 0.25 Ø × 1 40 center S4 2 13 mm N5 1 1 0.3 Ø × 1 20 side S5 3 13 mm 8.3 Electrical characteristics Table 10. Electrical characteristics Item Pin Specification Condition Inductance 2 to 3 2.1 mH ±5% 80 kHz, 1 V Leakage inductance 2 to 3 <100 μH 2nd all short 8.4 Core and bobbin Core: EF-20 (TDK PC40 or equivalent) Bobbin: EF-20 (6-pin vertical type, Chang Chun Plastics Co. Ltd) Ae: 32.1 mm2 UM10379_1 User manual All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 29 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 8.5 Outline D A B C 3 3 1 4 E F H 1 G 6 3 I 6 4 APBADC014 1 4 3 Dimensions in mm 014aab013 Fig 29. EF-20 dimensions Table 11. A B C D E Spec 22.0 23.0 3.5 15.0 Tolerance MAX MAX MIN MAX [1] UM10379_1 User manual Dimensions F G H I SQ0.64 25.0 10.0 5 10.0 ±0.5 ±2.0 ±0.5 ±0.5 ±2.0 Pin 4 is removed completely in this application. All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 30 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 9. Legal information 9.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 9.2 Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UM10379_1 User manual Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 01 — 16 April 2010 © NXP B.V. 2010. All rights reserved. 31 of 32 UM10379 NXP Semiconductors TEA1713 250 W resonant demoboard 10. Contents 1 2 2.1 2.2 3 3.1 3.2 3.3 3.3.1 3.3.2 3.3.3 3.3.4 3.3.5 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 4 4.1 4.2 4.3 5 5.1 5.2 6 6.1 6.2 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 9 9.1 9.2 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Normal operation . . . . . . . . . . . . . . . . . . . . . . . 3 Burst mode operation . . . . . . . . . . . . . . . . . . . . 4 Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test facilities . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Standby power/no load power consumption . . . 5 Measuring the start-up behavior . . . . . . . . . . . . 7 Supply voltage (SUPIC) and soft start voltage (SSHBC/EN) during start-up. . . . . . . . . . . . . . . 7 Output voltage during start-up . . . . . . . . . . . . . 8 Resonant current IRES at start-up . . . . . . . . . . . 9 IC supply voltages on pins SUPIC, SUPREG and SUPHV . . . . . . . . . . . . . . . . . . 10 Protection levels on pins SNSCURHB and SNSOUT during start-up. . . . . . . . . . . . . . . . . 11 Efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Transient response . . . . . . . . . . . . . . . . . . . . . 13 Output ripple and noise . . . . . . . . . . . . . . . . . 14 OverPower Protection (OPP) . . . . . . . . . . . . . 15 Hold-up time . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Short Circuit Protection (SCP) . . . . . . . . . . . . 17 Resonant current measurement . . . . . . . . . . . 18 Cross regulation . . . . . . . . . . . . . . . . . . . . . . . 18 Board properties . . . . . . . . . . . . . . . . . . . . . . . 19 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . 19 PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . 21 Appendix 1 - Resonant transformer data . . . 26 LP3925 outline . . . . . . . . . . . . . . . . . . . . . . . . 26 Winding order . . . . . . . . . . . . . . . . . . . . . . . . . 26 Appendix 2 - PFC transformer data . . . . . . . . 27 QP-3325 outline . . . . . . . . . . . . . . . . . . . . . . . 27 Winding order . . . . . . . . . . . . . . . . . . . . . . . . . 27 Appendix 3 - Coil L104 data . . . . . . . . . . . . . . 28 Core . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Winding. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Appendix 4 - Standby transformer data. . . . . 29 EF20 transformer with TDK PC40 core . . . . . 29 Winding specifications . . . . . . . . . . . . . . . . . . 29 Electrical characteristics . . . . . . . . . . . . . . . . . 29 Core and bobbin . . . . . . . . . . . . . . . . . . . . . . . 29 Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Legal information. . . . . . . . . . . . . . . . . . . . . . . 31 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 9.3 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 April 2010 Document identifier: UM10379_1