UM8516 - Union Semiconductor

UM8516
20V P-Channel Power MOSFET
UM8516 SOT23-6
General Description
The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have
extremely low on-resistance. This benefit provides the designer with an extremely efficient device
for use in battery and load management applications. The devices use a space-saving,
small-outline SOT23-6 package.
Applications
Features





Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones

Pin Configurations
Drain-Source Voltage(Max): -20V
Low On-Resistance:
65mΩ@VGS=-4.5V
75mΩ@VGS=-2.5V
Continuous Drain Current(Max): -4A@25℃
Top View
D1
6D
D2
5D
G3
4S
XX: Week Code
UM8516
SOT23-6
Ordering Information
Part Number
Packaging Type
Marking Code
UM8516
SOT23-6
UCN
Shipping Qty
3000pcs/7 Inch
Tape & Reel
Absolute Maximum Ratings
Symbol
VDSS
VGS
ID
IDM
PD
TJ
Tstg
RθJA
Parameter
Drain-Source voltage
Gate-Source voltage
Continuous Drain Current
Drain Current Pulsed
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Value
-20
±8
-4.0
-20
0.7
-55~150
-55~150
100
Units
V
V
A
A
W
℃
℃
℃/W
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UM8516
Electrical Characteristics
(TJ=25℃, unless otherwise noted)
Symbol
Parameter
Off Characteristics
Drain to Source
BVDSS
Breakdown
Voltage
Zero Gate Voltage
IDSS
Drain Current
Gate-to-Source
IGSS
Leakage Current
On Characteristics
Static
RDS(ON)
Drain-to-Source
On-Resistance
Gate Threshold
VGS(TH)
Voltage
Forward
gfs
Transconductance
Test Condition
Min
VGS=0V, ID=-250μA
-20
Typ
Max
Unit
V
VDS=-20V, VGS=0V
-1
μA
VGS=±6V, VDS=0V
±10
μA
VGS=-4.5V, ID=-4.0A
52
65
VGS=-2.5V, ID=-4.0A
60
75
-0.6
-1
VDS= VGS , ID=-250μA
VDS=-10V, ID=-2.7A
-0.4
9
mΩ
V
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Switching Characteristics
Threshold Gate
Qg(TH)
Charge
Gate-Source
Qgs
Charge
Qgd
Gate-Drain Charge
td(on)
tr
Turn-on Delay
Time
Rise Time
td(off)
Turn-off Delay
Time
tf
Fall Time
990
VGS=0V, VDS=-15V,
f=1.0MHz
92
pF
15
10.8
VDS=-10V, VGS=-4.5V,
ID=-4.2A
nC
2.46
2.41
48
VGS=-4.5V, VDS=-10V,
ID=-1A
RL=10Ω, RG=2.8Ω
Drain-Source Diode Characteristics and Maximum Ratings
Forward Diode
VSD
VGS=0V, IS=-1A
Voltage
95
ns
680
250
-0.7
-1.4
V
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UM8516
Typical Characteristics (TJ=25℃, unless otherwise noted)
Fig1. Typical Output Characteristics
Fig2. Typical Transfer Characteristics
Fig3. On-Resistance vs. Gate-to-Source Voltage
Fig4. On-Resistance vs. Drain Current
Fig5. On-Resistance vs. Junction Temperature
Fig6. IDS vs. Drain-to-Source Voltage
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UM8516
Package Information
UM8516 SOT23-6
Outline Drawing
D
5
4
1
2
3
L
L1
E
E1
6
Symbol
θ
b
e
c
20
e1
Top View
A
A2
A1
End View
Side View
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
DIMENSIONS
MILLIMETERS
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950REF
1.800
2.000
0.600REF
0.300
0.600
0°
8°
INCHES
Min
Max
0.041 0.049
0.000 0.004
0.041 0.045
0.012 0.020
0.004 0.008
0.111 0.119
0.059 0.067
0.104 0.116
0.037REF
0.071 0.079
0.023REF
0.012 0.024
0°
8°
Land Pattern
2.4
0.9
0.7
0.95
0.95
NOTES:
1. Compound dimension: 2.92×1.60;
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
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UM8516
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be
accurate. Nonetheless, this document is subject to change without notice. Union assumes
no responsibility for any inaccuracies that may be contained in this document, and makes
no commitment to update or to keep current the contained information, or to notify a
person or organization of any update. Union reserves the right to make changes, at any
time, in order to improve reliability, function or design and to attempt to supply the best
product possible.
Union Semiconductor, Inc
Add: Unit 606, No.570 Shengxia Road, Shanghai 201210
Tel: 021-51093966
Fax: 021-51026018
Website: www.union-ic.com
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